"K. Makiyama,S. Yoshida,K. Nakata,Y. Miyamoto","Innovative RF Device Technologies for Advanced Information and Communications Network Society","IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium",,,,,,2022,Oct.
"Y. Ito,S. Tamai,T. Hoshi,Y. Miyamoto","GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers","2022 International Conference on Solid State Devices and Materials",,,,,,2022,Sept.
"Y. Miyamoto,K. Makiyama","Lateral thickness change of the high-k film on GaN HEMT for uniform electric field","14th Topical Workshop on Heterostructure Microelectronics, (TWHM 2022)",,,,,,2022,Aug.
"T. Gotow,T. Arai,T. Aota,Y. Miyamoto","Evaluation of TMAH treatment for isolation process of N-polar GaN HEMTs","Compound Semiconductor Week",,,,,,2022,June
"Takahiro Arai,Tomoya Aota,isao makabe,中田健,Takahiro Gotow,YASUYUKI MIYAMOTO","N極性GaN HEMTのTMAHによる素子分離","第69回応用物理学会春季学術講演会",,,,,,2022,Mar.
"YASUYUKI MIYAMOTO,Takahiro Gotow","GaN HEMTでの二次元電子ガスキャリヤ濃度と ゲートドレイン間リーク電流理論計算",,"電気学会論文誌C","電気学会","Vol. 142","No. 3","pp. 348-353",2022,Mar.