"K. Makiyama,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,Y. Niida,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","Collapse Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz","2015 IEEE International Electron Devices Meeting (IEDM)",,,,,,2015,Dec.
"F. A. Fatah,Y.-C. Lin,T.-Y. Lee,K.-C. Yang,R.-X. Liu,J.-R. Chan,H.-T. Hsu,Y. Miyamoto,E. Y. Chang","Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications",,"Solid State Sci. Technol",,"volume 4","  issue 12","  N157-N159",2015,Oct.
"Y. Miyamoto,T. Kanazawa,Y. Yonai,K. Ohsawa,Y. Mishima,M. Fujimatsu,K. Ohashi,S. Nestu,S. Iwata","InGaAs channel for low supply voltage","2015 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2015,Sept.
"Atsushi Yukimachi,YASUYUKI MIYAMOTO","超格子FET のためのAlAs/InGaAsダブルバリアp-i-n 接合ダイオード","第76回応用物理学会秋季学術講演会",,,,,"  16a-4C-3",2015,Sept.
"Toru Kanazawa,Tomohiro Amemiya,Atsushi Ishikawa,Vikrant Upadhyaya,Takuo Tanaka,Kenji Tsuruta,Yasuyuki Miyamoto","HfS2 Electric Double Layer Transistor with High Drain Current","47th International Conference on Solid State Devices and Materials (SSDM 2015)",,,,,,2015,Sept.
"Y. Miyamoto,M. Fujimatsu,K. Ohashi,A. Yukimachi,S. Iwata","Steep subthreshold slope in InGaAs MOSFET","SemiconNano2015",,,,,,2015,Sept.
"S. Iwata,W. Lin,K. Fukuda,Y. Miyamoto","Design of drain for low off current in GaAsSb/InGaAs tunnel FETs","2015 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2015,Sept.
"Haruki Kinoshita,Toru Kanazawa,Netsu Seikou,Yuichi Mishima,YASUYUKI MIYAMOTO","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセス","第76回応用物理学会秋季学術講演会",,,,,"  16a-1C-9",2015,Sept.
"H.Kinoshita,S.Netsu,Y.mishima,T.Kanazawa,Y.Miyamoto","Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain","11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)",,,,,,2015,Aug.
"K. Ohsawa,Y. Mishima,Y. Miyamoto","Operation of 13-nm channel length InGaAs-MOSFET with n-InP source","27th International Conference on Indium Phosphide and Related Materials",,,,,,2015,July
"S. Netsu,T. Kanazawa,Y. Miyamoto","Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing","27th International Conference on Indium Phosphide and Related Materials",,,,,,2015,July
"Tomohiro Amemiya,Atsushi Ishikawa,Toru Kanazawa,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","(Invited) Possibility of permeability control on InP-based photonic integration platform","8th International Conference on Materiaals for Advanced Tachnologies (ICMAT 2015)",,,,"No. D2-PM2",,2015,June
"R Yamanaka,T. Kanazawa,E. Yagyu,Y. Miyamoto","Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique",,"Jpn. J. Appl.Phys.",,"Volume 54","Number S61",,2015,June
"T. Kanazawa,T. Amemiya,A. Ishikawa,V. Upadhyaya,K. Tsuruta,T. Tanaka,Y. Miyamoto","Fabrication of Thin-Film HfS2 FET","73rd Device Research Conference (DRC)",,,,,,2015,June
"Tomohiro Amemiya,Atsushi Ishikawa,Toru Kanazawa,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","光通信素子における透磁率制御の可能性","第136回微小光学研究会",,,,,,2015,May
"K. Ohashi,M. Fujimatsu,S. Iwata,Y. Miyamoto","Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs",,"Jpn. J. Appl.Phys.",,"Vol. 54","Number 4S",,2015,Apr.
"Haruki Kinoshita,Toru Kanazawa,Netsu Seikou,Yuichi Mishima,YASUYUKI MIYAMOTO","再成長ソース/ドレインを有するInGaAsマルチゲートMOSFET作製プロセスに関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"Atsushi Yukimachi,Masashi Kashiwano,YASUYUKI MIYAMOTO","超格子FETに向けたダブルバリアp-i-n接合ダイオード","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"Netsu Seikou,Toru Kanazawa,YASUYUKI MIYAMOTO","HfO2/Al2O3/In0.53Ga0.47As界 面に対する窒素プラズマクリーニング後の水素アニール効果に関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"Kazuto Ohsawa,Yuichi Mishima,YASUYUKI MIYAMOTO","InGaAs-MOSFETのチャネル長微細化に関する研究","第62回応用物理学会春季学術講演会",,,,,,2015,Mar.
"YASUYUKI MIYAMOTO,Atsushi Yukimachi","超格子ソースによるスティープスロープFETの可能性","電子情報通信学会 総合大会",,,,,,2015,Mar.
"Shinjiro Iwata,Kazumi Ohashi,YASUYUKI MIYAMOTO","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおけるI-V特性の不純物濃度依存性","電子情報通信学会 総合大会",,,,,,2015,Mar.
"Tomohiro Amemiya,Atsushi Ishikawa,Toru Kanazawa,JoonHyun Kang,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Permeability-controlled Optical Modulator with Tri-gate Metamaterial: Control of Permeability on InP-based Photonic Integration Platform",,"Scientific Reports",,"Vol. 5",,"pp. 8985",2015,Mar.
"Toru Kanazawa,Tomohiro Amemiya,Atsushi Ishikawa,Kenji Tsuruta,Takuo Tanaka,YASUYUKI MIYAMOTO","薄膜HfS2 FET","第62回応用物理学会春季学術講演会",,,,"No. 14p-D7-6",,2015,Mar.
"Atsushi Ishikawa,Toru Kanazawa,Tomohiro Amemiya,Kenji Tsuruta,Takuo Tanaka,YASUYUKI MIYAMOTO","機械的剥離法を用いたHfS2原子薄膜の作製と基礎物性の評価","第62回応用物理学会春季学術講演会",,,,"No. 11a-P6-27",,2015,Mar.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Takuo Tanaka,Shigehisa Arai","Permeability Engineering of Semiconductor Photonic Devices",,"Interferometers: Fundamentals, Methods and Applications (ISBN: 978-1-63483-692-0)","Nova Science Publishers",,,"pp. 15-36",2015,