"Y. Miyamoto,N. Nishiyama,S. Suzuki","Electron beam lithography in processes for electron/opto/teraherz devices","35th International Microprocesses and Nanotechnology Conference",,,,,,2023,Nov.
"Y. Yamaguchi,K. Nakatani,S. Shinjo,T. Oishi,Y. Miyamoto","Trapping Compensation for Transient Recovery in GaN LNAs",,"IEEE Transactions on Microwave Theory and Techniques",,"vol. 72","no. 7","pp. 4006-4016",2023,Nov.
"R. Xu,J. Fan,M. Arai,Y. Miyamoto","GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowth","International Conference on Solid State Devices and Materials",,,,,,2023,Sept.
"Y. Miyamoto,M. Honjyo,K. Fukuda","Calculation of pnp GaInSb pnp lateral HBT for Complementary Bipolar Logic Technolog","International Conference on Solid State Devices and Materials",,,,,,2023,Sept.
"Y. Yamaguchi,K. Kudara,S. Shinjo,K. Yamanaka,Y. Miyamoto","A Distributed Model with a High Scaling Accuracy for GaN HEMTs Up to 100 GHz","IEEE International Symposium on Radio-Frequency Integration Technology (RFIT",,,,,,2023,Aug.
"Y. Miyamoto,K. Makiyama","Electric field modulation in the channel by lateral thickness distribution of high-k films formed on GaN HEMTs to improve breakdown voltage",,"IEEE Trans Electon. Dev.",,"vol. 70","no. 5","pp. 2210-2215",2023,Mar.
"J. Kotani,K. Makiyama,T. Ohki,S. Ozaki,N. Okamoto,Y. Minoura,M. Sato,N. Nakamura,Y. Miyamoto","High-Power-Density InAlGaN/GaN HEMT using InGaN back barrier for W-band amplifiers",,"ELECTRON. LETT.",,"vol. 59","no. 4","  e12715",2023,Feb.
"Y. Ito,S. Tamai,T. Hoshi,T. Gotow,Y. Miyamoto","Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers",,"JPN. J. APPL. PHYS.",,"vol. 62","no. SC","  SC1048",2023,Feb.