"Y. Miyamoto,T. Kanazawa,Y. Yonai,A. Kato,K. Ohsawa,M. Oda,T. Irisawa,T. Tezuka","Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density","44th IEEE Semiconductor Interface Specialists Conference (SICS 2013)",,,,,,2013,Dec.
"T. Irisawa,M. Oda,K. Ikeda,Y. Moriyama,E. Mieda,W. Jevasuwan,T. Maeda,O. Ichikawa,T. Osada,M. Hata,Y. Miyamoto,T. Tezuka","High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Growth on Narrow Fin Structures","2013 International Electron Devices Meeting",,,,,,2013,Dec.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,JoonHyun Kang,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","メタマテリアルを用いたInP系プラットフォームにおける透磁率制御","電子情報通信学会 光エレクトロニクス研究会（OPE）","IEICE Technical Report",,"Vol. 113","No. 370","pp. 45-50",2013,Dec.
"Yuki Atsumi,N. Taksatorn,N. Nishiyama,Y. Miyamoto,S.Arai","Miniaturization of exposure area for electron beam lithography using proximity effect correction toward Si optical circuits","26th International Microprocesses and Nanotechnology Conference (MNC 2013)",,,,,,2013,Nov.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Myoga,JoonHyun Kang,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","(Invited) Photonic metamaterials in semiconductor optical devices","2013 EMN Open Access Week",,,,,,2013,Oct.
"山口 裕太郎,林 一夫,大石 敏之,大塚 浩志,山中 宏治,YASUYUKI MIYAMOTO","C-10-1 ソースフィールドプレートGaN HEMTのドレインソース間容量とドレイン抵抗のトレードオフの解析(C-10.電子デバイス,一般セッション)",,"電子情報通信学会ソサイエティ大会講演論文集","一般社団法人電子情報通信学会","Vol. 2013","No. 2","pp. 53",2013,Sept.
"M. Kashiwano,A. Yukimachi,Y. Miyamoto","Dependence of the Carrier Concentration in InGaAs/InP Superlattice-based FETs with a Steep Subthreshold Slope","2013 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2013,Sept.
"Y. Yamaguchi,K. Hayashi,T. Oishi,H. Otsuka,K. Yamanaka,Y. Miyamoto","Analysis on trade-off between drain resistance and drain-source capacitance of source field plate GaN HEMT","2013 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2013,Sept.
"M. Oda,T. Irisawa,E. Mieda,Y. Kurashima,H. Takagi,W. Jevasuwan,T. Maeda,O. Ichikawa,T. Ishihara,T. Osada,Y. Miyamoto,T. Tezuka","Suppression of short channel effects in accumulation-type UTB-InGaAs-OI nMISFETs with raised S/D fabricated by gate-last process","2013 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2013,Sept.
"K. Ohsawa,A. Kato,T. Sagai,T. Kanazawa,E. Uehara,Y. Miyamoto","Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density","10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)",,,,"  2-9","pp. 19-20",2013,Sept.
"YASUYUKI MIYAMOTO,Toru Kanazawa","InGaAs MOSFETの現状と将来展望","電気学会 電子・情報・システム部門大会",,,,,,2013,Sept.
"Masashi Kashiwano,Atsushi Yukimachi,YASUYUKI MIYAMOTO","急峻なSS特性の為のInGaAs/InP超格子FETにおけるキャリア濃度依存性","第74回秋季応用物理学会学術講演会",,,,,,2013,Sept.
"Kazuto Ohsawa,atsushi kato,Takeru Sagai,Toru Kanazawa,Eiji Uehara,YASUYUKI MIYAMOTO","高電流密度化に向けたInPソースを有するIII-V-OI InGaAs MOSFETのチャネル厚依存性","第74回秋季応用物理学会学術講演会",,,,,,2013,Sept.
"Y. Miyamoto","InGaAs channel MOSFET for high-speed/low-power application","The 16th International Symposium on the Physics of Semiconductors and Applications (ISPSA)",,,,,,2013,July
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Myoga,Eijun Murai,Takahiko Shindo,J. Kang,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Electrically-driven Permeability-controlled Optical Modulator using Mach-Zehnder Interferometer with Metamaterial","The Conference on Lasers and Electro-Optics 2013 (CLEO 2013)",,,,"No. QM1A.6",,2013,June
"A. Kato,T. Kanazawa,Eiji Uehara,Y. Yonai,Y. Miyamoto","Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate","25th Int. Conf. Indium Phosphide and Related Materials (IPRM2013)",,,,,,2013,May
"YASUYUKI MIYAMOTO","超高速トランシ?スタ技術の現状と展望","2013年電子情報通信学会総合大会",,,,,,2013,Mar.
"atsushi kato,Yosiharu Yonai,Toru Kanazawa,YASUYUKI MIYAMOTO","Si 基板上 InGaAs-MOSFET の微細化に関する研究","第 60 回応用物理学会春季学術講演会",,,,,,2013,Mar.
"YASUYUKI MIYAMOTO","東工大の微細加工プラットフォームにおける支援事例","日本化学会第93春季年会",,,,,,2013,Mar.
"Takeru Sagai,Eiji Uehara,Kazuto Ohsawa,YASUYUKI MIYAMOTO","n-InP ソースを持つT ケ?ート構造 InGaAs-MOSFET の高周波特性","2013年電子情報通信学会総合大会",,,,,,2013,Mar.
"YASUYUKI MIYAMOTO,Motohiko Fujimatsu","GaAsSb/InGaAs 縦型トンネル FET","電気学会電子デバイス研究会",,,,,,2013,Mar.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Miyouga,Eijun Murai,Takahiko Shindou,JoonHyun Kang,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","微細金属構造をもつ導波路型光デバイスにおける相互作用距離の解析","第60回応用物理学関係連合講演会","第60回応用物理学関係連合講演会",,"  29p-B3-14",,,2013,Mar.
"YASUYUKI MIYAMOTO","微細加工ナノプラットフォームコンソーシアムによる設備共用の取り組み","電子情報通信学会シリコンフォトニクスファウンドリユーザー及びポテンシャルユーザーズフォーラム",,,,,,2013,Jan.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Seiji Myoga,Eijun Murai,Takahiko Shindo,J. Kang,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Permeability-controlled Optical Modulator with Tri-gate Metamaterial","the 4th International Topical Meeting on Nanophotonics and Metamaterials (NANOMETA 2013)",,,,"No. FRI5o.2",,2013,Jan.
"芝原 健太郎,YASUYUKI MIYAMOTO,Ken Uchida","タウア・ニン 最新VLSIの基礎 第二版",,,"丸善",,,,2013,Jan.
"C.-H. Yu,H.-T. Hsu,C.-Y. Chiang,C.-I Kuo,Y. Miyamoto,E. Y. Chang","Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching",,"JPN. J. APPL. PHYS.",,"vol. 52","no. 2",,2013,
"林 一夫,大石 敏之,加茂 宣卓,Yuutarou Yamaguchi,大塚 浩志,山中 宏治,中山 正敏,YASUYUKI MIYAMOTO","AlGaN/GaN HEMTにおけるドレーン漏れ電流の解析",,"電子情報通信学会論文誌. C, エレクトロニクス",,"Vol. J96-C","No. 8","pp. 200-208",2013,
"K. Hayashi,Y. Yamaguchi,T. Oishi,H. Ostuka,K. Yamanaka,M. Nakayama,Y. Miyamoto","Mechanism Study of Gate Leakage Current for AlGaN/GaN HEMT Structure Under High Reverse Bias by TSB Model and TCAD Simulation",,"JPN. J. APPL. PHYS.",,"vol. 54","no. 4","  issue 2",2013,
"Takafumi Uesawa,YASUYUKI MIYAMOTO","縦型 ケ?ート制御ホットエレクトロントランシ?スタの新しい遮断周波数算出方法",,"電子情報通信学会論文誌",,"Vol. J96-C","No. 7","pp. 174-179",2013,
"M. Kashiwano,J. Hirai,S. Ikeda,M. Fujimatsu,Y. Miyamoto","High Open-Circuit Voltage Gain in Vertical InGaAs Channel Metal?Insulator?Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa",,"JPN. J. APPL. PHYS.",,"vol. 54","no. 4","  issue 2",2013,
"E. Y. Chang,C.-I Kuo,H.-T. Hsu,C.-Y. Chiang,Y. Miyamoto","InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications",,"Appl. Phys. Exp.",,"vol. 6","no. 3",,2013,