"Fei Teng,Masaki Kuzumoto,Makoto Hagiwara,Yuuki Ishii,Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Takushi Jimichi","6.5kV耐圧SiC-MOSFETのデバイスモデル開発","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,"  SPC-19-068",2019,Oct.
"Fei Teng,Masaki Kuzumoto,Makoto Hagiwara,Yuuki Ishii,Junichi Nakashima,Yasushige Mukunoki,Takeshi Horiguchi","6.5kV耐圧SiC-MOSFETの出力特性モデリング","平成31年電気学会全国大会",,,,"  4-013","pp. 20-21",2019,Mar.