"Netsu Seikou,Toru Kanazawa,Tomohiro Amemiya,YASUYUKI MIYAMOTO","HfS2/MoS2 ヘテロジャンクションの温度依存電流特性","第78回応用物理学会秋季学術講演会",,,,"No. 7p-C11-16",,2017,Sept.
"Seiko Netsu,Toru Kanazawa,Vikrant Upadhyaya,Teerayut Uwanno,Tomohiro Amemiya,Kosuke Nagashio,Yasuyuki Miyamoto","Type II HfS2/MoS2 heterojunction Tunnel FET","12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)",,,,"No. 6-3",,2017,Aug.
"Kazuto Ohsawa,Shinji Noguchi,Netsu Seikou,Nobukazu Kise,YASUYUKI MIYAMOTO","[16p-413-11] HfO2/Al2O3/InGaAsゲート構造をもつMOSFETの移動度のH2アニール後における成膜温度およびAl2O3膜厚依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"Toru Kanazawa,Tomohiro Amemiya,Netsu Seikou,Vikrant Upadhyaya,Koichi Fukuda,YASUYUKI MIYAMOTO","HfS2系トンネルトランジスタのデバイスシミュレーション","第64回応用物理学会春季学術講演会",,,,,"  16a-F203-3",2017,Mar.
"K. Ohsawa,S. Netsu,N. Kise,S. Noguchi,Y. Miyamoto","Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks",,"Jpn. J. Appl. Phys.",,"vol. 56","no. 4S","  04CG05 2017",2017,Mar.
"Netsu Seikou,Toru Kanazawa,Vikrant Upadhyaya,ウワンノー ティーラユット,Tomohiro Amemiya,長汐 晃輔,YASUYUKI MIYAMOTO","Type II 型 HfS2/MoS2ヘテロジャンクションを有するTFET","第64回応用物理学会春季学術講演会",,,,,"  16a-F203-4",2017,Mar.
"Kazuto Ohsawa,Shinji Noguchi,Netsu Seikou,Nobukazu Kise,YASUYUKI MIYAMOTO","HfO2/Al2O3/InGaAsゲート構造における移動度への成膜温度およびH2アニールの影響","電子情報通信学会電子デバイス研究会","信学技報",,"vol. 116","no. 431","pp. 35-40",2017,Jan.