"N. Nishizawa,T. Kawanago,K. Kakushima,H. Munekata","Formation of Ultra-thin, Crystalline AlOx Tunnel Barrier on GaAs and Vice Versa","18th International Conference on Molecular Beam Epitaxy","Abstracts",,,,"p. 44",2014,Sept.
""T. Kawanago","K. Kakushima","Y. Kataoka","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","K. Natori","H. Iwai"","Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT",,"IEEE Transaction on Electron Devices(T-ED)",,"Vol. 61","No. 3","pp. 785-791",2014,Feb.
"雷 一鳴,Shu Munekiyo,Kuniyuki KAKUSHIMA,Takamasa Kawanago,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI,古橋 壮之,三浦 成久,山川 聡","ATR-FTIR法を用いた熱処理によるLa2O3/SiC界面反応の解析","第61回応用物理学会春季学術講演会",,,,,,2014,
"Xihao Tan,Takamasa Kawanago,Kuniyuki KAKUSHIMA,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","高電圧ストレスによるAlGaN/GaNの界面とバルクトラップの測定に関する研究","第61回応用物理学会春季学術講演会",,,,,,2014,
"雷 一鳴,Shu Munekiyo,Kuniyuki KAKUSHIMA,Takamasa Kawanago,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI,M. Furuhashi,N. Miura,S. Yamakawa","Interface reaction analysis of La2O3/SiC upon annealing by ATR-FTIR","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39, February 7, 2014, Suzukake Hall, Suzukakedai Campus, Tokyo Institute of Technology, Japan",,,,,,2014,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT,","The Workshop on Future Trend of Nanoelectronics:WIMNACT 39",,,,,,2014,