"森大介,渡邊脩人,井手啓介,片瀬貴義,平松秀典,細野秀雄,神谷利夫","層状半導体Sr2CuMO3S(M= Ga, In)の合成と光電子物性","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"西間木祐紀,井手啓介,渡邊脩人,金正煥,片瀬貴義,平松秀典,細野秀雄,神谷利夫","希土類添加アモルファス酸化物半導体の電気物性とトランジスタ特性","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"井手啓介,二角勇毅,渡邉脩人,金正煥,片瀬貴義,平松秀典,細野秀雄,神谷利夫","Cr添加アモルファス酸化ガリウム薄膜のフォトルミネッセンス特性","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"笠井悠莉華,井手啓介,片瀬貴義,平松秀典,細野秀雄,神谷利夫","超ワイドバンドギャップアモルファス酸化物半導体a-Ga-Oを用いたショットキーダイオードの作製","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"松尾健志,井手啓介,片瀬貴義,平松秀典,細野秀雄,神谷利夫","ガラス上に成長させた層状セレン化スズ薄膜の電気特性と薄膜トランジスタ","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"ホシンイ,シャオチーウェン,片瀬貴義,井手啓介,平松秀典,細野秀雄,神谷利夫","第一原理計算による層状 (AE = Ca, Sr, Ba)の電子構造と欠陥生成・キャリアドーピング機構の理論解析","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"樋口雄飛,井手啓介,Christian A. Niedermeier,片瀬貴義,平松秀典,細野秀雄,神谷利夫","エピタキシャル歪により増強されるLaNiO3極薄膜のフォノンドラッグ熱電特性","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"山本千紘,半沢幸太,井手啓介,片瀬貴義,平松秀典,細野秀雄,神谷利夫:","FeSb2薄膜のヘテロエピタキシャル成長と熱電特性","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"渡邊脩人,井手啓介,片瀬貴義,笹瀬雅人,戸田喜丈,金正煥,上田茂典,堀場弘司,組頭広志,平松秀典,細野秀雄,神谷利夫","アモルファス酸化物半導体をホストとする蛍光体を用いた直流駆動型発光素子の室温形成","薄膜材料デバイス研究会 第15回研究集会",,,,,,2018,Nov.
"Keisuke Ide,Masato Ota,Takayoshi Katase,Hidenori Hiramatsu,Shigenori Ueda,Hideo Hosono,Toshio Kamiya","Depth Analysis of Near Valence Band Mximum Defect States in Amorphous Oxide Semiconductors: In-Ga-Zn-O","Americas international Meeting on Electrochemistry and Solid state science (AiMES)",,,,,,2018,Sept.
"Yasuo Azuma,Yusaku Kobayashi,Keisuke Ide,Takayoshi Katase,Toshio Kamiya","Electrical characteristics of microfabricatd ferromagneticl material La0.67Sr0.33MnO3","The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development",,,,,,2018,Sept.
"T. Kamiya,K. Ide,K. Takenaka,Y. Setsuhara,A. Hiraiwa,H. Kawarada,T. Katase,H. Hiramatsu,H. Hosono","Device characteristics of rare-earth doped amorphous oxide semiconductors","The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)",,,,,,2018,Sept.
"T. Katase,K. Ide,H. Hiramatsu,H. Hosono,T. Kamiya","Electric double layer transistor and electron-transport properties of (Tl,K)2Fe4Se5 thin films","The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)",,,,,,2018,Sept.
"Keisuke Ide,Yuki Futakado,Naoto Watanabe,Junghwan Kim,Takayoshi Katase,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide",,"Phys. Status Solidi A",,"  216",,"  1800198",2018,Aug.
"Zewen Xiao,Fan-Yong Ran,Min Liao,Hidenori Hiramatsu,Keisuke Ide,Hideo Hosono,Toshio Kamiya","Multiple states and roles of hydrogen in p-type SnS semiconductors",,,,"  30",,"pp. 4498-4502",2018,July
"Keisuke Ide,Masato Ota,Yosuke Kishida,Takayoshi Katase,hidenori hiramatsu,Shigenori Ueda,Hideya Kumomi,HIDEO HOSONO,TOSHIO KAMIYA","[講演奨励賞受賞記念講演] 全反射硬X線光電子分光法によるアモルファス酸化物半導体の価電子帯直上欠陥の深さ方向分布","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.
"Keisuke Ide,* Kyohei Ishikawa,Haochun Tang,Takayoshi Katase,Hidenori Hiramatsu,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening",,"physica status solidi (a)",,,"  1700832","  1-6",2018,Feb.
"二角勇毅,渡邉脩人,井手啓介,金正煥,片瀬貴義,平松秀典,細野秀雄,神谷利夫","遷移金属元素を発光中心としたアモルファス酸化物半導体蛍光体薄膜の探索","第56回 セラミックス基礎科学討論会",,,,,,2018,Jan.
"Keisuke Ide,Kenji Nomura,Hideo Hosono,Toshio Kamiya","Electronic Defects in Amorphous Oxide Semiconductors",,"A Review; Phys. Status Solidi A",,"  216",,"  1800372",2018,