"Junghwan Kim,Norihiko Miyokawa,Takumi Sekiya,Keisuke Ide,Yoshitake Toda,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Ultrawide band gap amorphous oxide semiconductor, Ga?Zn?O",,"Thin Solid Films",,"Vol. 614",,"pp. 84-89",2016,Sept.
"Junghwan Kim,Nobuhiro Nakamura,Toshio Kamiya,Hideo Hosono","NBIS-Stable Oxide Thin-Film Transistors Using Ultra-Wide Bandgap Amorphous Oxide Semiconductors","Society for Information Display","SID Symposium Digest of Technical Papers",,"vol. 47",,"pp. 951-953",2016,May
"Hideo Hosono,Junghwan Kim,Toshio Kamiya,Nobuhiro Nakamura,Satoru Watanabe","Novel Inorganic Electron Injection and Transport Materials Enabling Large]Sized Inverted OLEDs Driven by Oxide TFTs","Society for Information Display (SID)","SID Symposium Digest of Technical Papers","Wiley","vol. 47",,"pp. 401-404",2016,May
"“n็ณ‹ล,ˆษ“ก˜aO,“n็ณrฌ,’†‘บLG,‹{์’ผ’ส,‹เณเ…,Œห“cŠ์ไ,_’J—˜•v,ื–์G—Y","”๑ปŽฟC12A7ƒGƒŒƒNƒgƒ‰ƒCƒh‚ฬ—L‹@EL‚ึ‚ฬ‰ž—p",,"ˆฎษŽqŒค‹†•๑",,"Vol. 66",,"pp. 26-31",2016,
"Haochun Tang,Keisuke Ide,Hidenori Hiramatsu,Shigenori Ueda,Naoki Ohashi,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Effects of thermal annealing on elimination of deep defects in amorphous In?Ga?Zn?O thin-film transistors",,"Thin Solid Films",,"Vol. 614",,"  73-78",2016,
"Junghwan KIM,Norihiko MIYOKAWA,Keisuke IDE,Hidenori HIRAMATSU,Hideo HOSONO,Toshio KAMIYA","Transparent amorphous oxide semiconductor thin film phosphor, In?Mg?O:Eu",,"J. Cerm. Soc. Jpn.",,"Vol. 124",,"pp. 532-535",2016,
"Christian A. Niedermeier,Sneha Rhode,Sarah Fearn,Keisuke Ide,Michelle A. Moram,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Solid phase epitaxial growth of high mobility La:BaSnO<sub>3</sub> thin films co-doped with interstitial hydrogen",,"Appl. Phys. Lett.",,"Vol. 108",,"pp. 172101-1 -5",2016,
"Min Liao,Seiji Takemoto,Zewen Xiao,Yoshitake Toda,Tomofumi Tada,Shigenori Ueda,Toshio Kamiya,Hideo Hosono","Difficulty of carrier generation in orthorhombic PbO",,"J. Appl. Phys",,"Vol. 119",,"pp. 165701-1 - 7",2016,
"Hiroshi Yanagi,Yuki Iguchi,Taiki Sugiyama,Toshio Kamiya,Hideo Hosono","N-type conduction in SnS by anion substitution with Cl",,"Appl. Phys. Express",,"Vol. 9",,"pp. 051201-1 - 3",2016,
"Kota Hanzawa,Hikaru Sato,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono","Electric field-induced superconducting transition of insulating FeSe thin film at 35 K",,"Proc. Natl. Acad. Sci. USA",,"Vol. 113",,"pp. 3986-3990",2016,
"Takeshi Inoue,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Nonequilibrium Rock-Salt-Type Pb-Doped SnSe with High Carrier Mobilities ? 300 cm<sup>2</sup>/(Vs)",,"Chem. Mater.",,"Vol. 28",,"pp. 2278-2286",2016,
"Taisuke Hatakeyama,Hikaru Sato,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono","Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe<sub>2</sub>As<sub>2</sub>",,"Appl. Phys. Express",,"Vol. 9",,"p. 055505",2016,
"Fan-Yong Ran,Zewen Xiao,Hidenori Hiramatsu,Keisuke Ide,Hideo Hosono,Toshio Kamiya","SnS thin films prepared by H2S-free process and its p-type thin film transistor",,"AIP Adv.",,"Vol. 6",,"pp. 015112-1 - 6",2016,
"Toshio Kamiya,Hideo Hosono","Oxide TFTs",,"Handbook of Visual Display Technology",,,,"pp. 1111-1144",2016,
"Junghwan Kim,Norihiko Miyokawa,Keisuke Ide,Yoshitake Toda,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor",,"AIP Advances",,"Vol. 6",,"p. 015106",2016,
"Zewen Xiao,Fan-Yong Ran,Min Liao,Shigenori Ueda,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Amorphous pnictide semiconductor BaZn<sub>2</sub>As<sub>2</sub> exhibiting high hole mobility",,"Appl. Phys. Lett.",,"Vol. 109",,"pp. 242105-1 - 4",2016,
"Hikaru Sato,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono","Enhanced critical-current in P-doped BaFe<sub>2</sub>As<sub>2</sub> thin films on metal substrates arising from poorly aligned grain boundaries",,"Sci. Rep.",,"Vol. 6",,"p. 36828",2016,