"T. Arai,H. Tobita,Y. Miyamoto,K. Furuya","GaAs buried growth over tungsten stripe using TEG and TMG",,"J. Crystal Growth",,"Vol. 221","No. 1-4","pp. 212-219",2000,
"栗田昌尚,宮本恭幸,古屋一仁","GaInAs/AlAs/InP構造真空エミッタからの電子放出",,"第61回応用物理学会学術講演会",,"Vol. 6p-ZB-12",,,2000,
"山上滋春,新井俊希,奥田慶文,宮本恭幸,古屋一仁","BMHBT微細化に向けた0.5μｍ幅エミッタInP系DHBTの作製と評価",,"第61回応用物理学会学術講演会",,"Vol. 3p-ZQ-3",,,2000,
"小口博嗣,佐藤航一郎,宮本恭幸,古屋一仁","電子波干渉素子用GaInAs上80nm周期電極の特性",,"第47回応用物理学会関係連合講演会",,"Vol. 30p-YD-1",,,2000,
"新井俊希,飛田洋,宮本恭幸,古屋一仁","TMGとTEGを材料としたタングステン細線のGaAs OMVPE埋め込み成長",,"第47回応用物理学会関係連合講演会",,"Vol. 31a-P20-10",,,2000,
"新井俊希,原田恵充,山上滋春,宮本恭幸,古屋一仁","Buried Metal Heterojunction Bipolar Transistorにおけるベースコレクタ間容量の低減",,"第47回応用物理学会関係連合講演会",,"Vol. 28a-ZA-3",,,2000,
"Y. Miyamoto,R. Yamamoto,H. Tobita,K. Furuya","Very shallow n-GaAs ohmic contact with 10nm thick GaInAs layer",,"19th Electronic Materials Symposium",,"Vol. B2",,,2000,
"T. Arai,S. Yamagami,Y. Okuda,Y. Harada,Y. Miyamoto,K. Furuya","InP DHBT with 0.5μm Wide Emitter along 010 Direction toward BM-HBT with Narrow Emitter",,"Topical Workshop on Heterostructure Microelectronics (TWHM'00)",,"Vol. Tue-3",,,2000,
"Y. Miyamoto,M. Kurita,K. Furuya","Vacuum Microelectronic Electron Emitter by InP Double Barrier Diode Toward RFApplication",,"58th Annual Device Research Conference",,"Vol. III-5",,,2000,
"T. Arai,H. Tobita,Y. Miyamoto,K. Furuya","GaAs buried growth over tungsten stripes using TEG and TMG",,"11th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE XI)",,"Vol. Tu-A3",,,2000,
"T. Arai,Y. Harada,S. Yamagami,Y. Miyamoto,K. Furuya","C<sub>BC</sub> reduction in GaInAs/InP buried metal heterojunction bipolar transistor",,"Twelfth International Conference on Indium Phosphide and Related Materials (IPRM'00)",,"Vol. TuB1.6",,,2000,
"YASUYUKI MIYAMOTO","Peak Width Analysis of Current-Voltage Characteristics of Triple-Barrier Resonant Tunneling Diodes",,"Jpn. J. Appl. Phys",,"Vol. 39","No. 6A","pp. 3314",2000,
"T. Arai,Y. Harada,S. Yamagami,Y. Miyamoto,K. Furuya","First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance",," Jpn. J. Appl. Phys.",,"Vol. 39","No. 6A","pp. L503-L505",2000,
"T. Arai,H. Tobita,Y. Harada,M. Suhara,Y. Miyamoto,K. Furuya","Toward nano-metal buried structure in InP - 20 nm wire and InP buried growth of tungsten",,"Physica E",,"Vol. 7","No. 3-4","pp. 896",2000,
"Y. Miyamoto,A. Kokubo,H. Oguchi,M. Kurahashi,K. Furuya","Fabrication and transport properties of 50-nm-wide Au/Cr/GaInAs electrode for electron wave interference device",,"Applied Surface Science",,"Vol. 159-160","No. 1-4","pp. 179-185",2000,