"Miyuki Kouda,Takamasa Kawanago,Ahmet Parhat,KENJI NATORI,takeo hattori,HIROSHI IWAI","Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices",,"Journal of Vacuum Science and Technology B",,"Vol. 29","No. 6","pp. 062202-1-4",2011,Nov.
"“c’† —SŽχ,Takamasa Kawanago,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","ƒVƒŠƒRƒ“Šξ”γ‚ɑ͐ς΅‚½ƒiƒmƒJ[ƒ{ƒ“”––Œ‚ւ̍‚‰·’ZŽžŠΤƒAƒj[ƒŠƒ“ƒO‚Μ‰e‹Ώ","‘ζ72‰ρ‰ž—p•¨—Šw‰οŠwpu‰‰‰ο",,,,,,2011,
"Ahmet Parhat,—ˆŽR‘ε—S,‹ΰ“c—ƒ,—ι–Ψ ‘ρ–η,Tomotsune Koyanagi,Miyuki Kouda,ƒ}ƒCƒ}ƒCƒeƒB ƒ}ƒCƒ}ƒCƒeƒBƒŒƒƒƒAƒeƒB,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Effects of Metal Layer Insertion on EOT scaling in TiN/Metal/ La2O3 Si High ?k Gate Stacks",",219th ECS Meeting",,,,,,2011,
"Ahmet Parhat,—ˆŽR‘ε—S,‹ΰ“c—ƒ,—ι–Ψ ‘ρ–η,Tomotsune Koyanagi,Miyuki Kouda,ƒ}ƒCƒ}ƒCƒeƒB ƒ}ƒCƒ}ƒCƒeƒBƒŒƒƒƒAƒeƒB,Takamasa Kawanago,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","TiN/W/La2O3 /Si High-k Gate Stack for EOT below o.5nm","CSTIC2011",,,,,,2011,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","Metal Inserted Poly-Si Stacks with La2O3 Gate Dielectrics for Scaled EOT and VFB Control by Oxygen Incorporation","CSTIC2011",,,,,,2011,
"Takamasa Kawanago,—ι–Ψ ‘ρ–η,Kuniyuki KAKUSHIMA,Ahmet Parhat,KAZUO TSUTSUI,ΌŽR²,Nobuyuki Sugii,KENJI NATORI,takeo hattori,HIROSHI IWAI","An effective process for oxygen defect suppression for La-based oxide gate dielectric","Taiwan-Japan Workshop on gNano Devicesh",,,,,,2011,