"T. Honda,K. Hara,J. Yoshino,H. Kukimoto","Growth of CuGaS2 based chalcopyrite compounds and their heterostructure by MOVPE",,"Japanese research review for pioneering gTernaly and multinary compounds in the 21 centuryh, IPAP book 1",,,,"pp. 98-101",2001, "J. Yoshino","III-V based diluted magnetic semiconductors -Promising properties and future prospects-",,"Japanese research review for pioneering gTernaly and multinary compounds in the 21 centuryh, IPAP book 1",,,,"pp. 312-317",2001, "M. Tazima,K. Yamamoto,D. Okazawa,A. Nagashima,J. Yoshino","Effect of Mn on the low temperature growth of GaAs and GaMnAs",,"Physica E",,"Vol. 10","No. 1-3","pp. 186-191",2001, "Y. Satoh,D. Okazawa,A. Nagashima,J. Yoshino","Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs",,"Physica E",,"Vol. 10","No. 1-3","pp. 196-200",2001, "D. Okazawa,K. Yamamoto,A. Nagashima,J. Yoshino","MBE growth and properties of 3d transition metal-doped GaAs",,"Physica E",,"Vol. 10","No. 1-3","pp. 229-232",2001, "M. Tajima,A. Nagashima,J. Yoshino","STM study on re-entrant behaviors observed dduring MBE growth of GaAs",,"13th International conference on crystal growth, Abstracts, 03a-K31-11",,,,"pp. 206",2001, "T. Honda,K. Hara,J. Yoshino,H. Kukimoto","CuGaS_2-based light emitting diode grown by MOVPE",,"13th International conference on crystal growth, Abstracts, 03a-K31-11",,,,"pp. 383",2001, "M. Tajima,A. Nagashima,J. Yoshino","STM studies on reentrant RHEED oscillation observed during low temperature MBE growth of GaAs",,"20th Electronic materials symposium , Extended abstracts",,,,"pp. 127-128",2001, "K. Yamamoto,A. Nagashima,J. Yoshino","MBE growth of (Ga,Mn)As with high Mn-content",,"20th Electronic materials symposium , Extended abstracts",,,,"pp. 111-112",2001, "A. Nagashima,M. Tajima,J. Yoshino","Study on mechanism of re-entrant RHEED oscillation observed during LT-MBE growth of GaAs",,"28th International symposium on compound semiconductors, MoP22, Abstracts",,,,"pp. 34",2001, "AYATO NAGASHIMA,J. Yoshino","Structural analysis of GaAs(001)-c(4x4) with LEED IV technique",,"Surface Science",,"Vol. 493","No. 1-3","pp. 227-231",2001,