"李智恩,山原佳晃,渥美裕樹,西山伸彦,荒井滋久","オンチップ光回路のためのBCB貼り付けを用いたSi基板上InP薄膜受動素子の特性","電子情報通信学会","光エレクトロニクス研究会(OPE)",,,,,2012,Dec.
"Yuusuke Hayashi,Ryou Osabe,Keita Fukuda,Yuki Atsumi,JoonHyun Kang,Nobuhiko Nishiyama,SHIGEHISA ARAI","GaInAsP/SOI Hybrid Laser by N2 Plasma Activated Low Temperature Bonding","The 2nd International Symposium on  Photonics and Electronics Convergence -Advanced Nanophotonics and Silicon Device Systems- (ISPEC2012)",,,,,,2012,Dec.
"林侑介,長部亮,福田渓太,鈴木純一,渥美裕樹,姜??,西山伸彦,荒井滋久","窒素プラズマ活性化を用いたIII-V/Si直接貼付とそのハイブリッドレーザへの応用","レーザ・量子エレクトロニクス研究会",,,,,,2012,Dec.
"Mizuki Shirao,Nobuhiko Nishiyama,Noriaki Sato,Shigehisa Arai","Theoretical analysis of the damping effect on a transistor laser",,"IEICE Electronics Express",,"Vol. 9","No. 23","pp. 1792-1798",2012,Dec.
"西山伸彦","シリコンフォトニクスにおける光デバイス研究開発動向?ハイブリッド半導体レーザを中心にして?","レーザー学会東京支部セミナー",,"レーザー学会",,,,2012,Nov.
"Yuki Atsumi,Dan-Xia Xu,Andre Delage,Jens Schmid,Martin Vachon,Pavel Cheben,Siegfried Janz,Nobuhiko Nishiyama,SHIGEHISA ARAI","Simultaneous retrieval of fluidic refractive index and surface adsorbed molecular film thickness using silicon wire waveguide biosensors",,"Optics Express","Optical society of America","Vol. 20","No. 24","pp. 26969-26977",2012,Nov.
"JoonHyun Kang,Yuki Atsumi,Manabu Oda,Tomohiro Amemiya,Nobuhiko Nishiyama,Shigehisa Arai","Layer-to-Layer Grating Coupler Based on Hydrogenated Amorphous Silicon for Three-Dimensional Optical Circuits",,"Jpn. J. Appl. Phys.",,"Vol. 51","No. 12","pp. 120203",2012,Nov.
"Noriaki Sato,Mizuki Shirao,Takashi Sato,Masashi Yukinari,Nobuhiko Nishiyama,Tomohiro Amemiya,S. Arai","Room-Temperature Continuous-Wave Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser","23rd IEEE International Semiconductor Laser Conference (ISLC 2012)",,,,"No. MA7",,2012,Oct.
"T. Shindo,M. Futami,K. Doi,T. Amemiya,N. Nishiyama,S. Arai","Modulation Bandwidth of GaInAsP/InP Lateral-Current-Injection Membrane Laser","23rd IEEE International Semiconductor Laser Conference (ISLC 2012)",,,,"No. TuP17",,2012,Oct.
"武 大助,白尾 瑞基,丸山 薫,西山 伸彦,浅田 雅洋,荒井 滋久","光励起キャリアゲート型光-テラヘルツ信号直接変換器の信号特性の検討","第73回応用物理学会学術講演会","第 73 回応用物理学会学術講演会 講演予稿集(2012 秋 愛媛大学・松山大学) 11p-B1-8",,,,,2012,Sept.
"西山伸彦","長波長帯面発光レーザのこれまでとこれから","２０１２年電子情報通信学会エレクトロニクスソサイエティ大会","２０１２年電子情報通信学会エレクトロニクスソサイエティ大会予稿集",,,,,2012,Sept.
"福田渓太,長部亮,林侑介,渥美裕樹,西山伸彦,荒井滋久","AlInAs酸化狭窄層を有するGaInAsP/SiハイブリッドSOA多機能集積のための構造設計","電子情報通信学会 2012年ソサイエティ大会","電子情報通信学会 2012年ソサイエティ大会",,"  富山 C-3-62",,,2012,Sept.
"サイファー たけし,渥美 裕樹,小田 学,姜 ??,西山 伸彦,荒井 滋久","紫外線照射を用いた温度無依存シリコンスロットリング共振器の波長トリミング","秋季第73回応用物理学会学術講演会",,"応用物理学会学","  12p-C5-17",,,2012,Sept.
"Daisuke Take,Mizuki Shirao,Kaoru Maruyama,Nobuhiko Nishiyama,Masahiro Asada,Shigehisa Arai","Compact Optical/THz Signal Converter using Photo-generated Carrier Gate in THz Waveguide","the IEEE Photonics Conference 2012","the IEEE Photonics Conference 2012",,,,,2012,Sept.
"山原佳晃,二見充輝,進藤隆彦,李智恩,土居恭平,雨宮智宏,西山伸彦,荒井滋久","GaInAsP横方向接合型薄膜フォトダイオードの特性評価","2012年電子情報通信学会ソサイエティ大会",,,,,"  C-4-15",2012,Sept.
"李智恩,山原佳晃,進藤隆彦,二見充輝,土居恭平,西山伸彦,荒井滋久","InP系横接合型半導体薄膜能動光素子と細線光導波路のテーパー結合","2012年電子情報通信学会ソサイエティ大会",,,,,"  C-3-93",2012,Sept.
"姜??,渥美裕樹,サイファー豪志,雨宮智宏,西山伸彦,荒井滋久","金属ミラー付き多層アモルファスシリコン細線導波路間のグレーティングカプラ","電気情報通信学会","電子情報通信学会 2012年ソサイエティ大会",,"  富山","  C-3-59",,2012,Sept.
"Kyohei Doi,Takahiko Shindou,Mitsuaki Futami,Tomohiro Amemiya,Nobuhiko Nishiyama,SHIGEHISA ARAI","Thermal Analysis of Self-Heating Effect in GaInAsP/InP Membrane DFB Laser on Si Substrate","2012 IEEE Photonics Conference (IPC-2012)",,,,"No. ThO2",,2012,Sept.
"雨宮智宏,金澤徹,石川篤,明賀聖慈,村井英淳,進藤隆彦,姜??,西山伸彦,宮本恭幸,田中拓男,荒井滋久","透磁率の制御によるInP 系導波路型光変調器",,"第73回秋季応用物理学会学術講演会",,"Vol. 愛媛","No. 13p-C5-3",,2012,Sept.
"村井 英淳,雨宮 智宏,進藤 隆彦,姜 ??,明賀 聖慈,西山伸彦,荒井 滋久","金属側壁層を有するInP系プラズモニック導波路の曲げ特性評価",,"第73回秋季応用物理学会学術講演会",,"Vol. 愛媛","No. 13p-C5-14",,2012,Sept.
"土居恭平,進藤隆彦,二見充輝,雨宮智宏,西山伸彦,荒井滋久","オンチップ光配線に向けた半導体薄膜レーザの熱特性に関する検討",,"第73回秋季応用物理学会学術講演会",,"Vol. 愛媛","No. 13a-PA8-2",,2012,Sept.
"二見充輝,進藤隆彦,土居恭平,雨宮智宏,西山伸彦,荒井滋久","Beドープp-GaInAsコンタクト層を有する薄膜DFBレーザのしきい値低減",,"第73回秋季応用物理学会学術講演会",,"Vol. 愛媛","No. 13a-PA8-1",,2012,Sept.
"Yuusuke HAYASHI,Ryo OSABE,Keita FUKUDA,Nobuhiko NISHIYAMA,Shigehisa ARAI.","GaInAsP/Si Hybrid Fabry-Perot Laser using N2 Plasma Activated Low Temperature Bonding","2012 IEEE Photonics Conference",,,,"No. ThO 4",,2012,Sept.
"林 侑介,長部 亮,福田 渓太,渥美 裕樹,姜 ??,西山 伸彦,荒井 滋久.","表面活性化接合を用いたGaInAsP/Siハイブリッドファブリペローレーザ","第73回応用物理学会学術講演",,,,"No. 12a-C6-8",,2012,Sept.
"Yuuta Takino,Mizuki Shirao,Noriaki Sato,takashi sato,Tomohiro Amemiya,Nobuhiko Nishiyama,SHIGEHISA ARAI","Improved regrowth interface of AlGaInAs/InP-buried-heterostructure lasers by in-situ thermal cleaning",,"IEEE Journal of Quantum Electronics",,"Vol. 48","No. 8","pp. 971-979",2012,Aug.
"M. Futami,T. Shindo,K. Doi,T. Amemiya,N. Nishiyama,S. Arai","Low-Threshold Operation of LCI-Membrane-DFB Lasers with Be-doped GaInAs Contact Layer","24th International Conference on Indium Phosphide and Related Materials (IPRM 2012)",,,,"No. Th-2C.5",,2012,Aug.
"Seiji Myoga,Tomohiro Amemiya,Atsushi Ishikawa,Nobuhiko Nishiyama,Takuo Tanaka,Shigehisa Arai","Carrier-concentration-dependent resonance frequency shift in a metamaterial loaded semiconductor",,"J. Opt. Soc. Am. B",,"Vol. 29","No. 8","pp. 2110-2115",2012,Aug.
"土居 恭平,進藤 隆彦,二見 充輝,雨宮 智宏,西山 伸彦,荒井 滋久","GaInAsP/InP半導体薄膜DFBレーザの電流注入動作と熱特性解析","電子情報通信学会 レーザ・量子エレクトロニクス研究会","IEICE Technical Report",,"Vol. 112","No. 180","pp. 41-46",2012,Aug.
"Jieun Lee,Yoshiaki Yamahara,Yuki Atsumi,Takahiko Shindou,Tomohiro Amemiya,Nobuhiko Nishiyama,SHIGEHISA ARAI","Compact InP-based 1×2 MMI Splitter on Si Substrate with BCB Wafer Bonding for Membrane Photonic Circuits","24th International Conference on Indium Phosphide and Related Materials",,,,,"  Mo-1C.1",2012,Aug.
"Tomohiro Amemiya,Seiji Myoga,Takahiko Shindo,Eijun Murai,Nobuhiko Nishiyama,SHIGEHISA ARAI","Permeability retrieval in InP-based waveguide optical device combined with metamaterial",,"Optics Lett.",,"Vol. 37","No. 12","pp. 2301-2303",2012,July
"Mitsuaki Futami,Takahiko Shindo,Takayuki Koguchi,Keisuke Shinno,Tomohiro Amemiya,Nobuhiko Nishiyama,Shigehisa Arai","GaInAsP/InP Lateral Current Injection Laser with Uniformly Distributed Quantum Well Structure",,"IEEE Photonics Technol. Lett.",,"Vol. 24","No. 11","pp. 888-890",2012,June
"Yuki Atsumi,Dan-Xia Xu,Andre Delage,Jens Schmid,Martin Vachon,Pavel Cheben,Siegfried Janz,Nobuhiko Nishiyama,Shigehisa Arai","Differentiation between changes in liquid refractive index and surface adsorbed molecular thickness using SOI wire waveguide ring resonator biosensor arrays","Integrated Photonics Research, Silicon and Nanophotonics 2012",,"Optical society of America","  ITu","  3B","  4",2012,June
"M. Futami,K. Shinno,T. Shindo,K. Doi,T. Amemiya,N. Nishiyama,S. Arai","Improved Quantum Efficiency of GaInAsP/InP Top Air-Clad Lateral Current Injection Lasers","2012 IEEE Optical Interconnects Conference (OIC-2012)",,,,"No. TuB3",,2012,May
"Yusuke HAYASHI,Ryo OSABE,Keita FUKUDA,Nobuhiko NISHIYAMA,Shigehisa ARAI.","AlInAs Selective Oxidation for GaInAsP/Si Hybrid Semiconductor Laserusing Surface Activated Bonding","2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration",,,,,"pp. 93-94",2012,May
"T. Shindo,T. Koguchi,M. Futami,K. Shinno,K. Doi,T. Amemiya,N. Nishiyama,S. Arai","10 Gb/s Operation of GaInAs/InP Top Air-Clad. Lateral Junction Waveguide-type Photodiode","2012 IEEE Optical Interconnects Conference (OIC-2012)",,,,"No. TuP2",,2012,May
"K. Ishigaki,M. Shiraishi,S. Suzuki,M. Asada,N. Nishiyama,S. Arai","Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes",,"Electron. Lett.",,"vol. 48","no. 10","pp. 582-583",2012,May
"Tomohiro Amemiya,Takahiko Shindo,Seiji Myoga,Eijun Murai,Nobuhiko Nishiyama,Shigehisa Arai","Non-unity permeability in InP-based photonic device combined with metamaterial",,"Metamaterial (ISBN: 978-953-51-0591-6)","IN-TECH",,,"pp. 215-238",2012,May
"Daisuke Takahashi,SeungHun Lee,Mizuki Shirao,Takahiko Shindo,Keisuke Shinno,Tomohiro Amemiya,Nobuhiko Nishiyama,Shigehisa Arai","Carrier-Transport-Limited Modulation Bandwidth in Distributed Reflector Lasers with Wirelike Active Regions",,"IEEE J. Quantum Electron.",,"Vol. 48","No. 5","pp. 688-695",2012,May
"JoonHyun Kang,Yoshihiro Nishikawa,Yuki Atsumi,Manabu Oda,Tomohiro Amemiya,Nobuhiko Nishiyama,SHIGEHISA ARAI","Amorphous Silicon Grating-Type Layer-to-Layer Couplers for Intra-Chip Connection","2012 IEEE Optical Interconnects Conference (OIC-2012)",,,,"No. TuD3",,2012,May
"Jieun Lee,Yasuna Maeda,Yuki Atsumi,Yuuta Takino,Nobuhiko Nishiyama,SHIGEHISA ARAI","Low-Loss GaInAsP Wire Waveguide on Si Substrate with Benzocyclobutene Adhesive Wafer Bonding for Membrane Photonic Circuits",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 51",,"pp. 042201-1 - 042201-5",2012,Apr.
"林侑介,長部亮,福田渓太,西山伸彦,荒井滋久.","Si導波路を用いた波長フィルタを有するAlInAs酸化狭窄型GaInAsP/Siハイブリッドレーザの検討","光エレクトロニクス研究会(OPE)",,"電子情報通信学会",,,,2012,Apr.
"村井英淳,雨宮智宏,進藤隆彦,姜??,明賀聖慈,西山伸彦,荒井滋久","金属側壁層有するInP系プラズモニック導波路の作製評価","電気情報通信学会","電子情報通信学会 2012年総合大会",,"  C-3-91",,,2012,Mar.
"李智恩,山原佳晃,渥美 裕樹,進藤 隆彦,西山 伸彦,荒井 滋久","BCB貼り付け法によるSi基板上GaInAsP細線1×2 MMIの作製","第59回応用物理学関係連合講演会",,,"  17a-F4-11",,,2012,Mar.
"渥美裕樹,姜??,西川佳宏,小田学,雨宮智宏,西山伸彦,荒井滋久","ブロッホ波干渉型低損失連結クロス導波路の作製評価","第59回応用物理学関係連合講演会","第59回応用物理学関係連合講演会",,"  18a-GP4-22",,,2012,Mar.
"信野圭祐,進藤隆彦,二見充輝,土居恭平,雨宮智宏,西山伸彦,荒井滋久","横方向電流注入型レーザの内部量子効率向上","第59回応用物理学関係連合講演会","第59回応用物理学関係連合講演会",,"  16a-F3-7",,,2012,Mar.
"明賀聖慈,雨宮智宏,石川篤,西山伸彦,田中拓男,荒井滋久","GaInAs/InP半導体上メタマテリアルにおける共振波長変化の金属膜厚依存性","第59回応用物理学関係連合講演会","第59回応用物理学関係連合講演会",,"  16p-E5-9",,,2012,Mar.
"姜??,西川佳宏,渥美裕樹,小田学,雨宮智宏,西山伸彦,荒井滋久","多層アモルファスシリコン細線導波路間の信号伝送用グレーティングカプラ","電気情報通信学会","電子情報通信学会 2012年総合大会",,"  岡山","  C-3-38",,2012,Mar.
"進藤隆彦,二見充輝,信野圭祐,小口貴之,雨宮智宏,西山伸彦,荒井滋久","横方向電流注入型半導体薄膜レーザの直接変調帯域の検討","電子情報通信学会 2012年総合大会",,,,,,2012,Mar.
"小田学,渥美裕樹,サイファー豪志,姜??,雨宮智宏,西山伸彦,荒井滋久","温度無依存BCB 埋め込みSi スロットリング共振器を用いたドロップフィルタ","電気情報通信学会","電子情報通信学会 2012年総合大会",,"  C-3-39",,,2012,Mar.
"Yuki ATSUMI,Manabu ODA,JoonHyun KANG,Nobuhiko NISHIYAMA,Shigehisa ARAI","Athermal wavelength filters toward optical interconnection to LSIs",,"IEICE Transactions on Electronics","IEICE","Vol. E95-C","No. 2","pp. 229-236",2012,Feb.
"Mizuki Shirao,takashi sato,Noriaki Sato,Nobuhiko Nishiyama,SHIGEHISA ARAI","Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-?m wavelength",,"Optics Express",,"Vol. 20","No. 4","pp. 3983?3989",2012,Feb.