"T. Gotow,M. Mitsuhara,T. Hoshi,H. Sugiyama,M. Takenaka,S. Takagi","Performance enhancement of p-GaAsSb/InGaAs hetero-junction vertical TFETs by using abrupt source impurity profile",,"Journal of Applied Physics",,"  126","  214502",,2019,Dec.
"大澤幸希,岩木拓也,遠藤勇輝,平岡瑞穂,岸本尚之,林拓也,渡邊一世,山下良美,原紳介,後藤高寛,笠松章史,遠藤聡,藤代博記","歪AlInSb/AlInSbステップバッファを用いたGaInSb n-チャネルHEMT","電子デバイス研究会 テラヘルツ応用システム研究会",,,,,,2019,Dec.
"岩木拓也,遠藤勇輝,平岡瑞穂,岸本尚之,林拓也,渡邊一世,山下良美,原紳介,後藤高寛,笠松章史,遠藤聡,藤代博記","歪Al0.40In0.60Sb/Al0.25In0.75Sbステップバッファを用いたGaInSb n-チャネルHEMT",,"信学技報",,"vol. 119","no. 353","pp. 29-32",2019,Dec.
"S. Takagi,K. Kato,D. H. Ahn,T. Gotow,R. Takaguchi,T.-E. Bae,K. Toprasertpong,M. Takenaka","Tunneling FET Device Technology for Ultra-Low Power Integrated Circuits","236th Electrochemical Society (ECS) Meeting",,,,,,2019,Oct.
"S. Takagi,K. Kato,D. H. Ahn,T. Gotow,R. Takaguchi,T.-E. Bae,K. Toprasertpong,M. Takenaka","Tunneling FET Device Technology for Ultra-Low power integrated Circuits",,"ECS Transactions",,"  92","  4","  59-69",2019,Oct.
"M. Hiraoka,Y. Endoh,K. Osawa,N. Kishimoto,T. Hayashi,R. Machida,I. Watanabe,Y. Yamashita,S. Hara,T. Gotow,A. Kasamatsu,A. Endoh,H. I. Fujishiro","Improved Electron Transport Properties of GaInSb Quantum Well Channel Using Strained-AlInSb/AlInSb Stepped Buffer",,"Physica status solidi A",,"  1900516",,,2019,Oct.
"平岡 瑞穂,遠藤 勇輝,岸本 尚之,林 拓也,剣持 雄太,町田 龍人,渡邊 一世,山下 良美,原 紳介,後藤 高寛,笠松 章史,遠藤 聡,藤代 博記","Al0.40In0.60Sb/Al0.25In0.75Sbステップバッファを用いた歪Ga1-xInxSb量子井戸チャネルの電子輸送特性","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"平岡 瑞穂,遠藤 勇輝,大澤 幸希,岸本 尚之,林 拓也,町田 龍人,渡邊 一世,山下 良美,原 紳介,後藤 高寛,笠松 章史,遠藤 聡,藤代 博記","歪Al0.40In0.60Sb/Al1-yInySbステップバッファを用いたGa1-xInxSb量子井戸チャネルの電子輸送特性","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"林 拓也,大坪 拓史,岸本 尚之,遠藤 勇輝,平岡 瑞穂,渡邊 一世,山下 良美,原 紳介,後藤 高寛,笠松 章史,遠藤 聡,藤代 博記","歪超格子バッファがInSb HEMTの表面形態と電気的特性に与える影響","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"岸本 尚之,熊坂 昂之輔,遠藤 勇輝,林 拓也,平岡 瑞穂,白井 脩策,吉田 直史,町田 龍人,渡邊 一世,山下 良美,原 紳介,後藤 高寛,笠松 章史,藤代 博記,遠藤 聡","チャネルスケーリングがSb系HEMT構造の電子輸送特性に及ぼす影響","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"K. Osawa,T. Iwaki,Y. Endoh,M. Hiraoka,N. Kishimoto,T. Hayashi,I. Watanabe,Y. Yamashita,S. Hara,A. Kasamatsu,T. Gotow,A. Endoh,H. I. Fujishiro","GaInSb n-Channel HEMTs with High AlInSb Barrier","13th Topical Workshop on Heterostructure Microelectronics",,,,,,2019,Aug.
"Takahiro Gotow,Manabu Mitsuhara,Takuya Hoshi,Hiroki Sugiyama,Mitsuru Takenaka,Shinichi Takagi","Improvement of p-type GaAs0.51Sb0.49 metal-oxide-semiconductor interface properties by using ultrathin In0.53Ga0.47As interfacial layers",,"Journal of Applied Physics",,"  125","  214504",,2019,June
"Masachi Yamaguchi,Takahiro Gotow,Mitsuru Takenaka,Shinichi Takagi","Drive current enhancement of Si MOSFETs by using anti-ferroelectric gate insulators",,"Japanese Journal of Applied Physics",,"  58","  SBBA15",,2019,Mar.
"高木信一,加藤公彦,安大煥,後藤高寛,松村亮,高口遼太郎,竹中充","材料エンジニアリングによるトンネル電界効果トランジスタの高性能化",,"電子情報通信学会論文誌 C",,"Vol. 102-C","No. 3","pp. 61-69",2019,Mar.
"満原学,星拓哉,杉山弘樹,後藤高寛,竹中充,高木信一","InP基板上引張歪GaAsSbとInGaAsの膜厚増加による結晶性劣化の比較","第66回応用物理学会春季学術講演会",,,,,,2019,Mar.
"後藤高寛,藤川紗千恵,藤代博記,小倉睦郎,安田哲二,前田辰郎","Al2O3/GaSb MOS界面構造における絶縁膜堆積前処理の検討","第61回 応用物理学会春季学術講演会",,,,,,2019,