"Junghwan Kim,Koji Yamamoto,Soshi Iimura,Shigenori Ueda,Hideo Hosono","Electron Affinity Control of Amorphous Oxide Semiconductors and Its Applicability to Organic Electronics",,"Advanced Materials Interfaces","Wiley","Vol. 5","No. 23","p. 1801307",2018,Dec.
"Biao Wan,Yangfan Lu,Zewen Xiao,Yoshinori Muraba,Junghwan Kim,Dajian Huang,Lailei Wu,Huiyang Gou,Jingwu Zhang,Faming Gao,Ho-kwang Mao,HIDEO HOSONO","Identifying quasi-2D and 1D electrides in yttrium and scandium chlorides via geometrical identification",,"npj Comput. Matter",,"Vol. 4","No. 77",,2018,Dec.
"渡邊脩人,井手啓介,片瀬貴義,笹瀬雅人,戸田喜丈,金正煥,上田茂典,堀場弘司,組頭広志,平松秀典,細野秀雄,神谷利夫","アモルファス酸化物半導体をホストとする蛍光体を用いた直流駆動型発光素子の室温形成","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"井手啓介,二角勇毅,渡邉脩人,金正煥,片瀬貴義,平松秀典,細野秀雄,神谷利夫","Cr添加アモルファス酸化ガリウム薄膜のフォトルミネッセンス特性","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"西間木祐紀,井手啓介,渡邊脩人,金正煥,片瀬貴義,平松秀典,細野秀雄,神谷利夫","希土類添加アモルファス酸化物半導体の電気物性とトランジスタ特性","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"Junghwan kim,Hideo Hosono","Development of Ultra-Wide Bandgap Amorphous Oxide Semiconductors for Future Electronics","AiMES 2018","Meeting Abstracts. The Electrochemical Society",,,"No. 36","pp. 1205-1205",2018,Sept.
"Taehwan Jun,Kihyung Sim,Soshi Iimura,Masato Sasase,Hayato Kamioka,Junghwan Kim,Hideo Hosono","Lead-Free Highly Efficient Blue-Emitting Cs3Cu2I5 with 0D Electronic Structure",,"Advanced Materials","Wiley","Vol. 30","No. 43","p. 1804547",2018,Sept.
"Joonho Bang,Satoru Matsuishi,Junghwan Kim,Hideo Hosono","Hydrogen Anion and Subgap States in Amorphous In?Ga?Zn?O Thin Films","International Meeting on Information Display (IMID)","IMID 2018 DIGEST",,,,"p. 84",2018,Aug.
"Keisuke Ide,Yuki Futakado,Naoto Watanabe,Junghwan Kim,Takayoshi Katase,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide",,"Phys. Status Solidi A",,"  216",,"  1800198",2018,Aug.
"Taehwan Jun,Kota Aoyama,Joonho Bang,Junghwan Kim,Hideo Hosono","Solution-Processable P-type Transparent Amorphous Semiconductor for Flexible Electronics","AM-FPD 2018","AM-FPD 2018, IEEE",,,,"pp. 1-2",2018,July
"Junghwan Kim,Taehwan Jun,Hideo Hosono","New P‐type Amorphous Semiconductor with High Transparency and High Mobility of 9 cm2/Vs for Next‐Generation Displays","Society for Information Display (SID)","SID international symposium digest of technical papers","Wiley","Vol. 49",,"pp. 236-238",2018,May
"Hongsheng Yang,Junghwan Kim,Koji Yamamoto,Xing Xing,Hideo Hosono","Surface tailoring of newly developed amorphous Zn-Si-O thin films as electron injection/transport layer by plasma treatment: Application to inverted OLEDs and hybrid solar cells",,"Applied Surface Science",,"Vol. 434",,"pp. 995-1000",2018,Mar.
"Taehwan Jun,Junghwan Kim,Hideo Hosono","Transparent Amorphous p-type Semiconductor with High Mobility (~9 cm2/Vs), Cu-Sn-I: Utilization of I 5p orbital as Pseudo Extended s-orbital","The 65th Spring Meeting",,,,,,2018,Mar.
"Koji Yamamoto,Junghwan Kim,HIDEO HOSONO","Development of New Amorphous Oxide Semiconductors with Deep Conduction Band Minimum and Their OLED Application","The 65th Spring Meeting",,,,,,2018,Mar.
"Taehwan Jun,Junghwan Kim,Masato Sasase,Hideo Hosono","Material Design of p-Type Transparent Amorphous Semiconductor, Cu?Sn?I",,"Advanced Materials","Wiley","Vol. 30","No. 12","  1706573",2018,Mar.
"Nobuhiro Nakamura,Junghwan Kim,Hideo Hosono","Material Design of Transparent Oxide Semiconductors for Organic Electronics: Why Do Zinc Silicate Thin Films Have Exceptional Properties?",,"Advanced Electronic Materials","Wiley","Vol. 4","No. 2","p. 1700352",2018,Feb.
"二角勇毅,渡邉脩人,井手啓介,金正煥,片瀬貴義,平松秀典,細野秀雄,神谷利夫","遷移金属元素を発光中心としたアモルファス酸化物半導体蛍光体薄膜の探索","第56回 セラミックス基礎科学討論会",,,,,,2018,Jan.