"Toru Kanazawa,Hisashi Saito,Kazuya Wakabayashi,Ryousuke Terao,Tomonori Tajima,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N<sup>+</sup>-InGaAs Source Region","2009 International Conference on Solid State Devices and Materials",,,,,"pp. 246-247",2009,Oct.
"K. Wakabayashi,T. Kanazawa,H. Saito,R. Terao,S. Ikeda,Y. Miyamoto,K. Furuya","InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure","Int. Symposium on Silicon Nano Devices in 2030",,,,,,2009,Oct.
"Kazuya Wakabayashi,Toru Kanazawa,Hisashi Saito,Tomonori Tajima,Ryosuke Terao,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","I-V characteristics of undoped channel InP/InGaAs MOSFET with regrown source region","The 70th Autumn Meeting, 2008; The Japan Society of Applied Physics",,,,,"pp. 1299",2009,Sept.
"Toru Kanazawa,Hisashi Saito,kazuya wakabayashi,Tomonori Tajima,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","High mobility III-V MOSFET with n<sup>+</sup>-source regrown by MOSFET","電気学会 電子・情報・システム部門大会",,,,,,2009,Sept.
"kazuya wakabayashi,Toru Kanazawa,Hisashi Saito,Tomonori Tajima,Ryousuke Terao,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性","第70回応用物理学会学術講演会",,,,,,2009,Sept.
"YASUYUKI MIYAMOTO,Toru Kanazawa,Hisashi Saito,KAZUHITO FURUYA","InGaAs/InP MISFET with epitaxially grown source","2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices（AWAD）",,,,,,2009,June
"Toru Kanazawa,KAZUHITO FURUYA,YASUYUKI MIYAMOTO,Hisashi Saito,kazuya wakabayashi,Tomonori Tajima","InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source","IEEE 21th Conference on Indium Phosphide and Related Materials",,,,,,2009,May
"Hisashi Saito,Toru Kanazawa,Yasuyuki Miyamoto,Kazuhito Furuya","Fabrication of vertical InGaAs-MOSFET with heterostructure launcher and intrinsic channel","Technical Meeting on Electron Devices, IEE Jpn.",,,,,,2009,Mar.
"Toru Kanazawa,KAZUHITO FURUYA,YASUYUKI MIYAMOTO,Hisashi Saito,kazuya wakabayashi,Tomonori Tajima","I-V characteristics of III-V MOSFET with MOVPE regrown source region","The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies",,,,,,2009,Mar.
"YASUYUKI MIYAMOTO,Toru Kanazawa","III-V ナノデバイス","電子情報通信学会2009年全国大会",,,,,,2009,Mar.