"Kotaro Natori,Tatsuhiro Ogawa,Takuya Hoshii,Tomohiro Matsushia,Takayuki Muro,Toyohiko Kinoshita,Yoshitada Morikawa,Kuniyuki Kakushima,Fumihiko Matsui,Kouichi Hayashi,Hitoshi Wakabayashi,Kazuo Tsutsui","Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography","11th Int. Symp. on Atomic Level Characterization (ALC'17)",,,,,,2017,Dec.
"Suguru Tatsunokuchi,Iriya Muneta,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Kuniyuki Kakushima","Photovoltaic Properties of Lateral Si Nano Wall Solar Cells","2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Tecnology (IWDTF 2017)",,,,,,2017,Nov.
"KAZUO TSUTSUI,Kuniyuki KAKUSHIMA,Takuya Hoshii,中島 昭,西澤 伸一,Hitoshi Wakabayashi,Iriya Muneta,佐藤 克己,末代 知子,齋藤 渉,更屋 拓哉,伊藤 一夫,福井 宗利,鈴木 慎一,小林 正治,高倉 俊彦,平本 俊郎,小椋 厚志,沼沢 陽一郎,大村 一郎,大橋 弘通,HIROSHI IWAI","三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術)",,"電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan","電気学会","Vol. 2017","No. 74","pp. 1-6",2017,Nov.
"Kazuo Tsutsui,Tomohiro Matsushita,Kotaro Natori,Takayuki Muro,Yoshitada Morikawa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography",,"Nano Letters",,"Vol. 17",,"pp. 7533-7538",2017,Nov.
"M. Toyama,T. Ohashi,K. Matsuura,J. Shimizu,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing","Advanced Metallization Conference 2017: 27th Asian Session",,,,,,2017,Oct.
"K. Tsutsui,K. Kakushima,T. Hoshii,A. Nakajima,S. Nishizawa,H. Wakabayashi,I. Muneta,K. Sato,T. Matsudai,W. Saito,T. Saraya,K. Itou,M. Fukui,S. Suzuki,M. Kobayashi,T. Takakura,T. Hiramoto,A. Ogura,Y. Numasawa,I. Omura,H. Ohashi,H. Iwai","3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat)","ASICON2017","Proceedings of International Conference on ASIC",,"Vol. 2017-October",,"pp. 1137-1140",2017,Oct.
"N. Hayakawa,I. Muneta,T. Ohashi,K. Matsuura,J. Shimizu,K. Kakushima,K. Tsutsui,H. Wakabayashi","Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure","International Conference on Solid State Devices and Materials",,,,,,2017,Sept.
"Takuya Hoshii,Rumi Takayama,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate","International Conference on Solid-State Devices and Materials (SSDM2017)",,,,,,2017,Sept.
"S. Hirano,J. Shimizu,K. Matsuura,T. Ohashi,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films","2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)","2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)",,,,"pp. 234-235",2017,June
""K. Kakushima","T. Seki","H. Wakabayashi","K. Tsutsui","H. Iwai"","Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates",,"Vacuum",,"Vol. 149",,"pp. 14-18",2017,June
"J. Shimizu,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,N. Ikarashi,H. Wakabayashi","Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET","IEEE Electron Device Technology and Manufacturing Conference (EDTM)","2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)",,,,"pp. 222-223",2017,June
"K. Kakushima,Yuta Ikeuchi,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,T. Kikuchi,S. Ishikawa","Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes","Int. Workshop on Junction Technology (IWJT2017)",,,,,,2017,June
"K. Kakushima,T. Suzuki,T. Hoshii,I. Muneta,H. Wakabayashi,HIROSHI IWAI,Y. Aoki,H. Nohira Aoki,KAZUO TSUTSUI","Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes","Int. Workshop on Junction Technology (IWJT2017)",,,,,,2017,June
"Yasunori Okada,Shimpei Yamaguchi,Takumi Ohashi,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas","International Workshop on Junction Technology",,,,,,2017,June
"Mayato Toyama,Takumi Ohashi,Kentaro Matsuura,Junnichi Shimizu,Iriya Muneta,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Hitoshi Wakabayashi","スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性","64th JSAP Spring meeting",,,,,,2017,Mar.
"Takeaki Shinohara,Iriya Muneta,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Hitoshi Wakabayashi","nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製","64th JSAP Spring meeting",,,,,,2017,Mar.
"Suguru Tatsunokuchi,Takuya Hoshii,Iriya Muneta,Hitoshi Wakabayashi,KAZUO TSUTSUI,HIROSHI IWAI,Kuniyuki KAKUSHIMA","横型Siナノウォール太陽電池の発電特性に関する検討","64th JSAP Spring meeting",,,,,,2017,Mar.
"Naoki Hayakawa,Iriya Muneta,Takumi Ohashi,Kentaro Matsuura,Junnichi Shimizu,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Hitoshi Wakabayashi","トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性","64th JSAP Spring meeting",,,,,,2017,Mar.
"Takumi Ohashi,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness",,"Applied Physics Express","IOP Publishing","Vol. 10",,,2017,Mar.
"Ohno, H.,Yamamoto, M.,Endoh, T.,Ando, Y.,Hanyu, T.,Itoh, K.M.,Tanaka, M.,Mitani, S.,Hitoshi Wakabayashi","FOREWORD: Spintronics materials and devices for working memory technology",,"Japanese Journal of Applied Physics",,"Vol. 56","No. 8",,2017,
""Jun’ichi Shimizu","Takumi Ohashi","Kentaro Matsuura","Iriya Muneta","Kuniyuki Kakushima","Kazuo Tsutsui","Hitoshi Wakabayashi"","High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 56","No. 4S",,2017,
"Y. Hibino,S. Ishihara,N. Sawamoto,T. Ohashi,K. Matsuura,H. Machida,H. Wakabayashi,A. Ogura","Band gap-tuned MoS2(1-x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process",,"Journal of Materials Research",,"Vol. 32","No. 16",,2017,
"S. Ishihara,Y. Hibino,N. Sawamoto,T. Ohashi,K. Matsuura,H. Machida,M. Ishikawa,H. Sudo,H. Wakabayashi,A. Ogura","Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor",,"MRS Advances",,"Vol. 2","No. 29",,2017,
"Y. Hibino,S. Ishihara,N. Sawamoto,T. Ohashi,K. Matsuura,H. Machida,M. Ishikawa,H. Sudo,H. Wakabayashi,A. Ogura","Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition",,"MRS Advances",,"Vol. 2","No. 29",,2017,
"Okada, Y.,Yamaguchi, S.,Ohashi, T.,Muneta, I.,Kasushima, K.,Tsutsui, K.,Hitoshi Wakabayashi","Resistivity reduction of low-carrier-density sputtered-MoS2film using fluorine gas",,"17th International Workshop on Junction Technology, IWJT 2017",,,,"pp. 44-46",2017,