"K. Makiyama,Y. Niida,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","High-Power-Density InAlGaN/GaN-HEMT Technology for W-Band Amplifier (Invited)","2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)",,,,,,2016,Oct.
"A. Yukimachi,Y. Miyamoto","InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope",,"Jpn. J. Appl. Phys.",,"vol. 55","  118004",,2016,Oct.
"Toru Kanazawa,Vikrant Upadhyaya,Tomohiro Amemiya,Atsushi Ishikawa,鶴田 健二,Takuo Tanaka,YASUYUKI MIYAMOTO","HfO2パッシベーションによるHfS2 FETの特性改善","第77回応用物理学会秋季学術講演会",,,,"No. 16a-A32-3",,2016,Sept.
"Kazuto Ohsawa,Nobukazu Kise,YASUYUKI MIYAMOTO","15p-B9-10 HfO2/Al2O3/InGaAsゲート構造における移動度の成膜温度およびAl2O3膜厚依存性","第77回応用物理学会秋季学術講演会",,,,,,2016,Sept.
"Toru Kanazawa,Tomohiro Amemiya,YASUYUKI MIYAMOTO","二次元材料HfS2を用いたMOSトランジスタ",,"月刊機能材料",,"Vol. 36","No. 9","pp. 46-52",2016,Sept.
"Y. Miyamoto","Recent progress in compound semiconductor electron devices (Review paper)",,"IEICE Electronics Express",,"Vol. 13(2016)","No. 18","pp. 1-13",2016,Sept.
"K. Ohsawa,N. Kise,Y. Miyamoto","Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks","2016 International Conference on Solid State Devices and Materials (SSDM)",,,,,,2016,Sept.
"Nobukazu Kise,Haruki Kinoshita,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain",,"Solid-State Electronics",,"Vol. 126",,"pp. 92-95",2016,Sept.
"Toru Kanazawa,Tomohiro Amemiya,Vikrant Upadhyaya,Atsushi Ishikawa,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Effect of the HfO2 passivation on HfS2 Transistors","16th International Conference on Nanotechnology (IEEE NANO 2016)",,,,"No. ThAM11.3",,2016,Aug.
"K. Makiyama,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,Y. Niida,Y. Kamada,M. Sato,K. Joshin,K. Watanabe,Y. Miyamoto","High-Performance GaN-HEMT Technology for W-band Amplifier (Invited)","URSI AP-RASC 2016",,,,,,2016,Aug.
"M. Kashiwano,A. Yukimachi,Y. Miyamoto","Experimental approach for feasibility of superlattice FETs","2016 Lester Eastman Conference (LEC)",,,,,"pp. 8-11",2016,Aug.
"K. Makiyama,S. Ozaki,Y. Niida,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","InAlGaN/GaN-HEMT device technologies for W-band high-power amplifier (Invited)","2016 Lester Eastman Conference (LEC)",,,,,"pp. 31-34",2016,Aug.
"Tomohiro Amemiya,Toru Kanazawa,Atsushi Ishikawa,Nobuhiko Nishiyama,Yasuyuki Miyamoto,Tatsuhiro Urakami,Takuo Tanaka,Shigehisa Arai","(Invited) Permeability Engineering in Optical Communication Devices","The First A3 Metamaterials Forum",,,"  I-25",,,2016,July
"Vikrant Upadhyaya,Toru Kanazawa,YASUYUKI MIYAMOTO","Vacuum annealing and passivation of Hf<sub>2</sub> FET for mitigation of atmospheric degradation","2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016)",,,,"  A5-7","pp. 231-235",2016,July
"Y. Miyamoto,W. Lin,S.Iwata,K. Fukuda","Steep sub-threshold slope in short-channel InGaAs TFET  (Invited)","The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2016)",,,,,"  A6-I-01",2016,July
"Wenbo Lin,Shinjiro Iwata,Koichi Fukuda,Yasuyuki Miyamoto","Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration",,"Japanese Journal of Applied Physics",,"Vol. 55","No. 7","pp. 070303",2016,June
"Haruki Kinoshita,Nobukazu Kise,Atsushi Yukimachi,Toru Kanazawa,Yasuyuki Miyamoto","Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain","Compound Semiconductor Week (CSW2016)",,,,"  TuD4-2",,2016,June
"Vikrant Upadhyaya,Toru Kanazawa,Yasuyuki Miyamoto","Evaluation of electrical properties of HfS<sub>2</sub> thin flakes obtained by mechanical exfoliation","電子情報通信学会電子デバイス研究会","信学技報",,"vol. 116","no. 48","pp. 47-50",2016,May
"YASUYUKI MIYAMOTO","III-V族チャネルを持つMOSFET (特集解説)",,"電気学会論文誌C",,"vol. 136","no. 4","pp. 437-443",2016,Apr.
"Shinjiro Iwata,Kazumi Ohashi,Wenbo Lin,Koichi Fukuda,YASUYUKI MIYAMOTO","GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性",,"電気学会論文誌C",,"Vol. 136","no. 4","pp. 467-473",2016,Apr.
"Y. Miyamoto","Steep slope devices with InGaAs channel for post Si CMOS application","China Semiconductor Technology International Conference (CSTIC) 2016",,,,,,2016,Mar.
"Haruki Kinoshita,Nobukazu Kise,Netsu Seikou,Toru Kanazawa,YASUYUKI MIYAMOTO","再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,,"  22p-W541-5",,2016,Mar.
"Wenbo Lin,Shinjiro Iwata,Koichi Fukuda,YASUYUKI MIYAMOTO","Contribution to Off-Current of Source-Drain Direct Tunneling in Short-Channel TFET","The 63rd JSAP Spring Meeting 2016",,,,,,2016,Mar.
"Upadhyaya Vikrant,kanazawa Toru,Miyamoto Yasuyuki","Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor","第63回応用物理学会春季学術講演会",,,,"  21p-H103-2",,2016,Mar.
"Toru Kanazawa,Tomohiro Amemiya,Atsushi Ishikawa,Vikrant Upadhyaya,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Few Layer HfS2 FET",,"Scientific Reports",,"Vol. 6",,"pp. 22277",2016,Mar.
"Haruki Kinoshita,Nobukazu Kise,Netsu Seikou,Toru Kanazawa,YASUYUKI MIYAMOTO","[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.
"F. A. Fatah,Y.-C. Lin,R.-X. Liu,K.-C. Yang,T.-W. Lin,H.-T. Hsu,J.-H. Yang,Y. Miyamoto,H. Iwai,C. Hu,S. Salahuddin,E. Y. Chang","A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/ In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications,",,"Applied Physics Express",,"Volume 9","  026502",,2016,Jan.