"若林整","新版 ULSIデバイス・プロセス技術, 菅野卓雄(監修), 伊藤隆司(編著), 電子情報通信学会, 2013-05, A5判, 定価(本体5,600円+税)",,"電子情報通信学会誌","一般社団法人電子情報通信学会","Vol. 96","No. 11","pp. 897",2013,Nov.
"宋 ?漢,Kazuki Matsumoto,Kuniyuki KAKUSHIMA,片岡好則,西山彰,杉井信之,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation","ECS 224nd Meeting","ECS Transactions",,"Vol. 58","No. 7","pp. 87-91",2013,Oct.
"Shuhei Hosoda,K. Tuokedaerhan,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Reliability of La-silicate MOS capacitors with tungsten carbide gate electrode for scaled EOT","ECS 224nd Meeting","ECS Transactions",,"Vol. 58","No. 7","pp. 61-64",2013,Oct.
"Shuhei Hosoda,Kamale Tuokedaerhan,Kuniyuki Kakushima,Yoshinori Kataoka,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kenji Natori,Hiroshi Iwai","Reliability of La-Silicate Mos Capacitors With Tungsten Carbide Gate Electrode","224th ECS Meeting in San Francisco",,,,,,2013,Oct.
"Hiroshi Oomine,DARYOUSH ZADEH,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Electrical characterization of atomic layer deposited La2O3 films on In0.53Ga0.47AAs substrates","ECS 224nd Meeting","ECS Transactions",,"Vol. 58","No. 7","pp. 385-389",2013,Oct.
"Taichi Inamura,佐々木亮人,青木克明,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A stacked sputtered process for β-FeSi2 formation","ECS 224nd Meeting","ECS Transactions",,,,,2013,Oct.
"Taichi Inamura,佐々木亮人,青木克明,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A stacked sputtered process for β-FeSi2 formation","ECS 224nd Meeting","ECS Transactions",,,,,2013,Oct.
""K. Tuokedaerhan","R. Tan,K. Kakushima","P. Ahmet","Y. Kataoka","A. Nishiyama","N. Sugii","H. Wakabayashi","K. Tsutsui","K. Natori","T. Hattori","H. Iwai"","Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application",,"Applied Physics Letters (APL)",,"Vol. 103",,,2013,Sept.
"若林整","シリコントランジスタのあゆみと将来",,"應用物理","応用物理学会","Vol. 82","No. 4","pp. 292-298",2013,Apr.
"長谷川明紀,呉研,宋 ?漢,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","低バンドギャップ、バンドオフセットを持つ半導体シリサイド/Si接合によるトンネルFET特性向上","第74回応用物理学会秋季学術講演会",,,,,,2013,
"宗清修,川那子高暢,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","ショットキーゲート材料によるAlGaN/GaNの容量電圧特性への影響","第74回応用物理学会秋季学術講演会",,,,,,2013,
"元木雅章,吉原亮,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Pを導入したNiSi2電極を用いたn-Ge基板の電流電圧特性の熱処理依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"譚錫昊,岡本真里,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","AlGaN/GaN上のTiSi2電極によるコンタクトの温度依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"劉 璞誠,米澤宏昭,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","AlGaNのドライエッチングへのBcl3の影響に関する研究","第74回応用物理学会秋季学術講演会",,,,,,2013,
"嘉藤貴史,稲村太一,佐々木 亮人,青木 克明,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Fe層とSi層の積層スパッタにより形成されたβ-FeSi2のキャリア密度に関する研究","第74回応用物理学会秋季学術講演会",,,,,,2013,
"松川佳弘,岡本真里,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋,齋藤渉","AlGaN/GaN上のTiC電極の電流電圧特性の熱処理温度依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"大橋匠,若林整,角嶋邦之,杉井信之,西山彰,片岡好則,名取研二,筒井一生,岩井洋","単層MoS2チャネルを用いたn-MOSFETの性能見積もり","[第74回応用物理学会秋季学術講演会",,,,,,2013,
"神谷真行,寺山一真,武井優典,齋藤 渉,角嶋邦之,若林整,片岡好則,筒井一生,岩井洋","AlGaN/GaN HEMTへの凹凸AlGaN層導入による２次元電子ガス濃度分布評価および低抵抗コンタクト形成の可能性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"武井優典,神谷真行,寺山一真,米澤宏昭,齋藤 渉,筒井一生,角嶋邦之,若林整,片岡好則,岩井洋","AlGaN/GaN系HEMTにおけるコンタクト特性のAlGaN層厚依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"米澤宏昭,中島  昭,西澤 伸一,大橋 弘通,筒井一生,角嶋邦之,若林整,岩井洋","AlGaN/GaN系pチャンネルHFETの製作","第74回応用物理学会秋季学術講演会",,,,,,2013,
"石川昂,小路智也,角嶋邦之,若林整,片岡好則,西山彰,杉井信之,筒井一生,名取研二,岩井洋","チャージポンピング法を用いた三次元Si構造の界面準位密度測定","第74回応用物理学会秋季学術講演会",,,,,,2013,
"unknown unknown,shinichi kano,竇春萌,Kuniyuki KAKUSHIMA,パールハットアヘメト,片岡好則,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","A Proposal of a Forming-Free Resistive Switching Memory based on Breakdown and Anodic Reoxidation of thin SiO2 on NiSi2 Electrode using CeOx Buffer Layer","2013 International Conference on Solid State Devices and Materials(SSDM)",,,,,,2013,
"ダリューシュザデ,Hiroshi Oomine,Kuniyuki KAKUSHIMA,片岡好則,西山彰,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Scalable La-silicate Gate Dielectric on InGaAs Substrate with High Thermal Stability and Low Interface State Density","2013 International Conference on Solid State Devices and Materials(SSDM)",,,,,,2013,
"Takamasa Kawanago,Kuniyuki KAKUSHIMA,片岡好則,Akira Nishiyama,Nobuyuki Sugii,Hitoshi Wakabayashi,KAZUO TSUTSUI,Kenji Natori,HIROSHI IWAI","Advantage of TiN Schottky Gate over Conventional Ni for Improved Electrical Characteristics in AlGaN/GaN HEMT","ESSDERC 2013",,,,,,2013,
"Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,KAZUO TSUTSUI,HIROSHI IWAI","Interface State Density of Passivation/Nanowire Interface","The 1st International Symposium on Nano-Wire Si Solar Cells/ MEXT “FUTURE-PV Innovation” Project",,,,,,2013,
"Hitoshi Wakabayashi,Schruefer, K.","Foreword: Welcome to the 2013 symposium on VLSI technology",,"Digest of Technical Papers - Symposium on VLSI Technology",,,,,2013,
"Hitoshi Wakabayashi","Progress and prospects of silicon transistors based on junction technologies",,"Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013",,,,"pp. 98-103",2013,
"宋 ?漢,松本一輝,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,服部健雄,岩井洋","Niシリサイドナノワイヤ抵抗率のNi膜厚依存性","第74回応用物理学会秋季学術講演会",,,,,,2013,
"鹿国強,大嶺洋,ｻﾞﾃﾞﾊｻﾝ ﾀﾞﾘﾕｰｼﾕ,角嶋邦之,西山彰,杉井信之,片岡好則,若林整,筒井一生,名取研二,岩井洋","ALD堆積条件によるLa2O３/In0.53Ga0.47Asキャパシタの電気特性への影響","第74回応用物理学会秋季学術講演会",,,,,,2013,
"今村浩章,稲村太一,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","Krガスを用いた積層シリサイド化スパッタプロセスにより形成したNiSi2の薄膜評価","第74回応用物理学会秋季学術講演会",,,,,,2013,
"岡本真里,松川佳弘,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","TiSi2電極の熱処理によるAlGaN/GaNへのコンタクト特性の変化","第74回応用物理学会秋季学術講演会",,,,,,2013,
"小路智也,石川昂,角嶋邦之,片岡好則,西山彰,杉井信之,若林整,筒井一生,名取研二,岩井洋","チャージポンピング法を用いた立体Si構造の絶縁膜界面準位の位置推定","第74回応用物理学会秋季学術講演会",,,,,,2013,
"中村嘉基,細田修平,Tuokedaerhan Kamale,角嶋邦之,片岡好則,西山彰,若林整,杉井信之,筒井一生,名取研二,岩井洋","W2Cゲート電極とLa-silicateゲート絶縁膜を用いたMOSキャパシタの信頼性評価","第74回応用物理学会秋季学術講演会",,,,,,2013,