"Y. Miyamoto","Prospective New Fuctionality of Monolithic GaN HEMT Integrated Circuits","4th Intensive Discussion on Growth of Nitride Semiconductors (IDGN-4)",,,,,"  ED-III-1",2018,Nov.
"Y. Miyamoto,N. Kise,R. Aonuma","GaAsSb/InGaAs double gate tunnel FET operating below 60 mv/decade and temperature dependence of band-edge decay parameters","2018 Workshop on Innovative Nanoscale Devices and Systems (WINDS)",,,,,"  P7",2018,Nov.
"K. Hotta,Y. Tomizuka,K. Itagaki,I. Makabe,S. Yoshida,Y. Miyamoto","Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure","International Workshop on Nitride Semiconductors  (IWN 2018)",,,,,,2018,Nov.
"Tomohiro Amemiya,吉田 知也,渥美 祐樹,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,榊原 陽一,SHIGEHISA ARAI","Siフォトニクスによる光渦MUX/DEMUXモジュール",,"電子情報通信学会技術研究報告",,"  118(252)","  75-80",,2018,Oct.
"Ryousuke Aonuma,Nobukazu Kise,YASUYUKI MIYAMOTO","Al2O3/ZrO2ゲート絶縁膜を使用したことによるGaAsSb/InGaAsダブルゲートトンネルFETの性能改善","第79回応用物理学会秋季学術講演会",,,,,"  21p-331-7",2018,Sept.
"Koushi Hotta,Yumiko Tomizuka,Kosuke Itagaki,眞壁 勇夫,吉田 成輝,YASUYUKI MIYAMOTO","N極性GaN HEMT構造のコンタクト抵抗の熱処理温度依存性","第79回応用物理学会秋季学術講演会",,,,,"  20p-331-10",2018,Sept.
"Tomohiro Amemiya,吉田 知也,Yuki Atsumi,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,榊原 陽一,SHIGEHISA ARAI","Si湾曲カプラを用いた光渦MUX/DEMUXモジュール","第79回応用物理学会秋季学術講演会",,,,,"  18p-212A-10",2018,Sept.
"Wenlun Zhang,Netsu Seikou,Toru Kanazawa,Tomohiro Amemiya,YASUYUKI MIYAMOTO","埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET","第79回応用物理学会秋季学術講演会",,,,,"  19a-212B-5",2018,Sept.
"吉田匡廣,比嘉康貴,Nobuhiko Nishiyama,YASUYUKI MIYAMOTO,加木信行","測距用14xx-nm Eye-safe波長帯高出力エピタキシャルスタックパルスレーザ","電子情報通信学会エレクトロニクスソサエティ大会",,,,,"  C-4-5",2018,Sept.
"Y. Higa,M. Yoshida,N. Nishiyama,Y. Miyamoto,Nobuyuki Kagi","High Power, 14xx-nm Eye-safe, Epitaxially Stacked Pulse Laser for Detection and Ranging Applications","2018 IEEE International Semiconductor Laser Conference (ISLC)",,,,,"  WC7",2018,Sept.
"R. Aonuma,N. Kise,Y. Miyamoto","Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al2O3/ZrO2 for gate insulator","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,,"  PS-1-14",2018,Sept.
"Shinjiro Iwata,Kazumi Ohashi,Netsu Seikou,Koichi Fukuda,YASUYUKI MIYAMOTO","GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化","第76回応用物理学会秋季学術講演会",,,,,"  16a-1C-6",2018,Sept.
"W. Zhang,S. Netsu,T.Kanazawa,T. Amemiya,Y. Miyamoto","p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric","2018 International Conference on Solid State Devices and Materials (SSDM 2018)",,,,,"  M-7-03",2018,Sept.
"D. Nakajun,N. Kanai,R. F. T. Fathulah,H. Fujita,E. Yagyu,Y. Miyamoto","Multi-level inverter toward GaN HEMT monolithic integrated circuit","Les Eastman Conference 2018",,,,,"  IIIB-5",2018,Aug.
"Nanae Kanai,Kenichi Okada,Yasuyuki Miyamoto","Investigation of Active Load Matching Using GaN HEMT as Digital Switch","Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)",,,,,,2018,July
"Y.Miyamoto,T. Kanazawa,N. Kise,H. Kinoshita,Kazuto Ohsawa","Regrown Source / Drain in InGaAs Multi-Gate MOSFET","19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)",,,,,"  P2-32",2018,June
"YASUYUKI MIYAMOTO","The Potential of GaN HEMT on GaN Substrate","Nanotech Malaysia",,,,,,2018,May
"Toru Kanazawa,Kazuto Ohsawa,Tomohiro Amemiya,Nobukazu Kise,Ryosuke Aonuma,Yasuyuki Miyamoto","Fabrication of InGaAs Nanosheet Transistors with Regrown Source","Compound Semiconductor Week (CSW2018)",,,,,"  We3C3.2",2018,May
"Seiko Netsu,Toru Kanazawa,Teerayut Uwanno,Tomohiro Amemiya,Kosuke Nagashio,Yasuyuki Miyamoto","Type-II HfS2/MoS2 Heterojunction Transistors",,"IEICE Transactions on Electronics",,"Vol. E101-C","No. 5","pp. 338-342",2018,May
"Syougo Kunisada,Koichi Fukuda,YASUYUKI MIYAMOTO","GaAsSb/InGaAsダブルゲートTunnel FETにおける量子効果の検討‐正孔バンドの取り扱い","第65回応用物理学会春季学術講演会",,,,,"  18a-G203-7",2018,Mar.
"Nobukazu Kise,Ryousuke Aonuma,YASUYUKI MIYAMOTO","GaAsSb/InGaAsダブルゲートトンネルFETにおけるゲート金属形成プロセスの影響","第65回応用物理学会春季学術講演会",,,,,"  18p-C302-12",2018,Mar.
"Toru Kanazawa,Kazuto Ohsawa,Tomohiro Amemiya,Nobukazu Kise,Ryousuke Aonuma,YASUYUKI MIYAMOTO","InGaAsナノシートトランジスタの作製","第65回応用物理学会春季学術講演会",,,"  18a-G203-3",,,2018,Mar.
"S. Netsu,M. Hellenbrand,C. B. Zota,Y. Miyamoto,E. Lind","A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs",,"IEEE Journal of the Electron Devices Society",,"Vol. 6","  issue. 1","pp. 408-412 (2018).",2018,Feb.