"M. Watanabe,Y. Iketani,M. Asada","Epitaxial Growth and Electrical Characteristics of CaF<sub>2</sub>/Si/CaF<sub>2</sub> Resonant Tunneling Diode Structures Grown on Si(111) 1°-off Substrate",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 10A","pp. L964-L967",2000,Oct.
"M. Watanabe,Y. Iketani,M. Asada","Characteristics of Epitaxial Si/CaF<sub>2</sub> Resonant Tunneling Diodes Grown on Si(111) 1° off Substrate","2000 IEEE Silicon Nanoelectronics Workshop",,,"  5-6",,"  63-64",2000,June
"Y. Iketani,M. Watanabe,M. Asada","Fabrication and characterization of Si/CaF<sub>2</sub> double barrier resonant tunneling diode on Si(111) 1°off substrate","The 47th Spring Meeting of The Jpn. Soc. Of Appl. Phys. And Related Societies",,,"  30a-YD-8","  3","  1340",2000,Mar.
"M. Watanabe,M. Tsutsui,M. Asada","Resonant Tunneling Diode Silicon Substrate using Si-CaF<sub>2</sub> and CdF<sub>2</sub>-CaF<sub>2</sub> Heterostructures","電子情報通信学会（電子デバイス研究会）",,,"  ED99-316","  SDM99-209","  73-78",2000,Feb.
"M.Asada,Y.Oguma,N.Sashinaka","Estimation of interwell terahertz gain by photon-assisted tunneling measurement in triple-barrier resonant tunneling diodes",,"Appl.Phys.Lett.",,"Vol. 77","No. 5","pp. 618-620",2000,
"M.Watanabe,Y.Iketani,M.Asada","Epitaxial growth and electrical characteristics of CaF2/Si/CaF2 resonant tunneling diode structure grown on Si(111) 1-degree-off substrate",,"Japan.J.Appl.Phys.",,"Vol. 39","No. 10A","pp. L964-L967",2000,
"A.Itoh,M.Saitoh,M.Asada","A 25-nm-long channel metal-gate p-type Schottky source/drain metal-oxide-semiconductor field effect transistor on SIMOX substrate",,"Japan.J.Appl.Phys.",,"Vol. 39","No. 8","pp. 4757-4758",2000,
"N.Sashinaka,Y.Oguma,M.Asada","Observation of terahertz photon-assisted tunneling in triple-barrier resonant tunneling diodes integrated with patch antenna",,"Japan.J.Appl.Phys.",,"Vol. 39","No. 8","pp. 4899-4903",2000,