"Masahiro Watanabe,Naoyuki Shigyo,Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Katsumi Satoh,Tomoko Matsudai,Takuya Saraya,Toshihiko Takakura,Kazuo Itou,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Iriya Muneta,Hitoshi Wakabayashi,Akira Nakajima,Shin-ichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs","“dŽq�î•ñ’Ê�MŠw‰ï SDM(ƒVƒŠƒRƒ“�Þ—¿�EƒfƒoƒCƒX)Œ¤‹†‰ï","“dŽq�î•ñ’Ê�MŠw‰ï‹Z�pŒ¤‹†•ñ�� = IEICE technical report : �MŠw‹Z•ñ","“dŽq�î•ñ’Ê�MŠw‰ï","Vol. 119","No. 273","pp. 45-48",2019,Nov.
"Yoshiro Kumagai,Satoshi Fukuyama,Hiroki Tonegawa,Kizashi Mikami,Kodai Hirose,Kanta Tomizawa,Keisuke Ichikawa,Masahiro Watanabe","Negative Differential Resistance in CaF<sub>2</sub>/Si Double Barrier Resonant Tunneling Diodes via Plasma Etching Mesa Isolation process","32nd International Microprocesses and Nanotechnology Conference (MNC2019)",,"The Japan Society of Applied Physics",,,,2019,Oct.
"T. Hiramoto,T. Saraya,K. Itou,T. Takakura,M. Fukui,S. Suzuki,K. Takeuchi,M. Tsukuda,Y. Numasawa,K. Satoh,T. Matsudai,W. Saito,K. Kakushima,T. Hoshii,K. Furukawa,M. Watanabe,N. Shigyo,H. Wakabayashi,K. Tsutsui,H. Iwai,A. Ogura,S. Nishizawa,I. Omura,H. Ohash","Switching of 3300V Scaled IGBT by 5V Gate Drive","ASICON (International Conference on ASIC)",,,,,,2019,Oct.
"Koudai Hirose,Yoshiro Kumagai,Hiroki Tonegawa,Kanta Tomizawa,Takumi Kaneko,Honami Sato,Masahiro Watanabe","Room Temperature Negative Differential Resistance of Si/CaF<sub>2</sub> Bipolar Double-barrier Resonant Tunneling Diodes","The 80th Autumn Meeting of The Jpn. Soc. of Appl. Phys.",,"The Japan Society of Applied Physics",,,"p. 12-343",2019,Sept.
"Kizashi Mikami,Yoshiro Kumagai,Koudai Hirose,Kanta Tomizawa,Hiroki Tonegawa,Takumi Kaneko,Honami Sato,Masahiro Watanabe","Room temperature negative differential resistance of p-type resonant tunneling diodes using atomically thin CaF<sub>2</sub>/Si heterostructures","The 80th Autumn Meeting of The Jpn. Soc. of Appl. Phys.",,"The Japan Society of Applied Physics",,,"p. 12-342",2019,Sept.
"Kanta Tomizawa,Yoshiro Kumagai,Hiroki Tonegawa,Kizashi Mikami,Koudai Hirose,Takumi Kaneko,Honami Sato,Masahiro Watanabe","Room temperature negative differential resistance of CaF<sub>2</sub>/Si/SiO<sub>2</sub> double-barrier resonant tunneling diodes","The 80th Autumn Meeting of The Jpn. Soc. of Appl. Phys.",,"The Japan Society of Applied Physics",,,"p. 12-341",2019,Sept.
"Hiroki Tonegawa,Yoshiro Kumagai,Kizashi Mikami,Koudai Hirose,Kanta Tomizawa,Takumi Kaneko,Honami Sato,Masahiro Watanabe","Room temperature negative differential resistance of Si/CaF<sub>2</sub> triple-barrier resonant tunneling diodes with high peak current density","The 80th Autumn Meeting of The Jpn. Soc. Of Appl. Phys.",,"The Japan Society of Applied Physics",,,"p. 12-340",2019,Sept.
"Long Liu,Soichiro Ono,Gensai Tei,Masahiro Watanabe","Design, fabrication, and evaluation of waveguide structure for Si/CaF<sub>2</sub> quantum-well intersubband transition lasers","The 2019 International Conference on Solid State Devices and Materials",,,,,,2019,Sept.
"Gensai Tei,Long Liu,Yohei Koyanagi,Masahiro Watanabe","Fabrication process of near-infrared wavelength quantum cascade laser using CaF<sub>2</sub>/Si heterostructures","The 80th Autumn Meeting of The Jpn. Soc. of Appl. Phys.",,"The Japan Society of Applied Physics",,,"p. 12-344",2019,Sept.
"�X‰® ‘ñ�Æ,ˆÉ“¡ ˆê•v,�‚‘q �r•F,•Ÿˆä �@—˜,—é–Ø �Tˆê,’|“à Œ‰,•�“c �³‘¥,�À‘ò —zˆê˜Y,�²“¡ �ŽŒÈ,––‘ã ’mŽq,âV“¡ �Â,Kuniyuki KAKUSHIMA,Takuya Hoshii,ŒÃ�ì ˜a—R,MASAHIRO WATANABE,Ž·�s ’¼”V,KAZUO TSUTSUI,HIROSHI IWAI,�¬–¸ ŒúŽu,�¼àV �Lˆê,‘呺 ˆê˜Y,‘å‹´ �O’Ê,•½–{ �r˜Y","5VƒQ�[ƒg‹ì“®1200V‹‰ƒXƒP�[ƒŠƒ“ƒOIGBT‚Ì“®�ìŽÀ�؂ƃXƒCƒbƒ`ƒ“ƒO‘¹Ž¸‚̒ጸ (ƒVƒŠƒRƒ“�Þ—¿�EƒfƒoƒCƒX)",,"“dŽq�î•ñ’Ê�MŠw‰ï‹Z�pŒ¤‹†•ñ�� = IEICE technical report : �MŠw‹Z•ñ","“dŽq�î•ñ’Ê�MŠw‰ï","Vol. 118","No. 429","pp. 39-44",2019,Aug.
"Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Masanori Tsukuda,Yohichiroh Numasawa,Katsumi Satoh,Tomoko Matsudai,Wataru Saito,Kuniyuki Kakushima,Takuya Hoshii,Kazuyoshi Furukawa,Masahiro Watanabe,Naoyuki Shigyo,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Atsushi Ogura,Shin-Ichi Nishizawa,Ichiro Omura,Hiromichi Ohashi,Toshiro Hiramo","3300V Scaled IGBTs Driven by 5V Gate Voltag","31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019)",,,,,,2019,May
"Masahiro Watanabe,Naoyuki Shigyo,Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Katsumi Satoh,Tomoko Matsudai,Takuya Saraya,Toshihiro Takakura,Kazuo Itou,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Iriya Muneta,Hitoshi Wakabayashi,Akira Nakajima,Shin-ichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs","31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019)",,,,,,2019,May
"Kizashi Mikami,Satoshi Fukuyama,Masahiro Watanabe","Room Temperature Negative Differential Resistance of Si/CaF<sub>2</sub> Double-barrier Resonant Tunneling Diodes","The 66th The Japan Society of Applied Physics Spring Meeting",,"‰ž—p•¨—�Šw‰ï",,,"p. 11-192",2019,Mar.
"Gensai Tei,Soichiro Ono,Liu Long,Masahiro Watanabe","Analysis of near-infrared wavelength quantum cascade laser using CaF<sub>2</sub>/Si heterostructures","The 66th The Japan Society of Applied Physics Spring Meeting",,"‰ž—p•¨—�Šw‰ï",,,"p. 11-427",2019,Mar.
"Kensuke Ichikawa,Hiroki Tonegawa,Koudai Hirose,Kizashi Mikami,Satoshi Fukuyama,Yoshiro Kumagai,Masahiro Watanabe","Theoretical analysis of multiple-barrier silicon/fluoride heterostructure resonant tunneling diodes with metal emitter","The 66th The Japan Society of Applied Physics Spring Meeting",,"‰ž—p•¨—�Šw‰ï",,,"p. 11-191",2019,Mar.