"Mitsuki Nishizawa,T. Hoshii,H. Wakabayashi,K. Tsutsui,I. Mizushima,T. Yoda,K. Kakushima","Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer","International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"Si-Meng Chen,Sung-Lin Tsai,Kazuto Mizutani,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation","International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"Sho Sasaki,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Observation of ferroelectricity in atomic layer deposited AlN film","International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"R. Shibukawa,S. -L. Tsai,T. Hoshii,H. Wakbayashi,K. Tsutsui,K. Kakushima","Thermal stability of ferroelectric AlScN films","International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"Kazuto Mizutani,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films","International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-",,,,,,2021,Nov.
"小森 勇太,木村 安希,星井 拓也,宮野 清孝,津久井 雅之,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/AlN/GaN構造におけるキャリア散乱要因のAlN層厚依存性","第82回応用物理学会秋季学術講演会",,,,,,2021,Sept.
"Takamasa Kawanago,Takahiro Matsuzaki,Ryosuke Kajikawa,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd  Down to 0.5 V Consisting of WSe2  n/p FETs","International Conference on Solid State Devices and Materials",,,,,,2021,Sept.
"小森 勇太,星井 拓也,宮野 清孝,津久井 雅之,水島 一郎,依田 孝,角嶋 邦之,若林 整,筒井 一生","InAlN/AlN/GaN構造中2DEGにおける移動度のキャリア濃度依存性","第69回応用物理学会春季学術講演会",,,,,,2021,Sept.
"Masahiro Watanabe,Naoyuki Shigyo,Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Katsumi Satoh,Tomoko Matsudai,Takuya Saraya,Iriya Muneta,Hitoshi Wakabayashi,Akira Nakajima,Shin-ichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices","IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)","Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)",,,,"pp. 217-219",2021,Apr.
"Sung-Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Tien-Kan Chung,Edward Yi Chang,Kuniyuki Kakushima","On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films",,"Japanese Journal of Applied Physics (JJAP) （SSDM特集号）",,"Vol. 60",,"Page SBBA05",2021,Apr.
"筒井一生,濱田拓也,高山 研,金 相佑,星井拓也,角嶋邦之,若林 整,高橋言緒,井手利英,清水三聡","選択成長法を用いたGaN 系FinFET","電気学会電子デバイス研究会",,,,,,2021,Mar.
"竹内走一郎,古賀峻丞,田中晶貴,孫澤旭,橋本由介,星井拓也,筒井一生,松下智裕","AsおよびBを共ドープしたSi結晶中に存在するドーパントの構造解析","日本物理学会第76回年次大会",,,,,,2021,Mar.
"Sung-Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Tien-Kan Chung,Edward Y. Chang,Kuniyuki Kakushima","Publisher's Note: “Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering” [Appl. Phys. Lett. 118, 082902 (2021)]",,"Applied Physics Letters",,,,,2021,Mar.
"Junji Kataoka,Sung-Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","A possible origin of the large leakage current in ferroelectric Al1-xScxN films",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 60",,"Page 30907",2021,Feb.
"S-L. Tsai,T. Hoshii,H. Wakabayashi,K. Tsutsui,T-K. Chung,E. Chang,K. Kakushima","Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering",,"Applied Physics Letters",,"Vol. 118","No. 8","Page 82902",2021,Feb.
"Jinhan Song,Atsuhiro Ohta,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer",,"Japanese Journal of Applied Physics (JJAP) (Rapid Communication)",,"Vol. 60",,"Page 30901",2021,Feb.
"Junji Kataoka,Sung-Lin Tsai,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui","N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation",,"Applied Physics Express (APEX)",,,"No. 2","pp. 21002",2021,Jan.