"S. Yamamoto,Yusuke Shuto,Satoshi Sugahara","Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop","International Symposium on Silicon Nano Devices in 2030",,,,,"  P-50",2009,Oct.
"Y. Shuto,S. Yamamoto,S. Sugahara","Analysis and design of nonvolatile SRAM using spintronics technology","Non-volatile Memory Technology Symposium 2009 (NVMTS09)",,,,,"  paper P7",2009,Oct.
"Y. Shuto,R. Nakane,H. Sukegawa,S. Yamamoto,M. Tanaka,K. Inomata,S. Sugahara","Fabrication and characterization of pseudo-spin-MOSFETs","Intl. Conf. Silicon Nano Devices in 2030",,,,"  paper P-49","pp. 148-149",2009,Oct.
"Shuu'ichirou Yamamoto,SATOSHI SUGAHARA","擬似スピンMOSFETを用いた不揮発性DFF：バルーンDFFとの比較","第70回応用物理学会学術講演会",,,"  10a-TA-6","  II分冊","p. 790",2009,Sept.
"Shuu'ichirou Yamamoto,SATOSHI SUGAHARA,Hideo Maejima","マイクロプロセッサにおけるエマージングメモリデバイスへの期待","第70回応用物理学会学術講演会",,,"  9p-TA-4","  0分冊","p. 53",2009,Sept.
"Shuu’ichirou.Yamamoto,Yusuke Shuto,Satoshi Sugahara","Nonvolatile SRAM(NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices","Proceedings of IEEE 2009 Custom Integrated Circuits Conference (CICC)",,,,,"pp. 531-534",2009,Sept.
"Yusuke Shuto,Shuu'ichirou Yamamoto,SATOSHI SUGAHARA","擬似スピンMOSFETを用いた不揮発性SRAM：電源遮断動作消費電力の評価","平成21年秋季 第70回応用物理学会学術講演会",,,,,"  paper 10a-TA-5",2009,Sept.
"Yusuke Shuto,Shuu'ichirou Yamamoto,SATOSHI SUGAHARA","Spin-RAM/ReRAM技術を用いた機能MOSFETとその不揮発性SRAM/フリップフロップへの応用","平成21年秋季 第70回応用物理学会学術講演会",,,,,"  paper 9p-TA-8",2009,Sept.
"SATOSHI SUGAHARA,Yusuke Shuto,Shuu'ichirou Yamamoto","スピン機能MOSFETによる不揮発性ロック 不揮発性パワーゲーティング・ロジックへの応用 不揮発性SRAM/フリップフロップの可能性を検証",,"Semiconductor FPD World",,,,"pp. 46-49",2009,Sept.
"Yasuo Miyake,Shuu'ichirou Yamamoto,Hideo Maejima","マスタ・スレーブ型マルチプロセッサにおける動的可変優先度バス制御方式とその評価",,"電子情報通信学会論文誌",,"Vol. J92-C","No. 5","pp. 166-175",2009,May
"Y. Shuto,S. Yamamoto,S. Sugahara","Analysis and Design of Nonvolatile SRAM Using MOSFET-Based Spin-Transistors","Intermag 2009",,,,"  paper CT-02","p. 195",2009,May
"Shuu’ichirou Yamamoto,Satoshi Sugahara","Nonvolatile delay flip-flop using magnetic tunnel junctions with current-induced magnetization switching architecture","IEEE International Magnetics Conference",,,,,"  ET-01",2009,May
"Shuu'ichirou Yamamoto,SATOSHI SUGAHARA","スピン注入磁化反転MTJを用いた不揮発性Dフリップフロップ","第56回応用物理学関係連合講演会","第56回応用物理学関係連合講演会予稿集",,"Vol. 2",,"p. 785 1p-TB-6",2009,Apr.
"Shuu'ichirou Yamamoto,Satoshi Sugahara","Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology",,"Jpn. J. Appl. Phys.",,"Vol. 48","No. 4","pp. 043001-1-7",2009,Apr.
"Shuu'ichirou Yamamoto,SATOSHI SUGAHARA","ノンポーラ型抵抗変化素子のSPICEモデル","第56回応用物理学関連連合講演会","第56回応用物理学関連連合講演会予稿集",,,,"  paper 2a-P16-13",2009,Mar.
"SATOSHI SUGAHARA,周藤悠介,Shuu'ichirou Yamamoto","抵抗変化素子を用いたFunctional MOSFET/CMOS","第56回応用物理学関連連合講演会",,,,,"  paper 2a-P16-14",2009,Mar.
"Shuu'ichirou Yamamoto,周藤悠介,SATOSHI SUGAHARA","ノンポーラ型抵抗変化素子を用いた不揮発性SRAM","第56回応用物理学関連連合講演会",,,,,"  paper 2a-P16-15",2009,Mar.
"周藤悠介,Shuu'ichirou Yamamoto,SATOSHI SUGAHARA","Pseudo-spin-MOSFETを用いた不揮発性SRAM：情報ストア動作解析","第56回応用物理学関連連合講演会",,,,,"  paper 1p-TB-8",2009,Mar.
"周藤悠介,Shuu'ichirou Yamamoto,SATOSHI SUGAHARA","擬似スピンMOSFETを用いた不揮発性SRAMの提案と解析","第13回半導体スピン工学の基礎と応用(PASPS-13)",,,,"  paper E-4","p. 42",2009,Jan.
"Y. Shuto,S. Yamamoto,S. Sugahara","Variability-Tolerant CMOS Gates Using Functional MOSFETs with Resistive Switching Devices","Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials",,,,,"pp. 810-811",2009,
"S. Yamamoto,S. Sugahara","Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture",,"Jpn. J. Appl. Phys.",,"vol. 48","no. 4","pp. 043001/1-7",2009,
"Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara","Nonvolatile SRAM architecture using MOSFET-based spin-transistors",,"J. Appl. Phys.",,"Vol. 105",,"pp. 07C933/1-3",2009,
"Shuu'ichirou Yamamoto,Yusuke Shuto,SATOSHI SUGAHARA","スピン機能CMOSによる不揮発性高機能・高性能ロジック",,"スピントロニクスの基礎と材料・応用技術の最前線","シーエムシー出版",,"  27章","pp. 319-330",2009,