"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Makoto Hagiwara,Takahiro Urakabe,Shigeki Harada","Automated Flexible Modeling for Various Full-SiC Power Modules",,"IEEE Transactions on Power Electronics","IEEE","Vol. 38","Issue 5","pp. 6094-6107",2023,May
"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Kenji Hatori,Ryo Tsuda,Hitoshi Uemura,Makoto Hagiwara,Takahiro Urakabe","Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching",,"IEEE Transactions on Industry Applications","IEEE","Vol. 58","No. 3","pp. 2978-2986",2022,May
"Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Kenji Hatori,Ryo Tsuda,Hitoshi Uemura,Makoto Hagiwara,Takahiro Urakabe","Investigation of Full SiC Power Modules for More Electric Aircraft with Focus on FIT Rate and High Frequency Switching","2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia)",,,,,,2021,July
"Junichi Nakashima,Takeshi Horiguchi,takahiro urakabe,Makoto Hagiwara","SiC-MOSFET, GaN-HEMTに適用可能なユニバーサルデバイスモデルの開発","令和3年電気学会全国大会",,,,"  4-001","pp. 1-2",2021,Mar.
"Kazuki Ushijima,Masaki Kuzumoto,Makoto Hagiwara,Fei Teng,Yuuki Ishii,Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Takushi Jimichi","6.5 kV耐圧SiC-MOSFETのデバイスモデルを用いた並列駆動動作に関する一検討","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,"  SPC-20-048",2020,Jan.
"Fei Teng,Masaki Kuzumoto,Makoto Hagiwara,Yuuki Ishii,Junichi Nakashima,Takeshi Horiguchi,Yasushige Mukunoki,Takushi Jimichi","6.5kV耐圧SiC-MOSFETのデバイスモデル開発","電気学会研究会資料. SPC, 半導体電力変換研究会",,,,,"  SPC-19-068",2019,Oct.
"Fei Teng,Masaki Kuzumoto,Makoto Hagiwara,Yuuki Ishii,Junichi Nakashima,Yasushige Mukunoki,Takeshi Horiguchi","6.5kV耐圧SiC-MOSFETの出力特性モデリング","平成31年電気学会全国大会",,,,"  4-013","pp. 20-21",2019,Mar.
"Y. Mukunoki,K. Konno,T. Horiguchi,A. Nishizawa,M. Kuzumoto,M. Hagiwara,H. Akagi","An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation",,"IEEE Transactions on Power Electronics",,"Vol. 33","No. 11","pp. 9834-9842",2018,Nov.
"Yasushige Mukunoki,Takeshi Horiguchi,Masaki Kuzumoto,Makoto Hagiwara,Hirofumi Akagi","SiC-MOSFETデバイスモデルの開発","平成30年電気学会産業応用部門大会",,,,"  7-1","pp. VII-1",2018,Aug.
"Tsubasa Matsuo,Kentarou Konno,Masaki Kuzumoto,Makoto Hagiwara,Hirofumi Akagi,Yasushige Mukunoki,Takeshi Horiguchi,中武浩","SiC-MOSFETデバイスモデルによる高周波漏洩電流の解析","平成30年電気学会全国大会",,,,"  4-112","pp. 181-182",2018,Mar.
"Tsubasa Matsuo,Kentarou Konno,Masaki Kuzumoto,Makoto Hagiwara,Hirofumi Akagi,Yasushige Mukunoki,Takeshi Horiguchi,中山靖","双方向絶縁形DC-DCコンバータにおけるSiC-MOSFETのソフトスイッチング特性解析","平成29年電気学会産業応用部門大会",,,,"  1-134","pp. I-585-I-586",2017,Aug.
"Shoji Okamoto,Takeshi Horiguchi,Shinji Tominaga,Tadashi Nishimura,Hideaki Fujita,Hirofumi Akagi,木ノ内伸一,大井健史","An Application of a Physics-based IGBT Model to a Protection Circuit for Short-Circuit Conditions",,"IEEJ Trans. IA","Institute of Electrical Engineering in Japan","vol. 134","no. 10","pp. 853-862",2014,Oct.
"Takeshi Horiguchi","パワーデバイスモデルと電気・熱連成解析を適用した電力変換器の高信頼性化に関する研究",,,,,,,2014,Sept.
"Takeshi Horiguchi","パワーデバイスモデルと電気・熱連成解析を適用した電力変換器の高信頼性化に関する研究",,,,,,,2014,Sept.
"Takeshi Horiguchi","パワーデバイスモデルと電気・熱連成解析を適用した電力変換器の高信頼性化に関する研究",,,,,,,2014,Sept.
"Takeshi Horiguchi,Kohei Tsukamoto,Shinji Tominaga,Tadashi Nishimura,Hideaki Fujita,Hirofumi Akagi,Shin-ichi Kinouchi,Takeshi Oi,Masato Koyama","Temperature Analysis of Parallel-Connected IGBTs under PWM Operating Conditions Using a Physics Model",,"IEEJ Trans. IA","Institute of Electrical Engineering in Japan","vol. 134","no. 5","pp. 486-495",2014,May
"Shoji Okamoto,Shinji Tominaga,Tadashi Nishimura,Hideaki Fujita,Hirofumi Akagi,Takeshi Horiguchi,木ノ内伸一,大井健史","Transient behavior of IGBT under short circuit conditions by using physics-based model","Industry Application Society Conference","IEEJ Japan Industry Application Society Conference","Institute of Electrical Engineering in Japan","Vol. 1","no. 87","pp. 363-366",2013,Aug.
"Kohei Tsukamoto,Shinji Tominaga,Masaki Nishimura,Hideaki Fujita,Hirofumi Akagi,Takeshi Horiguchi,木ノ内伸一,大井健史","Estimation of Temperature of IGBTs Connected in Parallel by Using Physics-Based Model","半導体電力変換研究会","電気学会研究会資料",,,"no. SPC-13-024","pp. 49-54",2013,Jan.