"M. Watanabe,H. Toyao,J. Okabayashi,J. Yoshino","Characteristics of GaMnAs-based double barrier TMR structures",,"phys. stat. sol. (c)",,"Vol. 3","No. 12","pp. 4180-4183",2006,Dec.
"M. Watanabe,H. Toyao,J. Okabayashi,J. Yoshino","Current-driven magnetization reversal in GaMnAs-based magnetic tunneling junctions: Comparison between single and double barrier structures","The 11th Symposium on Physics and Application of Spin-Related Phenomena in Semiconductors","Abstracts of The 11th Symposium on Physics and Application of Spin-Related Phenomena in Semiconductors",,,,"pp. 9-10",2006,Dec.
"T. Arai,M. Suzuki,Y. Ueno,J. Okabayashi,J. Yoshino","Structure transition between two GaAs (001) c(4x4) surface reconstructions under As4 flux","The 14th International Conference on Molecular Beam Epitaxy","Abstract workbook of The 14th International Conference on Molecular Beam Epitaxy",,,,"pp. 291",2006,Sept.
"M. Suzuki,T. Arai,Y. Oueno,J. Okabayashi,J. Yoshino","Study on initial growth surface of MnAs on two different GaAs(001) c(4x4) reconstructions","The 14th International Conference on Molecular Beam Epitaxy","Abstract workbook of The 14th International Conference on Molecular Beam Epitaxy",,,,"pp. 141",2006,Sept.
"H. Toyao,Y. Tanikawa,M. Watanabe,J. Yoshino","Current-driven magnetic-orientation reversal achieved in GaMnAs-based double barrier TMR structures at extremely low-threshold current density","The 4th International Conference on Physics and Application of Spin-Related Phenomena in Semiconductors","Abstracts of The 4th International Conference on Physics and Application of Spin-Related Phenomena in Semiconductors",,,,"pp. 69",2006,Aug.