"Tomoya Aota,Akihiro Hayasaka,isao makabe,Shigeki Yoshida,Takahiro Gotow,YASUYUKI MIYAMOTO","Wet Etching for Isolation of N-polar GaN HEMT Structure by Electrodeless Photo-Assisted Electrochemical Reaction","33rd International Microprocesses and Nanotechnology Conference (MNC 2020)",,,,,,2020,Nov.
"Manabu Mitsuhara,Takahiro Gotow,Takuya Hoshi,Hiroki Sugiyama,Mitsuru Takenaka,Shinichi Takagi","Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP(001) substrates",,"Journal of Crystal Growth",,"  555","  125970",,2020,Nov.
"Β“c ’q–η,‘β –Ύ‘Χ,αΑ•Η —E•v,‹g“c ¬‹P,Œγ“‘ ‚Š°,‹{–{ ‹±K","N‹Ι«GaN HEMT\‘’‚Ε‚Μ–³“d‹ΙPECƒGƒbƒ`ƒ“ƒO","‘ζ81‰ρ ‰ž—p•¨—Šw‰οH‹GŠwpu‰‰‰ο",,,,,,2020,Sept.
"Yasuyuki Miyamoto,Takahiro Gotow","Simulation of short channel effect in GaN HEMT with a combined thin undoped channel and semi-insulating layer",,"IEICE Transactions on Electronics",,"Vol. 103.C",,"Page 304-307",2020,June
"–Ρ—˜ ‹§—T,‘β –Ύ‘Χ,αΑ•Η —E•v,‹g“c ¬‹P,Œγ“‘ ‚Š°,‹{–{ ‹±K","N‹Ι«GaN HEMT\‘’‚Ι‚¨‚―‚ιƒRƒ“ƒ^ƒNƒg’οR‚Μ’αŒΈ","‘ζ67‰ρ ‰ž—p•¨—Šw‰ο t‹GŠwpu‰‰‰ο",,,,,"  12p-B401-12",2020,Mar.