"Takayoshi Katase,Toshio Kamiya","Giant electronic conductivity switching driven by artificial modulation of crystal structure dimensionality",,"JSAP Review",,,,"pp. 220418",2022,Dec.
"片瀬貴義,ホ シンイ,チェン ジンシュアイ,井手啓介,平松秀典,細野秀雄,神谷利夫","(111)配向非平衡岩塩型(Sn,Ca)Seエピタキシャル薄膜のドメイン境界の電気特性","日本セラミックス協会第42回電子材料研究討論会",,,,,,2022,Nov.
"片瀬貴義,ホ シンイ,チェン ジンシュアイ,井手啓介,平松秀典,細野秀雄,神谷利夫","準安定(Pb1-xSnx)Se固溶体の合成：2次元-3次元構造転移の誘起と電気・熱伝導率変調","日本セラミックス協会第42回電子材料研究討論会",,,,,,2022,Nov.
"フゾンシュ,平松茉莉,ホシンイ,片瀬貴義,井手啓介,平松秀典,細野秀雄,神谷利夫","非平衡(Sn1-xPbx)S固溶体の格子間Snによる高濃度電子ドーピング","日本セラミックス協会第42回電子材料研究討論会",,,,,,2022,Nov.
"片瀬貴義,神谷利夫","非平衡(Pb,Sn)Se半導体における2D-3D構造転移の人工的誘起と巨大電気特性変調",,"応用物理",,"Vol. 91","No. 11","pp. 683",2022,Nov.
"清水篤,井手啓介,片瀬貴義,平松秀典,細野秀雄,神谷利夫","超高真空スパッタリング装置を用いた高移動度多結晶 Zn3N2 薄膜","薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」",,,,,,2022,Nov.
"ホ シンイ,片瀬貴義,井手啓介,細野秀雄,神谷利夫","ZnO中の水素複合欠陥","薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」",,,,,,2022,Nov.
"門野太助,井手啓介,片瀬貴義,平松秀典,細野秀雄,神谷利夫","アモルファス 12CaO・7Al2O3 を用いた ReRAM","薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」",,,,,,2022,Nov.
"嵯峨野太一,井手啓介,片瀬貴義,平松秀典,細野秀雄,神谷利夫","スパッタリング法によるアモルファス酸化ガリウム薄膜の作製とダイオー ド特性の評価","薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」",,,,,,2022,Nov.
"K. Zhou,Keisuke Ide,Takayoshi Katase,Toshio Kamiya,B. Huang,P. Yen,T. Chang,S. M. Sze","Suppressing Hydrogen Diffusion and Enhancing Reliability of Short-Channel InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering","薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」",,,,,,2022,Nov.
"Makoto Minohara,Yuka Dobashi,Naoto Kikuchi,Akane Samizo,Takashi Honda,Xinyi He,Takayoshi Katase,Toshio Kamiya,Keishi Nishio,Yoshihiro Aiura","Tuning of Hole Carrier Density in p-type α-SnWO4 by Exploiting Oxygen Defects",,"Materials Advances",,"Vol. 3",,"pp. 9111",2022,Nov.
"Keisuke Ide,Naoto Watanabe,Takayoshi Katase,Masato Sasase,Junghwan Kim,Shigenori Ueda,Koji Horiba,Hiroshi Kumigashira,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes",,"Appl. Phys. Lett.",,"Vol. 121",,"pp. 192108",2022,Nov.
"樋口龍生,片瀬貴義,半沢幸太,井手啓介,平松秀典,細野秀雄,神谷利夫","層状SnSe非平衡相のエピタキシャル膜による安定化と構造・電気特性","日本セラミックス協会 第35回秋季シンポジウム",,,,,,2022,Sept.
"ホシンイ,チェン ジンシュアイ,片瀬貴義,井手啓介,平松秀典,細野秀雄,神谷利夫","(111)配向非平衡岩塩型(Sn,Ca)Seエピタキシャル薄膜のドメイン境界の電気特性","日本セラミックス協会 第35回秋季シンポジウム",,,,,,2022,Sept.
"フゾンシュ,平松茉莉,ホシンイ,片瀬貴義,井手啓介,平松秀典,細野秀雄,神谷利夫","非平衡(Sn,Pb)S固溶体の合成: 格子間Snによる電子ドーピングと強フォノン散乱","日本セラミックス協会 第35回秋季シンポジウム",,,,,,2022,Sept.
"片瀬貴義,西村優作,ホ シンイ,只野央将,井手啓介,気谷卓,半沢幸太,平松秀典,川路均,細野秀雄,神谷利夫","準安定(Pb1-xSnx)Se固溶体の2次元-3次元構造転移に伴う熱伝導率変調","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"片瀬貴義,ホ シンイ,チェン ジンシュアイ,井手啓介,平松秀典,細野秀雄,神谷利夫","高移動度岩塩型(Sn,Ca)Se準安定相のエピタキシャル薄膜成長とキャリア輸送特性","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"Xinyi He,Haoyun Zhang,Takumi Nose,Takayoshi Katase,Terumasa Tadano,Keisuke Ide,hidenori hiramatsu,HIDEO HOSONO,TOSHIO KAMIYA","Degenerated hole doping and enhanced thermoelectric figure-of-merit ZT in layered SnSe by isovalent Te ion substitution","第83回応用物理学会秋季学術講演会",,,,,,2022,Sept.
"片瀬貴義,神谷利夫","電気伝導率と熱起電力を同時に向上できる酸化物熱電材料を開発",,"セラミックス",,"Vol. 57","No. 2","pp. 114",2022,Aug.
"フゾンシュ,平松茉莉,ホシンイ,片瀬貴義,井手啓介,平松秀典,細野秀雄,神谷利夫","(Sn1-xPbx)S固溶体の非平衡合成と熱・電気特性制御","応用物理学会第6回フォノンエンジニアリング研究会",,,,,,2022,July
"Kohei Yamamoto,Tomoyuki Tsuyama,Suguru Ito,Kou Takubo,Iwao Matsuda,Niko Pontius,Christian Schusler-Langeheine,Makoto Minohara,Hiroshi Kumigashira,Yuichi Yamasaki,Hironori Nakao,Youichi Murakami,Takayoshi Katase,Toshio Kamiya,Hiroki Wadati","Photoinduced transient states of antiferromagnetic orderings in La1/3Sr2/3FeO3 and SrFeO3-δ thin films observed through time-resolved resonant soft x-ray scattering",,"New J. Phys.",,"Vol. 24",,"pp. 043012",2022,Apr.
"Xinyi He,Jinshuai Chen,Takayoshi Katase,Makoto Minohara,Keisuke Ide,Hidenori Hiramatsu,Hiroshi Kumigashira,Hideo Hosono,Toshio Kamiya","High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate",,"ACS Appl. Mater. Interfaces",,"  14",,"  18682?18689",2022,Apr.
"Akihiro Shiraishi,Shigeru Kimura,Xinyi He,Naoto Watanabe,Takayoshi Katase,Keisuke Ide,Makoto Minohara,Kosuke Matsuzaki,Hidenori Hiramatsu,Hiroshi Kumigashira,Hideo Hosono,Toshio Kamiya","Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors",,"INORG. CHEM.",,"  61",,"  6650−6659",2022,Apr.
"Kaiwen Li,Atsushi Shimizu,Xinyi He,Keisuke Ide,Kota Hanzawa,Kosuke Matsuzaki,Takayoshi Katase,Hidenori Hiramatsu,Hideo Hosono,Q. Zhang,Toshio Kamiya","Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate",,"ACS Appl. Electron. Mater.",,"Vol. 4",,"pp. 2026",2022,Apr.
"片瀬貴義,神谷利夫","温度差で発電する酸化物熱電材料 人工構造を利用した、熱電変換特性を高める新たなアプローチ",,"クリーンエネルギー",,"Vol. 31","No. 3","pp. 37",2022,Mar.
"Xinyi He,Haoyun Zhang,Takumi Nose,Takayoshi Katase,Terumasa Tadano,Keisuke Ide,Shigenori Ueda,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution",,"Advanced Science",,"Vol. 9",,"pp. 202105958",2022,Mar.
"Makoto Minohara,Naoto Kikuchi,TKouhei Tsukada,Yuka,Dobashi,Akane Samizo,Keishi Nishio,Xinyi He,Takayoshi Katase,Toshio Kamiya,Yoshihiro Aiura","Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7",,"Materials & Design",,"Vol. 216",,"pp. 110549",2022,Mar.
"片瀬貴義,神谷利夫","結晶構造の次元性を人為的に制御し,巨大な電気抵抗スイッチを実現",,"自動車技術「超の世界」",,"Vol. 75","No. 12","pp. 118",2022,Feb.
"Yusaku Nishimura,Xinyi He,Takayoshi Katase,Terumasa Tadano,Keisuke Ide,Suguru Kitani,Kota Hanzawa,Shigenori Ueda,Hidenori Hiramatsu,Hitoshi Kawaji,Hideo Hosono,Toshio Kamiya","Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal Structure Transition in Nonequilibrium (Pb1−xSnx)Se",,"Advanced Electronic Materials",,"  32",,"  2200024 (1 of 9)",2022,Feb.
"Liwei Li,Keisuke Ide,Takayoshi Katase,Hideo Hosono,Toshio Kamiya","Local bonding structures in amorphous oxide semiconductors studied by DFT and machine-learning potential","第60回日本セラミックス協会 セラミックス基礎科学討論会",,,,,,2022,Jan.