"So Nishimura,KAZUHITO FURUYA,YASUYUKI MIYAMOTO","Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe ? Quantitative Evaluation of Observation Possibility ?",,"Jpn. J. Appl.Phys.",,"vol. 47","no. 9","pp. 8652-8658",2008,Nov.
"So Nishimura,KAZUHITO FURUYA,YASUYUKI MIYAMOTO","Design and Simulation of Hot-Electron Diffraction Oservation by Scanning Probe ? Quantitative Evaluation of Observation Possibility ?",,"Jap. J. Appl. Phys.",,"vol. 47","no. 9","pp. 8652-8658",2008,Nov.
"Yasuyuki Miyamoto,Takashi Hasegawa,Hisashi Saito,Kazuhito Furuya","RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor","IEEE Nanotechnology Materials and Devices Conference 2008",,,,,,2008,Oct.
"Shinnosuke Takahashi,Hiroaki Yamashita,Takashi Kobayashi,Yuji Isogai,Hiroyuki Suzuki,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","InP/InGaAs SHBTs with 200nm wide emitter fabricated by EB lithography","The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics",,,,,,2008,Sept.
"Takafumi Uesawa,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","Monte Carlo Simulation of Plasmon Scattering in Base Layer of InP/InGaAs HBTs","The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics",,,,,,2008,Sept.
"Hisashi Saito,Ryoung-A Maeng,Yasuyuki Miyamoto,Kazuhito Furuya","Improvement of gate controllability of Hot Electron Transistor controlled by insulated gate","The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics",,,,,"  1262",2008,Sept.
"Toru Kanazawa,KAZUHITO FURUYA,YASUYUKI MIYAMOTO,Hisashi Saito,kazuya wakabayashi,Tomonori Tajima","Lateral buried growth of n<sup>+</sup>-InGaAs source/drain region for high drive current III-V channel MOSFET","The 69th Autumn Meeting, 2008; The Japan Society of Applied Physics",,,,,,2008,Sept.
"T. Kanazawa,H. Saito,K. Wakabayashi,Y. Miyamoto,K. Furuya","Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET","2008 International Conference on Solid State Devices and Materials",,,,,,2008,Sept.
"C. Y. Chang,H. T. Hsu,E. Y. Chang,C. I. Kuo,Y. Miyamoto","InAs-Channel HEMTs for Ultra- Low-Power LNA Applications","2008 International Conference on Solid State Devices and Materials",,,,,,2008,Sept.
"Chien-I KUO,Heng-Tung HSU,Edward Yi CHANG,Yasuyuki MIYAMOTO,Wen-Chung TSERN","InAs High Electron Mobility Transistors with Buried Gate for Ultralow-Power-Consumption Low-Noise Ampli?er Application",,"Japanese Journal of Applied Physics","The Japan Society of Applied Physics","Vol. 47","No. 9","pp. 7119?7121",2008,Sept.
"H. Saito,Y. Miyamoto,K. FUruya","Increment of voltage gain of InP/InGaAs Hot Electron Transistors controlled by insulated gate","International Nano-Optoelectronic Workshop (iNOW 2008)","Nano-Optoelectronics Workshop, 2008. i-NOW 2008. International",,,,"  355",2008,Aug.
"So Nishimura,TUYOSHI ARAI,YASUYUKI MIYAMOTO,KAZUHITO FURUYA","弾道電子放出顕微鏡を利用した電子波回折観測の可能性",,,,,,,2008,July
"Hisashi Saito,Takahiro Hino,Yasuyuki Miyamoto,Kazuhito Furuya","Hot electron transistor controlled by insulated gate with 70nm-wide emitter","IEEE 20th Conference on Indium Phosphide and Related Materials",,,,,,2008,May
"Chien-I  Kuo,Edward Yi  Chang,Chia-Yuan  Chang,Heng-Tung  Hsu,YASUYUKI MIYAMOTO","Investigation of impact ionization from InXGa1-XAs to InAs channel HEMTs for high speed and low power applications","The 20th Indium Phosphide and Related Material Conf. (IPRM 2008)",,,,,,2008,May
"Chien-I Kuo,Heng-Tung Hsu,Edward Yi Chang,Chia-Yuan Chang,Yasuyuki Miyamoto,Suman Datta,Marko Radosavljevic,Guo-Wei Huang,Ching Ting Lee","RF and Logic Performance Improvement of In0.7Ga0.3As/InAs/In0.7Ga0.3As composite channel HEMTs Using Gate-Sinking Technology",,"IEEE Electron Device Lett.","IEEE","vol. 29","no. 4","pp. 290-293",2008,Apr.
"TOMOHIRO YAMADA,Takafumi Uesawa,KAZUHITO FURUYA,YASUYUKI MIYAMOTO","ゲート制御ホットエレクトロントランジスタのバリスティックモデル解析","応用物理学会春季",,,"  29a-D-3",,,2008,Mar.
"Hisashi Saito,Maeng Ryoung-A,Yasuyuki Miyamoto,Kazuhito Furuya","Voltage gain increase of Hot Electron Transistor controlled by insulated gate","The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Related Societies",,,,,"  1471",2008,Mar.
"Mitsuhiko Igarashi,KAZUHITO FURUYA,YASUYUKI MIYAMOTO","Cutoff Frequency Characteristics of Gate-Control Hot Electron Transistors by Monte Carlo Simulation",,"Physica Status Solidi(C)",,"vol. 5","no. 1","p. 70",2008,Jan.