"H.Hongo,Y.Miyamoto,M.Gault,K.Furuya","Influence of finite energy width in electron distribution to an experiment of hot electron donble-slit eyperiment",,"J. Appl. Phys.",,"Vol. 82","No. 8","pp. 3846",1997,
"J.M.M.Rios,L.M.Lurardi,S.Chandrasekhar,Y.Miyamoto","A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors(HBTs)",,"IEEE Transaction of Microwave Theory and Technigue",,"Vol. 45","No. 1","pp. 39",1997,
"H.Hongo,Y.Miyamoto,M.Suhara,K.Furuya","A 40nm pitch doble slit experiment of hot electrons in a semiconductor under a magnetic field",,"Applied Physics Letter",,"Vol. 70","No. 1","pp. 93",1997,
"T.Oobo,R.Takemura,M.Suhara,Y.Miyamoto,K.Furuya","High Peak to Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes",,"Jpn.J.Appl.Phys.",,"Vol. 36","No. 8","pp. 5079",1997,
"M.Suhara,C.Nagao,H.Honji,Y.Miyamoto,K.Furuya,R.Takemura","Atomically flat OMVPE growth of GaInAs and InP observed by AFM for level narrowing in resonant tunneling diodes",,"J.Cryst.Growth",,"Vol. 179","No. 1-2","pp. 18",1997,
"YASUYUKI MIYAMOTO","High-temperature estimation of phase coherent length of hot electron using GaInAs/InP triple-barrier resonant tunneling diodes grown by OMVPE",,"Jpn.J.Appl.Phys.",,"Vol. 36","No. 3B","pp. 1846",1997,
"H.Hongo,H.Tanaka,Y.Miyamoto,T.Otake,J.Yoshinaga,K.Furuya","Electrical properties of 100nm pitch Cr/Au fine electrodes with 40nm width on GaInAs toward hot electron interference/diffraction devices",,"Microelectronic Engineering",,"Vol. 35",,"pp. 241",1997,
"H.Hongo,Y.Miyamoto,M.Suhara,K.Furuya","Hot electron interference by 40nm-pitch double slit buried in semiconductor",,"Microelectronic Engineering",,"Vol. 35",,"pp. 337",1997,