"Takuya Murooka,Junya Yaita,Takayuki Iwasaki,Toshiharu Makino,Hiromitsu Kato,Masahiko Ogura,Mutsuko Hatano","A High Performance Diamond JFET for Next Generation Power Semiconductor Devices","The Sixth International Education Forum on Envbironment and Energy Science",,,,,,2017,Dec.
"室岡拓也,矢板潤也,岩崎孝之,牧野俊晴＊,加藤宙光＊,小倉政彦＊,波多野睦子","大電流化を目指したダイヤモンドJFETの新規構造","第31回ダイヤモンドシンポジウム",,,,,,2017,Nov.
"Takeru Suto,Junya Yaita,Takayuki Iwasaki,Mutsuko Hatano","Heteroepitaxial Growth of Highly-Oriented Diamond Films on 3C-SiC / Si (111) Substrates by Pulse Bias Enhanced Nucleation","2016 MRS Fall Meeting & Exhibit",,,,,,2017,Nov.
"Takeyuki Tsuji,Hayato Ozawa,Junya Yaita,Takayuki Iwasaki,Mutsuko Hatano","High Growth Rate CVD of Selectively Aligned Ensemble NV Centers","2017MRS Fall Meeting & Exhibit",,,,,,2017,Nov.
"矢板 潤也,星野 晴華,辻 赳行,岩崎 孝之,波多 野 睦子","ヘテロエピタキシャル核形成技術を用いたナノダイヤモ ンド中のNVセンター配向制御","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"辻 赳行,矢板 潤也,小澤 勇斗,岩崎 孝之,波多野 睦子","高プラズマパワー密度CVDによる高配向・高生成NVアンサンブルの高速合成","第78回応用物理学会秋季学術講演会",,,,,,2017,Sept.
"Takayuki Iwasaki,Taisuke Suwa,Junya Yaita,Hiromitsu Kato,Toshiharu Makino,Masahiko Ogura,Daisuke Takeuchi,Satoshi Yamasaki,Mutsuko Hatano","Observation of Interface Defects in Diamond Lateral p-n-Junction Diodes and Their Effect on Reverse Leakage Current",,"IEEE TRANSACTIONS ON ELECTRON DEVICES",,"Vol. 64","No. 8","pp. 3298-3302",2017,July
"須藤建瑠,桑原新之介,矢板潤也,岩崎孝之,波多野睦子","高酸素濃度成長を用いたSi(111)上高配向ダイヤ膜の合成","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"J. Yaita,T. Iwasaki,Meralys R. Natal,Stephen E. Saddow,M. Hatano","High-Quality Heteroepitaxial Diamond Films Grown on 3C-SiC/Si Substrates","Hasselt Diamond Workshop 2017",,,,,,2017,Mar.
"J. Yaita,M. Natal,S. E. Saddow,M. Hatano,T. Iwasaki","Influence of High Power-Density Plasma on Heteroepitaxial Diamond Nucleation on 3C-SiC Surface",,"Applied Physics Express",,"Vol. 10","No. 4","pp. 045502-1-4",2017,Mar.
"T. Suto,J. Yaita,T. Iwasaki,M. Hatano","Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC-Si (111) substrate",,"Appl. Phys. Lett.",,"Vol. 110",,"pp. 062102-1-062102-5",2017,Feb.