"Toru Kanazawa,Yasuyuki Miyamoto","Development of Field-Effect Transistor  Using 2D Layered Hafnium Disulfide","IWPSD 2017",,,,,"  2D06",2017,Dec.
"K. Makiyama,T. Ohki,S. Ozaki,Y. Niida,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,T. Ishiguro,K. Joshin,N. Nakamura,Y. Miyamoto","InAlGaN/GaN-HEMT Device Technologies for High-Power-Density W-band Amplifiers (Invited)","International Conference on Materials and Systems for Sustainability 2017 (ICMaSS2017 )",,,,,"  30-Nitride-3",2017,Sept.
"Netsu Seikou,Toru Kanazawa,Tomohiro Amemiya,YASUYUKI MIYAMOTO","HfS2/MoS2 ヘテロジャンクションの温度依存電流特性","第78回応用物理学会秋季学術講演会",,,,"No. 7p-C11-16",,2017,Sept.
"Kazuto Ohsawa,Toru Kanazawa,Nobukazu Kise,Tomohiro Amemiya,YASUYUKI MIYAMOTO","InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発","第78回応用物理学会秋季学術講演会",,,,"No. 8a-S22-2",,2017,Sept.
"Syougo Kunisada,Koichi Fukuda,YASUYUKI MIYAMOTO","[8a-C18-3] InGaAs/GaAsSbダブルゲートTunnel FETにおける量子効果の影響","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"Nobukazu Kise,Shinjiro Iwata,Ryousuke Aonuma,YASUYUKI MIYAMOTO","[8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"D. Nakajun,R. F. T. Fathulah,H. Fujita,E. Yagyu,Y. Miyamoto","Multi-level inverter by GaN HEMT on semi-insulating substrate","12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)",,,,"  4-4",,2017,Aug.
"Seiko Netsu,Toru Kanazawa,Vikrant Upadhyaya,Teerayut Uwanno,Tomohiro Amemiya,Kosuke Nagashio,Yasuyuki Miyamoto","Type II HfS2/MoS2 heterojunction Tunnel FET","12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)",,,,"No. 6-3",,2017,Aug.
"K. Makiyama,S. Ozaki,Y. Niida,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Yoichi Kamada,K. Joshin,N. Nakamura,Yasuyuki Miyamoto","Advanced HEMTs and MMICs Technologies for Next Generation Millimeter-wave Amplifiers (Invited)","12th International Conference on Nitride Semiconductor (ICNS)",,,,"  C1,1",,2017,July
"Toru Kanazawa,Tomohiro Amemiya,Vikrant Upadhyaya,Atsushi Ishikawa,Kenji Tsuruta,Takuo Tanaka,Yasuyuki Miyamoto","Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2",,"IEEE Transactions on Nanotechnology",,"Vol. 16","No. 4","pp. 582-587",2017,July
"YASUYUKI MIYAMOTO","ヘテロ構造電子デバイスとMOVPE/MBE (チュートリアル講演)","第9回 ナノ構造・エピタキシャル成長講演会",,,,"  T-Fr-1",,2017,July
"Y. Miyamoto,D. Nakajun,R. F. T. Fathulah,H. Fujita,E. Yagyu","High speed GaN HEMT for power electronics (Invited)","12th International Conference on Nitride Semiconductor (ICNS)",,,,"  C5.1",,2017,July
"N. Kise,S. Iwata,R. Aonuma,K. Ohsawa,Y. Miyamoto","GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature","Compound Semiconductor Week 2017",,,,"  C804",,2017,May
"Vikrant UPADHYAYA,Toru KANAZAWA,Yasuyuki MIYAMOTO","Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation",,"IEICE Transactions on Electronics",,"Vol. E100-C","No. 5","pp. 453-457",2017,May
"K. Makiyama,Y. Niida,S. Ozaki,T. Ohki,N. Okamoto,Y. Minoura,M. Sato,Y. Kamada,K. Joshin,K. Watanabe,Y. Miyamoto","GaN HEMT Device Technology for W-band Power Amplifiers (Invited)","Compound Semiconductor Week 2017",,,,"  A6-1",,2017,May
"Shinjiro Iwata,Nobukazu Kise,Ryousuke Aonuma,YASUYUKI MIYAMOTO","[16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"Kazuto Ohsawa,Shinji Noguchi,Netsu Seikou,Nobukazu Kise,YASUYUKI MIYAMOTO","[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"Toru Kanazawa,Tomohiro Amemiya,Netsu Seikou,Vikrant Upadhyaya,Koichi Fukuda,YASUYUKI MIYAMOTO","HfS2系トンネルトランジスタのデバイスシミュレーション","第64回応用物理学会春季学術講演会",,,,,"  16a-F203-3",2017,Mar.
"K. Ohsawa,S. Netsu,N. Kise,S. Noguchi,Y. Miyamoto","Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks",,"Jpn. J. Appl. Phys.",,"vol. 56","no. 4S","  04CG05 2017",2017,Mar.
"Ryousuke Aonuma,Shinjiro Iwata,Nobukazu Kise,YASUYUKI MIYAMOTO","68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET","電気学会電子デバイス研究会",,,,,"  EDD-17-051",2017,Mar.
"Netsu Seikou,Toru Kanazawa,Vikrant Upadhyaya,ウワンノー ティーラユット,Tomohiro Amemiya,長汐 晃輔,YASUYUKI MIYAMOTO","Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET","第64回応用物理学会春季学術講演会",,,,,"  16a-F203-4",2017,Mar.
"Tomohiro Amemiya,Satoshi Yamasaki,Toru Kanazawa,Atsushi Ishikawa,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,Takuo Tanaka,SHIGEHISA ARAI","光回路とプラズモニックメタマテリアル","第37回レーザー学会年次大会",,,,"No. 07pII.7",,2017,Jan.
"Kazuto Ohsawa,Shinji Noguchi,Netsu Seikou,Nobukazu Kise,YASUYUKI MIYAMOTO","HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響","電子情報通信学会電子デバイス研究会","信学技報",,"vol. 116","no. 431","pp. 35-40",2017,Jan.