"�¡ˆä �T–ç,Š��ì —º‰î,�ì“ߎq �‚’¨,�@“c ˆÉ—�–ç,Šp“ˆ –M”V,’C–¤ “N–ç,•y’J –Η²,“›ˆä ˆê�¶,Žá—Ñ �®","ƒXƒpƒbƒ^MoS2–Œ‚ɑ΂·‚éƒGƒbƒW‹à‘®ƒRƒ“ƒ^ƒNƒg‚Ì“d—¬“dˆ³“Á�«","‘æ84‰ñ‰ž—p•¨—�Šw‰ï�H‹GŠw�p�u‰‰‰ï",,,,,,2023,Sept.
"Š��ì —º‰î,�ì“ߎq �‚’¨,�@“c ˆÉ—�–ç,�¯ˆä ‘ñ–ç,Šp“ˆ –M”V,“›ˆä ˆê�¶,Žá—Ñ �®","ƒgƒbƒvƒQ�[ƒg‚ÉŽ©ŒÈ�®�‡‚µ‚½WOx S/D‚ð—p‚¢‚½30-50 nm–ŒŒúWSe2ƒoƒbƒNƒ`ƒƒƒlƒ‹pFET","‘æ84‰ñ‰ž—p•¨—�Šw‰ï�H‹GŠw�p�u‰‰‰ï",,,,,,2023,Sept.
"Ryosuke Kajikawa,Takamasa Kawanago,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs","International Conference on Solid State Devices and Materials",,,,,,2023,Sept.