"Junghwan Kim,Norihiko Miyokawa,Takumi Sekiya,Keisuke Ide,Yoshitake Toda,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Ultrawide band gap amorphous oxide semiconductor, Ga?Zn?O",,"Thin Solid Films",,"Vol. 614",,"pp. 84-89",2016,Sept.
"Haochun Tang,Keisuke Ide,Hidenori Hiramatsu,Shigenori Ueda,Naoki Ohashi,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Effects of thermal annealing on elimination of deep defects in amorphous In?Ga?Zn?O thin-film transistors",,"Thin Solid Films",,"Vol. 614",,"  73-78",2016,
"Junghwan KIM,Norihiko MIYOKAWA,Keisuke IDE,Hidenori HIRAMATSU,Hideo HOSONO,Toshio KAMIYA","Transparent amorphous oxide semiconductor thin film phosphor, In?Mg?O:Eu",,"J. Cerm. Soc. Jpn.",,"Vol. 124",,"pp. 532-535",2016,
"Christian A. Niedermeier,Sneha Rhode,Sarah Fearn,Keisuke Ide,Michelle A. Moram,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Solid phase epitaxial growth of high mobility La:BaSnO<sub>3</sub> thin films co-doped with interstitial hydrogen",,"Appl. Phys. Lett.",,"Vol. 108",,"pp. 172101-1 -5",2016,
"Fan-Yong Ran,Zewen Xiao,Hidenori Hiramatsu,Keisuke Ide,Hideo Hosono,Toshio Kamiya","SnS thin films prepared by H2S-free process and its p-type thin film transistor",,"AIP Adv.",,"Vol. 6",,"pp. 015112-1 - 6",2016,
"Junghwan Kim,Norihiko Miyokawa,Keisuke Ide,Yoshitake Toda,Hidenori Hiramatsu,Hideo Hosono,Toshio Kamiya","Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor",,"AIP Advances",,"Vol. 6",,"p. 015106",2016,