"Y. Miyamoto,W. Lin,S.Iwata,K. Fukuda","Steep sub-threshold slope in short-channel InGaAs TFET  (Invited)","The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2016)",,,,,"  A6-I-01",2016,July
"Wenbo Lin,Shinjiro Iwata,Koichi Fukuda,Yasuyuki Miyamoto","Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration",,"Japanese Journal of Applied Physics",,"Vol. 55","No. 7","pp. 070303",2016,June
"岩田 真次郎,大橋 一水,林 文博,福田 浩一,宮本 恭幸","GaAsSb/InGaAsダブルゲートンネルFET におけるソースおよびドレイン不純物濃度依存性",,"電気学会論文誌C",,"Vol. 136","no. 4","pp. 467-473",2016,Apr.
"林 文博,岩田 真次郎,福田 浩一,宮本 恭幸","短チャネルTFET におけるソース-ドレイン間直接トンネリングのオフ電流への寄与","第63回応用物理学会春季学術講演会",,,,,,2016,Mar.