"諏訪輝  長谷川貴史  日野高宏  宮本恭幸  古屋　一仁","絶縁ゲートにより制御するホットエレクトロントランジスタの作製","電子情報通信学会電子デバイス研究会","電子情報通信学会電子デバイス研究会",,,,"pp. ED2006-186",2006,Dec.
"Chia-Yuan Chang,Edward Yi Chang,Yi-Chung Lien,Yasuyuki Miyamoto,Chien-I Kuo,Sze-Hung  Cheng,Li-Hsin  Chu","High-PerformanceIn0.52Al0.48As/In0.6Ga0.4AsPower Metamorphic HEMT for Ka-Band Applications,","IEEE International Conference on Semiconductor Electronics",,,,,,2006,Nov.
"Y. Miyamoto,R. Nakagawa,I. Kashima,A. Suwa,N. Machida,K. Furuya","25-nm-wide emitter for InP hot electron transistors without base layer","International Topical Workshop "Tera- and Nano-Devices:Physics and Modeling"","International Topical Workshop "Tera- and Nano-Devices:Physics and Modeling"",,,,"pp. III.2",2006,Oct.
"T. Kai,Y. Fukuyama,Y. Miyamoto,K. Furuya,K. Kurishima,S. Yamahata","Electron Beam Lithography for Non Self-Aligned HBTs with Extremely Narrow Emitter Mesa","2006 International Microprocesses and Nanotechnology Conference","2006 International Microprocesses and Nanotechnology Conference",,,,"pp. 26A-4-4",2006,Oct.
"Nobuya Machida,Yasuyuki Miyamoto,Kazuhito Furuya","Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism",," Jpn. J. Appl. Phys.",,"Vol. 45","No. 35","pp. L935 - L937",2006,Sept.
"諏訪　輝,長谷川貴史,日野高宏,宮本恭幸,古屋一仁","新ホットエレクトロントランジスタの室温動作にむけた新構造の提案","応用物理学会学術講演会","応用物理学会学術講演会",,,,"pp. 31p-ZB-3",2006,Aug.
"五十嵐満彦,山田朋宏,町田信也,宮本恭幸,古屋一仁","ゲート制御ホットエレクトロントランジスタの実験構造を考慮したモンテカルロ解析","応用物理学会学術講演会","応用物理学会学術講演会",,,,"pp. 31p-ZB-4",2006,Aug.
"甲斐敬紹,福山義人,宮本恭幸,古屋一仁","狭メサHBTの為のノンセルフアラインメント電子ビーム露光","応用物理学会学術講演会","応用物理学会学術講演会",,,,"pp. 31p-ZB-2",2006,Aug.
"宮本恭幸,石田昌司,山本徹,三浦司,古屋一仁","MOVPEによるInP中のSiO2細線埋め込み成長とそのHBTコレクタ容量低減への応用","電子情報通信学会電子デバイス研究会","電子情報通信学会電子デバイス研究会",,,,"pp. ED2006-44",2006,June
"Y. Miyamoto,I. Kashima,A. Suwa,K. Furuya","Increase in current density at 25-nm-wide emitter for InP hot-electron transistors without base layer","64th Annual Device Research Conference","64th Annual Device Research Conference",,,,"pp. V.A-7",2006,June
"Y. Miyamoto,M. Ishida,T. Yamamoto,T. Miura,K. Furuya","InP Buried growth of SiO2 wires toward reduction of collector","13th International Conference on Metalorganic Vapor Phase Epitaxy","13th International Conference on Metalorganic Vapor Phase Epitaxy",,,,"pp. We-A3-1",2006,May
"N. Machida,Y. Miyamoto,K. Furuya","Minimum emitter charging time for heterojunction bipolar transistors","The 18th Indium Phosphide and Related Materials Conference","The 18th Indium Phosphide and Related Materials Conference",,,,"pp. WP16",2006,May
"町田信也,五十嵐満彦,山田朋宏,宮本恭幸,古屋一仁","ゲート制御ホットエレクトロントランジスタのモンテカルロ解析","応用物理学会学術講演会","応用物理学会学術講演会",,,,"pp. 23a-ZE-20",2006,Mar.
"鹿嶋一生,諏訪　輝,古屋一仁,宮本恭幸","ゲートにより制御するホットエレクトロントランジスタにおける電流量の増大","応用物理学会学術講演会","応用物理学会学術講演会",,,,"pp. 23a-ZE-21",2006,Mar.
"町田信也,宮本恭幸,古屋一仁","ヘテロ接合バイポーラトランジスタの最小エミッタ充電時間","応用物理学会学術講演会","応用物理学会学術講演会",,,,"pp. 23a-ZE-23",2006,Mar.
"石田昌司,山本　徹,三浦　司,宮本恭幸,古屋一仁","SiO2細線埋め込み成長によるInP系HBTのコレクタ容量低減の提案","応用物理学会学術講演会","応用物理学会学術講演会",,,,"pp. 23a-ZE-23",2006,Mar.
"町田信也,五十嵐満彦,山田朋宏,宮本恭幸,古屋一仁","ゲートにより制御するホットエレクトロントランジスタの高周波特性予測","電子情報通信学会電子デバイス研究会","電子情報通信学会電子デバイス研究会",,,,"pp. ED2005-197, MW2005-151",2006,Jan.
"鹿嶋一生,諏訪　輝,宮本恭幸,古屋一仁","ゲートにより制御するホットエレクトロントランジスタにおける電流量の増大","電子情報通信学会電子デバイス研究会","電子情報通信学会電子デバイス研究会",,,,"pp. ED2005-196, MW2005-150",2006,Jan.
"K Furuya,N Machida,M Igarashi,R Nakagawa,I Kashima,M Ishida,Y Miyamoto","MC simulation of ultrafast transistor using ballistic electron in intrinsic semiconductor and its fabrication feasibility",,"J. Physics: Conference Series",,"Vol. 38",,"pp. 208-211",2006,