"Takamasa Kawanago,Ryosuke Kajikawa,Kazuto Mizutani,Sung-Lin Tsai,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact",,"IEEE Journal of the Electron Devices Society","IEEE","Vol. 11",,"p. 15-21",2022,Nov.
"Iriya Muneta,Takanori Shirokura,Pham Nam Hai,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure",,"Scientific Reports",,"Vol. 12",,"pp. 17199",2022,Oct.
"Shonosuke Kimura,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Performance Improvements of P-channel GaN HFETs by Atomic Layer Etching using Nitrogen Plasma","the International Workshop on Nitride Semiconductors 2022",,,,,,2022,Oct.
"Riyo Ono,Shinya Imai,Iriya Muneta,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Hitoshi Wakabayashi","微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上","83th JSAP Autumn meeting",,,,,,2022,Sept.
"Shinya Imai,Riyo Ono,Iriya Muneta,Kuniyuki KAKUSHIMA,Tetsuya Tatsumi,Shigetaka Tomiya,KAZUO TSUTSUI,Hitoshi Wakabayashi","MoS2膜質のスパッタ成膜レート依存性調査","83th JSAP Autumn meeting",,,,,,2022,Sept.
"Iriya Muneta,Takanori Shirokura,Pham Nam Hai,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Hitoshi Wakabayashi","強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗","83th JSAP Autumn meeting",,,,,,2022,Sept.
"Kazuto Mizutani,Takuya Hoshii,Takamasa Kawanago,Iriya Muneta,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA","希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善","83th JSAP Autumn meeting",,,,,,2022,Sept.
"Shinichi Tatematsu,Masaya Hamada,Takuya Hamada,Iriya Muneta,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Hitoshi Wakabayashi","アニール処理によるWS2-Niエッジコンタクト特性の向上","83th JSAP Autumn meeting",,,,,,2022,Sept.
"Takamasa Kawanago,Ryosuke Kajikawa,Kazuto Mizutani,Sung Lin Tsai,Iriya Muneta,Takuya Hoshii,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Hitoshi Wakabayashi","アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用","83th JSAP Autumn meeting",,,,,,2022,Sept.
"Kyotaro Ano,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Takashi Yoda,Kuniyuki KAKUSHIMA","Electrical Characteristics of gated SiC pn diode","第83回応用物理学会秋季学術講演会",,,,,,2022,Aug.
"Iriya Muneta,Takanori Shirokura,Pham Nam Hai,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Ferromagnetism and current control of magnetoresistance  in two-dimensional polycrystalline MoS2","第63回フラーレン・ナノチューブ･グラフェン総合シンポジウム",,,,,,2022,Aug.
"Taiga Horiguchi,Takuya Hamada,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing",,"Japanese Journal of Applied Physics",,"Vol. 61",,"  075506",2022,July
"M. Nishizawa,T. Hoshii,H. Wakabayashi,K. Tsutsui,Yoshiaki Daigo,Ichiro Mizushima,T. Yoda,K. Kakushima","Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate",,"Japanese Journal of Applied Physics",,"Vol. 61",,"  SH1011",2022,June
"Si-Meng Chen,Sung Lin Tsai,Kazuto Mizutani,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Edward Yi Chang,Kuniyuki KAKUSHIMA","GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation",,"Japanese Journal of Applied Physics",,"Volume 61",,,2022,June
"Sung-Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Tien-Kan Chung,Edward Yi Chang,Kuniyuki Kakushima","Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,May
"Ryota Shibukawa,Sung Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA","Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films",,"Japanese Journal of Applied Physics",,"Volume 61",,,2022,Apr.
"Atsuki Miyata,Takuya Hoshii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kuniyuki KAKUSHIMA","Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure",,"Japanese Journal of Applied Physics",,"  61","  SH","  SH1005",2022,Apr.
"Iriya Muneta,Takanori Shirokura,Namhai Pham,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Hitoshi Wakabayashi","二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調","2022年第69回応用物理学会春季学術講演会",,,,,,2022,Mar.
"Takamasa KAWANAGO,Takahiro Matsuzaki,Ryosuke Kajikawa,Iriya Muneta,Takuya HOSHII,Kuniyuki Kakushima,Kazuo TSUTSUI,Hitoshi WAKABAYASHI","Experimental demonstration of high-gain CMOS Inverter operation at low Vdd down to 0.5 V consisting of WSe2 n/p FETs",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,Feb.
"Kazuto Mizutani,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Edward Y. Chang,Kuniyuki Kakushima","Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61","No. 2",,2022,Feb.
"Ryo Ono,Shinya Imai,Yuta Kusama,Takuya Hamada,Masaya Hamada,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Emi Kano,Nobuyuki Ikarashi,Hitoshi Wakabayash","Elucidation of PVD MoS2 Film Formation Process and its Structure Focusing on Sub-Monolayer Region",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,Feb.
"Takuya Hamada,Masaya Hamada,Taiga Horiguchi,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Tetsuya Tatsumi,Shigetaka Tomiya,Hitoshi Wakabayashi","High Seebeck Coefficient in PVD-WS2 Film with Grain-Size Enlargement",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 61",,,2022,Feb.