"Y.Miyamoto,J.Yoshinaga,H.Toda,T.Arai,H.Hongo,T.Hattori,A.Kokubo,K.Furuya","Sub-micron GaInAs/InP Hot Electron Transistors by EBL process and size dependence of current gain",,"Solid State Electronics",,"Vol. 42","No. 7-8","pp. 1467",1998,
"Y.Miyamoto,A.Yamaguchi,K. Oshima,W.Saitoh,M.Asada","Metal-Insulator-Semiconductor emitter with epitaxial CaF2 layer as insnlator",,"J. Vac. Sci. Technol.",,"Vol. B16","No. 2","pp. 851",1998,
"H.Hongo,Y.Miyamoto,J.Suzuki,M.Suhara,K.Furuya","Wrapped Alignment Mark for fabrication of Interference/Diffraction hot electron devices",,"Jpn. J. Appl.Phys.",,"Vol. 37","No. 3B","pp. 1518",1998,
"A.Kokubo,T.Hattori,H.Hongo,M.Suhara,Y.Miyamoto,K.Furuya","25 nm Pitch GaInAs/InP Buried Structure by Calixarene Resist",,"Jpn. J. Appl. Phys.",,"Vol. 37","No. 7A","pp. L827",1998,
"T.Oobo,R.Takemura,K.Sato,M.Suhara,Y.Miyamoto,K.Furuya","Effect of spacer layer thickness in energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by OMVPE",," Jpn. J. Appl. Phys.",,"Vol. 37","No. 2","pp. 445",1998,
"Y.Miyamoto,A.Kokubo,T.Hattori,H.Hongo,M.Suhara,K.Furuya","25 nm pitch GaInAs/InP buried structure : Improvement by calixarene as EB resist and TBP as P-source in OMVPE regrowth",,"  J. Vac. Sci. Technol. B",,"Vol. 16","No. 6","pp. 3894-3898",1998,