"K. Hotta,Y. Tomizuka,K. Itagaki,I. Makabe,S. Yoshida,Y. Miyamoto","Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure","International Workshop on Nitride Semiconductors  (IWN 2018)",,,,,,2018,Nov.
"Y. Miyamoto","Prospective New Fuctionality of Monolithic GaN HEMT Integrated Circuits","4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4)",,,,,"  ED-III-1",2018,Nov.
"Y. Miyamoto,N. Kise,R. Aonuma","GaAsSb/InGaAs double gate tunnel FET operating below 60 mv/decade and temperature dependence of band-edge decay parameters","2018 Workshop on Innovative Nanoscale Devices and Systems (WINDS)",,,,,"  P7",2018,Nov.
"Tomohiro Amemiya,吉田 知也,渥美 祐樹,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,榊原 陽一,SHIGEHISA ARAI","Siフォトニクスによる光渦MUX/DEMUXモジュール",,"電子情報通信学会技術研究報告",,"  118(252)","  75-80",,2018,Oct.
"Koushi Hotta,Yumiko Tomizuka,Kosuke Itagaki,眞壁 勇夫,吉田 成輝,YASUYUKI MIYAMOTO","N極性GaN HEMT構造のコンタクト抵抗の熱処理温度依存性","第79回応用物理学会秋季学術講演会",,,,,"  20p-331-10",2018,Sept.
"Tomohiro Amemiya,吉田 知也,Yuki Atsumi,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,榊原 陽一,SHIGEHISA ARAI","Si湾曲カプラを用いた光渦MUX/DEMUXモジュール","第79回応用物理学会秋季学術講演会",,,,,"  18p-212A-10",2018,Sept.
"Shinjiro Iwata,Kazumi Ohashi,Netsu Seikou,Koichi Fukuda,YASUYUKI MIYAMOTO","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化","第76回応用物理学会秋季学術講演会",,,,,"  16a-1C-6",2018,Sept.
"Y. Higa,M. Yoshida,N. Nishiyama,Y. Miyamoto,Nobuyuki Kagi","High Power, 14xx-nm Eye-safe, Epitaxially Stacked Pulse Laser for Detection and Ranging Applications","2018 IEEE International Semiconductor Laser Conference (ISLC)",,,,,"  WC7",2018,Sept.
"Wenlun Zhang,Netsu Seikou,Toru Kanazawa,Tomohiro Amemiya,YASUYUKI MIYAMOTO","埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET","第79回応用物理学会秋季学術講演会",,,,,"  19a-212B-5",2018,Sept.
"Ryousuke Aonuma,Nobukazu Kise,YASUYUKI MIYAMOTO","Al2O3/ZrO2ゲート絶縁膜を使用したことによるGaAsSb/InGaAsダブルゲートトンネルFETの性能改善","第79回応用物理学会秋季学術講演会",,,,,"  21p-331-7",2018,Sept.
"R. Aonuma,N. Kise,Y. Miyamoto","Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al2O3/ZrO2 for gate insulator","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,,"  PS-1-14",2018,Sept.
"W. Zhang,S. Netsu,T.Kanazawa,T. Amemiya,Y. Miyamoto","p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,,"  M-7-03",2018,Sept.
"吉田匡廣,比嘉康貴,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,加木信行","測距用14xx-nm Eye-safe波長帯高出力エピタキシャルスタックパルスレーザ","電子情報通信学会エレクトロニクスソサエティ大会",,,,,"  C-4-5",2018,Sept.
"D. Nakajun,N. Kanai,R. F. T. Fathulah,H. Fujita,E. Yagyu,Y. Miyamoto","Multi-level inverter toward GaN HEMT monolithic integrated circuit","Les Eastman Conference 2018",,,,,"  IIIB-5",2018,Aug.
"Nanae Kanai,Kenichi Okada,Yasuyuki Miyamoto","Investigation of Active Load Matching Using GaN HEMT as Digital Switch","Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)",,,,,,2018,July
"Y.Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,Kazuto Ohsawa","Regrown Source / Drain in InGaAs Multi-Gate MOSFET","19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)",,,,,"  P2-32",2018,June
"YASUYUKI MIYAMOTO","The Potential of GaN HEMT on GaN Substrate","Nanotech Malaysia",,,,,,2018,May
"Seiko Netsu,Toru Kanazawa,Teerayut Uwanno,Tomohiro Amemiya,Kosuke Nagashio,Yasuyuki Miyamoto","Type-II HfS2/MoS2 Heterojunction Transistors",,"IEICE Transactions on Electronics",,"Vol. E101-C","No. 5","pp. 338-342",2018,May
"Toru Kanazawa,Kazuto Ohsawa,Tomohiro Amemiya,Nobukazu Kise,Ryosuke Aonuma,Yasuyuki Miyamoto","Fabrication of InGaAs Nanosheet Transistors with Regrown Source","Compound Semiconductor Week (CSW2018)",,,,,"  We3C3.2",2018,May
"Toru Kanazawa,Kazuto Ohsawa,Tomohiro Amemiya,Nobukazu Kise,Ryousuke Aonuma,YASUYUKI MIYAMOTO","InGaAsナノシートトランジスタの作製","第65回応用物理学会春季学術講演会",,,"  18a-G203-3",,,2018,Mar.
"Syougo Kunisada,Koichi Fukuda,YASUYUKI MIYAMOTO","GaAsSb/InGaAsダブルゲートTunnel FETにおける量子効果の検討‐正孔バンドの取り扱い","第65回応用物理学会春季学術講演会",,,,,"  18a-G203-7",2018,Mar.
"Nobukazu Kise,Ryousuke Aonuma,YASUYUKI MIYAMOTO","GaAsSb/InGaAsダブルゲートトンネルFETにおけるゲート金属形成プロセスの影響","第65回応用物理学会春季学術講演会",,,,,"  18p-C302-12",2018,Mar.
"S. Netsu,M. Hellenbrand,C. B. Zota,Y. Miyamoto,E. Lind","A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs",,"IEEE Journal of the Electron Devices Society",,"Vol. 6","  issue. 1","pp. 408-412 (2018).",2018,Feb.