"星野 麻衣子,宇佐見 遼也,村上 寛太,渡辺正裕","Si/CaF2 四重障壁共鳴トンネル構造を用いた抵抗変化メモリ素子の室温パルス応答特性","第84回応用物理学会学術講演会",,,,," 12-077",2023,Sept. "杉山 裕汰,鈴木 飛雄馬,范 志遠,渡辺 正裕","CaF2/Si ヘテロ構造を用いた近赤外波長量子カスケードレーザの低電界化に向けた構造提案","第84回応用物理学会学術講演会",,,,," 03-332",2023,Sept. "村上 寛太,宇佐見 遼也,星野 麻衣子,渡辺 正裕","Si/CaF2 n型三重障壁共鳴トンネルダイオードの電流密度向上","第84回応用物理学会学術講演会",,,,," 12-220",2023,Sept. "宇佐見 遼也,星野 麻衣子,村上 寛太,渡辺 正裕","CaF2埋め込み構造を用いたp型 Si/CaF2二重障壁共鳴トンネルダイオードのバレー電流低減","第84回応用物理学会学術講演会",,,,," 12-221",2023,Sept. "Gensai Tei,Youhei Kiyanagi,Long Liu,Masahiro Watanabe","Near-infrared (λ ~ 1.2 ?m) intersubband electroluminescence in Si/CaF2 quantum cascade structures",,"Japanese Journal of Applied Physics","The Japan Society of Applied Physics","vol. 62",,,2023,June "Gensai Tei,Long Liu,Masahiro Watanabe","Design and analysis of Si/CaF2 near-infrared (λ~1.7 μm) DFB quantum cascade laser for silicon photonics",,"IEICE Transactions on Electronics","IEICE","Vol. E106-C","No. 5",,2023,May "星野 麻衣子,伊藤 滉悟,鈴木 優輔,宇佐見 遼也,村上 寛太,鄭 源宰,渡辺 正裕","Si/CaF2 四重障壁共鳴トンネル構造を用いた抵抗変化メモリ素子の室温スイッチング特性","第70回応用物理学会春季学術講演会",,,,,,2023,Mar. "Long Liu,Gensai Tei,Masahiro Watanabe","Design, fabrication, and evaluation of waveguide structure using Si/CaF2 heterostructure for near- and mid- infrared silicon photonics",,"IEICE Transactions on Electronics",,"Vol. E106-C","No. 1",,2023,Jan. "伊藤 滉悟,鈴木 優輔,星野 麻衣子,宇佐見 遼也,村上 寛太,渡辺正裕","CaF2埋め込み構造によるSi/CaF2 p型共鳴トンネルダイオード のリーク電流低減","第83回応用物理学会学術講演会",,,,," 12-253",2022,Sept. "鈴木 優輔,伊藤 滉悟,齊藤 雅高,星野 麻衣子,宇佐見 遼也,村上 寛太,渡辺 正裕","サーファクタントエピタキシー法により形成した Si/CaF2二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性","第83回応用物理学会学術講演会",,,,," 12-254",2022,Sept. "鄭 源宰,劉 龍,齊藤 雅高,松浦 耕洋,杉山 裕汰,渡辺 正裕","Si/CaF2ヘテロ構造を用いた波長1.6 ?m帯量子カスケードレーザの理論解析","第83回応用物理学会学術講演会",,,,," 03-477",2022,Sept. "齊藤雅高,鄭 源宰,劉 龍,小柳 陽平,菅原 大暉,渡辺 正裕","CaF2上に成膜したSi薄膜の表面平坦性に対するAs照射効果","第69回応用物理学会春季学術講演会","第69回応用物理学会春季学術講演会 講演予稿集 (青山学院大学 相模原キャンパス ＆ オンライン)",,,,"p. 12-202",2022,Mar. "菅原 大暉,劉 龍,鄭 源宰,小柳 陽平,北村 研太,渡辺 正裕","p型単一障壁トンネルダイオード及び2重障壁共鳴トンネルダイオードを用いたSi/CaF2界面における価電子帯障壁高さ(?Ev)の評価","第69回応用物理学会春季学術講演会","第69回応用物理学会春季学術講演会 講演予稿集 (青山学院大学 相模原キャンパス ＆ オンライン)",,,,"p. 12-046",2022,Mar. "北村 研太,鄭 源宰,劉 龍,小柳 陽平,菅原 大暉,渡辺 正裕","Si/CaF2ヘテロ構造を用いた分布帰還型導波路の設計とグレーティング構造形成プロセス","第82回応用物理学会学術講演会","第82回応用物理学会秋季学術講演会 講演予稿集 (2021 ハイブリッド開催（名城大学 天白キャンパス ＆ オンライン）)",,,,"p. 12-309",2022, "Masahiro Watanabe","TCAD simulation of trench-gate IGBTs for prediction of carrier lifetime requirements for future scaled devices","2021 IEEE 14th International Conference on ASIC (ASICON 2021)","Proceedings of the 2021 IEEE 14th International Conference on ASIC (ASICON 2021)",,,,,2021,Oct. "Gensai Tei,Kenta Kitamura,Long Liu,Yohei Koyanagi,Daiki Sugawara,MASAHIRO WATANABE","Proposal and Analysis of Si/CaF2 Distributed Feedback Waveguide for near- and mid- infrared applications","26th MICROOPTICS CONFERENCE (MOC2021)",,,,,,2021,Sept. "菅原 大暉,劉 龍,鄭 源宰,小柳 陽平,北村 研太,渡辺 正裕","単一障壁p型トンネルダイオードを用いたSi/CaF2界面における価電子帯障壁高さ(ΔEv)の評価","第82回応用物理学会学術講演会","第82回応用物理学会秋季学術講演会 講演予稿集 (2021 ハイブリッド開催（名城大学 天白キャンパス ＆ オンライン）)",,,,"p. 12-311",2021,Sept. "Masahiro Watanabe,Naoyuki Shigyo,Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Katsumi Satoh,Tomoko Matsudai,Takuya Saraya,Iriya Muneta,Hitoshi Wakabayashi,Akira Nakajima,Shin-ichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices","IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)","Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)",,,,"pp. 217-219",2021,Apr. "佐藤穂波,熊谷佳郎,冨澤勘太,金子拓海,渡辺正裕","Si/CaF2 p型三重障壁共鳴トンネルダイオードの室温微分負性抵抗特性","第68回応用物理学会春季学術講演会","第68回応用物理学会春季学術講演会 講演予稿集 (2021 オンライン開催)",,,,"p. 12-155",2021,Mar. "Gensai Tei,Long Liu,Yohei Koyanagi,Masahiro Watanabe","Room temperature near-infrared electroluminescence of Si/CaF2 quantum cascade laser structures grown on an SOI substrate",,"Japanese Journal of Applied Physics",,"vol. 60","no. SBBE03","pp. 1-5",2021,Mar. "小柳陽平,鄭 源宰,劉 龍,渡辺正裕","CaF2/Siヘテロ構造を用いた近赤外波長量子カスケードレーザの理論解析","第81回応用物理学会秋季学術講演会",,"応用物理学会",,,"p. 12-015",2020,Sept. "Gensai Tei,Liu Long,Yohei Koyanagi,Masahiro Watanabe","Room Temperature Near Infrared Electroluminescence of Si/CaF2 Quantum Cascade Laser Structures grown on SOI Substrate","The 2020 International Conference on Solid State Devices and Materials",,"The Japan Society of Applied Physics",,,"pp. 301-302",2020,Sept. "Kiyoshi Takeuchi,Munetoshi Fukui,Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Shinichi Suzuki,Yohichiroh Numasawa,Naoyuki Shigyo,Kuniyuki Kakushima,Takuya Hoshii,Kazuyoshi Furukawa,Masahiro Watanabe,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Atsushi Ogura,Wataru Saito,Shin-ichi Nishizawa,Masanori Tsukuda,Ichiro Omura,Hiromichi Ohashi,Toshiro Hiramoto","Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs",,"IEEE Trans. On Semiconductor Manufactureing",,"Vol. 33","No. 2","pp. 159-165",2020,May "Yoshiro Kumagai,Satoshi Fukuyama,Hiroki Tonegawa,Kizashi Mikami,Kodai Hirose,Kanta Tomizawa,Kensuke Ichikawa,Masahiro Watanabe","Negative differential resistance of CaF2/Si double barrier resonant tunneling diodes fabricated using plasma etching mesa isolation process",,"Japanese Journal of Applied Physics","The Japan Society of Applied Physics","vol. 59",," SIIE03-1",2020,Apr. "金子 拓海,熊谷 佳郎,廣瀬 皓大,利根川啓希,三上 萌,冨澤 勘太,佐藤穂波,渡辺正裕","CaF2/Si/CaF2共鳴トンネル量子井戸構造を用いた抵抗スイッチング特性の理論解析","第67回応用物理学会春季学術講演会",,"応用物理学会",,,"p. 11-140",2020,Mar. "佐藤 穂波,熊谷 佳郎,三上 萌,利根川 啓希,廣瀬 皓大,冨澤 勘太,金子 拓海,渡辺 正裕","Si/CaF2 p型三重障壁共鳴トンネルダイオードの室温微分負性抵抗特性","第67回応用物理学会春季学術講演会",,"応用物理学会",,,"p. 11-139",2020,Mar. "渡辺正裕,執行直之,星井拓也,古川和由,角嶋邦之,佐藤克己,末代知子,更屋拓哉,高倉俊彦,伊藤一夫,福井宗利,鈴木慎一,竹内 潔,宗田伊里也,若林 整,中島 昭,西澤伸一,筒井一生,平本俊郎,大橋弘通,岩井洋","トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション","電子情報通信学会 SDM(シリコン材料・デバイス)研究会","電子情報通信学会技術研究報告 = IEICE technical report : 信学技報","電子情報通信学会","Vol. 119","No. 273","pp. 45-48",2019,Nov. "Yoshiro Kumagai,Satoshi Fukuyama,Hiroki Tonegawa,Kizashi Mikami,Kodai Hirose,Kanta Tomizawa,Keisuke Ichikawa,Masahiro Watanabe","Negative Differential Resistance in CaF2/Si Double Barrier Resonant Tunneling Diodes via Plasma Etching Mesa Isolation process","32nd International Microprocesses and Nanotechnology Conference (MNC2019)",,"The Japan Society of Applied Physics",,,,2019,Oct. "T. Hiramoto,T. Saraya,K. Itou,T. Takakura,M. Fukui,S. Suzuki,K. Takeuchi,M. Tsukuda,Y. Numasawa,K. Satoh,T. Matsudai,W. Saito,K. Kakushima,T. Hoshii,K. Furukawa,M. Watanabe,N. Shigyo,H. Wakabayashi,K. Tsutsui,H. Iwai,A. Ogura,S. Nishizawa,I. Omura,H. Ohash","Switching of 3300V Scaled IGBT by 5V Gate Drive","ASICON (International Conference on ASIC)",,,,,,2019,Oct. "冨澤 勘太,熊谷 佳郎,利根川 啓希,三上 萌,廣瀬 皓大,金子 拓海,佐藤 穂波,渡辺 正裕","CaF2/Si/SiO2二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性","第80回応用物理学会学術講演会",,"応用物理学会",,,"p. 12-341",2019,Sept. "利根川 啓希,熊谷 佳郎,三上 萌,廣瀬 皓大,冨澤 勘太,金子 拓海,佐藤 穂波,渡辺 正裕","Si/CaF2三重障壁共鳴トンネルダイオードの高ピーク電流密度を有する室温微分負性抵抗特性","第80回応用物理学会学術講演会",,"応用物理学会",,,"p. 12-340",2019,Sept. "Long Liu,Soichiro Ono,Gensai Tei,Masahiro Watanabe","Design, fabrication, and evaluation of waveguide structure for Si/CaF2 quantum-well intersubband transition lasers","The 2019 International Conference on Solid State Devices and Materials",,,,,,2019,Sept. "鄭 源宰,劉 龍,小柳 陽平,渡辺 正裕","CaF2/Siヘテロ構造を用いた近赤外波長量子カスケードレーザの作製プロセス","第80回応用物理学会学術講演会",,"応用物理学会",,,"p. 12-344",2019,Sept. "廣瀬 皓大,熊谷 佳郎,利根川 啓希,冨澤 勘太,金子 拓海,佐藤 穂波,渡辺 正裕","Si/CaF2バイポーラ二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性","第80回応用物理学会学術講演会",,"応用物理学会",,,"p. 12-343",2019,Sept. "三上 萌,熊谷 佳郎,廣瀬 皓大,冨澤 勘太,利根川 啓希,金子 拓海,佐藤 穂波,渡辺 正裕","原子層薄膜CaF2/Siヘテロ構造を用いたホール駆動共鳴トンネルダイオードの室温微分負性抵抗特性","第80回応用物理学会学術講演会",,"応用物理学会",,,"p. 12-342",2019,Sept. "更屋 拓哉,伊藤 一夫,高倉 俊彦,福井 宗利,鈴木 慎一,竹内 潔,附田 正則,沼沢 陽一郎,佐藤 克己,末代 知子,齋藤 渉,角嶋邦之,星井 拓也,古川 和由,渡辺正裕,執行 直之,筒井一生,岩井洋,小椋 厚志,西澤 伸一,大村 一郎,大橋 弘通,平本 俊郎","5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス)",,"電子情報通信学会技術研究報告 = IEICE technical report : 信学技報","電子情報通信学会","Vol. 118","No. 429","pp. 39-44",2019,Aug. "Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Masanori Tsukuda,Yohichiroh Numasawa,Katsumi Satoh,Tomoko Matsudai,Wataru Saito,Kuniyuki Kakushima,Takuya Hoshii,Kazuyoshi Furukawa,Masahiro Watanabe,Naoyuki Shigyo,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Atsushi Ogura,Shin-Ichi Nishizawa,Ichiro Omura,Hiromichi Ohashi,Toshiro Hiramo","3300V Scaled IGBTs Driven by 5V Gate Voltag","31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019)",,,,,,2019,May "Masahiro Watanabe,Naoyuki Shigyo,Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Katsumi Satoh,Tomoko Matsudai,Takuya Saraya,Toshihiro Takakura,Kazuo Itou,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Iriya Muneta,Hitoshi Wakabayashi,Akira Nakajima,Shin-ichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs","31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019)",,,,,,2019,May "三上 萌,福山 聡史,渡辺 正裕","原子層薄膜CaF2/Siヘテロ構造を用いたp 型共鳴トンネルダイオードの室温微分負性抵抗特性","第66回応用物理学会春季学術講演会",,"応用物理学会",,,"p. 11-192",2019,Mar. "鄭 源宰,大野 綜一郎,劉 龍,渡辺 正裕","CaF2/Siヘテロ構造を用いた近赤外波長量子カスケードレーザの理論解析","第66回応用物理学会春季学術講演会",,"応用物理学会",,,"p. 11-427",2019,Mar. "市川研佑,利根川啓希,廣瀬皓大,三上萌,福山聡史,熊谷佳郎,渡辺正裕","金属をエミッタとするシリコン／フッ化物多重障壁共鳴トンネルダイオードの理論解析","第66回応用物理学会春季学術講演会",,"応用物理学会",,,"p. 11-191",2019,Mar. "T. Saraya,K. Itou,T. Takakura,M. Fukui,S. Suzuki,K. Takeuchi,M. Tsukuda,Y. Numasawa,K. Satoh,T. Matsudai,W. Saito,K. Kakushima,T. Hoshii,K. Furukawa,M. Watanabe,N. Shigyo,K. Tsutsui,H. Iwai,A. Ogura,S. Nishizawa,I. Omura,H. Ohashi,T. Hiramoto","Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss","International Electron Devices Meeting (IEDM2018)",,,,,,2018,Dec. "千葉 明,安岡 康一,中川 茂樹,赤塚 洋,西方 敦博,萩原 誠,渡辺 正裕,竹内 希,全 俊豪,時岡 えい","eラーニングを活用した工学系専門科目の理解度向上 -東京工業大学電気電子系-",,"工学教育","公益社団法人 日本工学教育協会","Vol. 66","No. 5",,2018,Oct. "Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Masahiro Watanabe,Naoyuki Shigyo,Takuya Saraya,Toshihiko Takakura,Kazuo Itou,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Iriya Muneta,Hitoshi Wakabayashi,Sinichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately","44th European Solid-State Circuits Conference (ESSDERC2018)",,,,,,2018,Sept. "廣瀬皓大,福山聡史,熊谷佳郎,利根川啓希,渡辺正裕","Si/CaF2二重障壁共鳴トンネルダイオードの室温微分負性抵抗特性","第79回応用物理学会学術講演会",,,,,"p. 12-432",2018,Sept. "福山聡史,渡辺正裕","原子層薄膜CaF2/Siヘテロ構造を用いた単一障壁トンネルダイオードの電流電圧特性評価","第79回応用物理学会学術講演会",,,,,"p. 12-433",2018,Sept. "熊谷佳郎,大野綜一郎,廣瀬皓大,福山聡史,利根川啓希,渡辺正裕","ドライエッチングプロセスによるCaF2/Si/CaF2共鳴トンネル構造の室温微分負性抵抗特性","第79回応用物理学会学術講演会",,,,,"p. 12-434",2018,Sept. "Hiroki Tonegawa,Yoshiro Kumagai,Satoshi Fukuyama,Koudai Hirose,MASAHIRO WATANABE","Room Temperature High Peak-to-valley Current Ratio of CaF2/Si Triple-barrier Resonant-tunneling Diode Grown on Si","The 2018 International Conference on Solid State Devices and Materials",,,,,,2018,Sept. "K. Kakushima,T. Hoshii,M. Watanabe,N. Shigyo,K. Furukawa,T. Saraya,T. Takakura,K. Itou,M. Fukui,S. Suzuki,K. Takeuchi,I. Muneta,H. Wakabayashi,Y. Numasawa,A. Ogura,S. Nishizawa,K. Tsutsui,T. Hiramoto,H. Ohashi,H. Iwai","New methodology for evaluating minority carrier lifetime for process assessment","Symp. On VLSI Technology (VLSI2018)",,,,,,2018,June "利根川啓希,渡辺正裕","Si/CaF2三重障壁共鳴トンネルダイオードの室温微分負性抵抗特性","第65回応用物理学会春季学術講演会",,,,,"p. 12-195",2018,Mar. "福山聡史,渡辺正裕","原子層薄膜CaF2/Siヘテロ界面の価電子帯バンド不連続評価","第65回応用物理学会春季学術講演会",,,,,"p. 12-265",2018,Mar. "大野綜一郎,劉 龍,齋藤侑祐,近藤弘規,渡辺正裕","Si/CaF2量子井戸サブバンド間遷移レーザの近赤外波長活性層設計","第65回応用物理学会春季学術講演会",,,,,"p. 12-430",2018,Mar. "齋藤侑祐,近藤弘規,渡辺正裕","CaF2/Si量子カスケード構造からの室温電流注入発光","第65回応用物理学会春季学術講演会",,,,,"p. 12-431",2018,Mar. "熊?佳郎,渡辺正裕","CF4/O2混合ガスプラズマを?いたCaF2単結晶およびCaF2/Siヘテロ構造の反応性イオンエッチング","第78回応用物理学会学術講演会",,,,,"p. 12-436",2017,Sept. "近藤弘規,齋藤侑祐,渡辺正裕","Si/CaF2量?カスケードレーザの導波路構造作製と評価","第78回応用物理学会学術講演会",,,,,,2017,Sept. "齋藤侑祐,田辺直之,近藤弘規,渡辺正裕","薄膜物性値補正を考慮した Si/CaF2量子カスケードレーザの活性層設計","第 64 回応用物理学会春季学術講演会","第 64 回応用物理学会春季学術講演会 講演予稿集",,,,"Page 12-379",2017,Mar. "近藤弘規,齋藤侑祐,田辺直之,渡辺正裕","Si/CaF2量子カスケードレーザの導波路構造設計","第 64 回応用物理学会春季学術講演会","第 64 回応用物理学会春季学術講演会 講演予稿集",,,,"Page 03-134",2017,Mar. "櫻井文裕,渡辺正裕","CoSi2上に形成したSi/CaF2共鳴トンネル量子井戸構造の室温抵抗スイッチング特性","第77回応用物理学会学術講演会",,,,,,2016,Sept. "田辺直之,島中智史,須田慶太,渡辺正裕","CaF2/Si/CaF2共鳴トンネルダイオードの室温微分負性抵抗特性","電子情報通信学会（電子デバイス研究会）","信学技報, vol.116, No. 158, ED2016-34",,,,"pp. 35-39",2016,July "Yuya Kuwata,Keita Suda,Masahiro Watanabe","Resistance switching memory characteristics of CaF2/Si/CaF2 resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers",,"Appl. Phys. Express",,"Vol. 9",,"pp. 074001-1~4",2016,June "田辺 直之,望月 雅人,須田 慶太,島中 智史,渡辺 正裕","CaF2/Si/CaF2共鳴トンネル構造の室温微分性抵抗特性","第62回応用物理学会春季学術講演会",,,,,"pp. 11-116",2016,Mar. "望月雅人,須田慶太,渡辺正裕","CaF2/Si量子井戸へテロ構造からのEL発光特性","第76回応用物理学会学術講演会",,,,," 12-045",2015,Sept. "桑田友哉,須田慶太,渡辺正裕","Si/CaF2共鳴トンネル構造を用いた抵抗スイッチング素子のパルス応答特性","第62回応用物理学会春季学術講演会",,,,," 12-300",2015,Mar. "須田慶太,桑田友哉,渡辺正裕","CaF2/CdF2 /CaF2共鳴トンネル量子井戸構造を用いた抵抗スイッチング特性の理論解析","第62回応用物理学会春季学術講演会",,,,," 12-269",2015,Mar. "Keita Suda,Yuya Kuwata,Masahiro Watanabe","Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF2/CdF2/Si multilayered heterostructures grown on Si",,"Jpn. J. Appl. Phys.",,"Vol. 54","No. 4S"," 04DJ05-1",2015,Mar. "望月雅人,金子大志,須田慶太,渡辺正裕","Si/CaF2/CdF2サブバンド間遷移レーザ構造におけるCdF2高速引き抜き層の導入とEL増大効果","第75回応用物理学会学術講演会",,,,," 14-068",2014,Sept. "須田慶太,桑田友哉,渡辺正裕","Si/CaF2/CdF2 RTD構造における電流電圧特性の理論解析","第75回応用物理学会学術講演会",,,,," 14-067",2014,Sept. "渡辺正裕","ナノデバイスの機能設計と超高真空技術?新原理不揮発メモリ素子の探索的研究を例として?",,"真空ジャーナル",,,"No. 148","pp. 10-15",2014,Apr. "越田悠太,須田慶太,桑田友哉,傳田純也,渡辺正裕","Si/CaF2共鳴トンネル量子井戸構造の高ピーク電流密度抵抗スイッチング特性","第61回応用物理学会春季学術講演会",,," 18p-PG2-3",," 14-070",2014,Mar. "Junya Denda,Kazuya Uryu,Keita Suda,Masahiro Watanabe","Resistance switching memory characteristics of Si/CaF2/CdF2/CaF2/Si resonant-tunneling quantum-well structures",,"Appl. Phys. Express",," 7",," 044103-1-044103-4",2014,Mar. "桑田友哉,須田慶太,傳田純也,越田悠太,渡辺正裕","Si/CaF2共鳴トンネル構造を用いた抵抗スイッチング素子のパルス応答特性","第61回応用物理学会春季学術講演会",,," 18p-PG2-1",," 14-068",2014,Mar. "須田慶太,傳田純也,桑田友哉,越田悠太,渡辺正裕","Al/CaF2/Si MIS 構造のトンネル電流評価","第61回応用物理学会春季学術講演会",,," 18p-PG2-2",," 14-069",2014,Mar. "渡辺正裕","「金属／絶縁体ヘテロ接合電子デバイス」",,"応用物理",,"Vol. 63","No. 2","pp. 124-131",2014,Feb. "J. Denda,K. Suda,Y. Kuwata,M. Watanabe","Pulsed operation of resistance switching memory of Si/CaF2/CdF2 resonant-tunneling quantum-well structures","The 2013 International Conference on Solid State Devices and Materials",,," A-8-4",," 588-589",2013,Sept. "小池進,渡辺正裕","CaF2/Si 量子ドット超格子を用いたp-i-n セル構造の光電変換特性","第74回応用物理学会学術講演会",,," 19p-A2-13",," 16-024",2013,Sept. "越田悠太,須田慶太,桑田友哉,傳田純也,小池進,瀬川美奈人,渡辺正裕","ナノクリスタルシリコン/CaF2 共鳴トンネルダイオードの微分負性抵抗特性","第74回応用物理学会学術講演会",,," 19p-P9-2",," 14-066",2013,Sept. "傳田純也,須田慶太,桑田友哉,渡辺正裕","Si/CaF2/CdF2 共鳴トンネル量子井戸構造のパルス応答特性","第74回応用物理学会学術講演会",,," 19p-P9-3",," 14-067",2013,Sept. "須田慶太,傳田純也,桑田友哉,渡辺正裕","Si/CaF2/CdF2 量子井戸構造を用いた抵抗スイッチング素子の理論解析","第74回応用物理学会学術講演会",,," 19p-P9-4",," 14-068",2013,Sept. "M. Segawa,T. Ohci,Y. Koshita,K. Suda,M. Watanabe","Near Infrared (λ?1.5μm) Room Temperature Electroluminescence from Si/CaF2 Intersubband Transition Laser Structures Grown on Silicon-on-Insulator Substrate","18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures, Matsue, Japan, July, 22-26, 2013",,," Th3-5",," 52",2013,July "Junya Denda,Kazuya Uryu,Masahiro Watanabe","Resistance Switching Memory Characteristics of Si/CaF2/CdF2 Quantum-Well Structures Grown on Metal (CoSi2) Layer",,"Jpn. J. Appl. Phys.",,"Vol. 52","No. 4","pp. 04CJ07-1-04CJ07-4",2013,Apr. "桑田友哉,瓜生和也,傳田純也,須田慶太,渡辺正裕","Si/CaF2共鳴トンネル構造を用いた抵抗スイッチング素子の作製","第60回応用物理学会春季学術講演会",,," 29a-PB6-7",," 14-046",2013,Mar. "瀬川美奈人,越智達也,越田悠太,渡辺正裕","Si/CaF2サブバンド間遷移レーザ構造からの室温近赤外(λ?1.5μm)EL発光","第60回応用物理学会春季学術講演会",,," 28p-G5-15",," 14-164",2013,Mar. "傳田純也,瓜生和也,須田慶太,渡辺正裕","Si/CaF2/CdF2共鳴トンネル量子井戸構造の抵抗スイッチング特性","第60回応用物理学会春季学術講演会",,," 29a-PB6-9",," 14-048",2013,Mar. "渡辺正裕","CoSi2上CaF2/CdF2/Si量子井戸構造を用いたクロスポイント型抵抗スイッチング素子の保持特性評価","第60回応用物理学会春季学術講演会",,," 29a-PB6-8",," 14-047",2013,Mar. "倉地祐輝,渡辺正裕","CaF2/Si 量子ドット構造におけるημτ積の分光感度特性","第73回応用物理学会学術講演会",,," 12a-F7-6",," 16-006",2012,Sept. "越智達也,渡辺正裕","Si/CaF2 量子カスケードレーザ構造からの室温近赤外EL発光","第73回応用物理学会学術講演会",,," 12p-PA1-12",," 14-083",2012,Sept. "J. Denda,K. Uryu,M. Watanabe","Resistance switching memory characteristics of Si/CaF2/CdF2 quantum-well structures grown on metal (CoSi2) Layer","The 2012 International Conference on Solid State Devices and Materials",,," PS-9-6",," 310-311",2012,Sept. "傳田純也,瓜生和也,渡辺正裕","金属CoSi2上に形成したSi/CaF2/CdF2共鳴トンネル量子井戸構造の抵抗スイッチング特性","第73回応用物理学会学術講演会",,," 12p-PA1-13",," 14-084",2012,Sept. "瓜生和也,傳田純也,渡辺正裕","CoSi2上CaF2/CdF2/Siヘテロ接合量子井戸構造を用いたクロスポイント型抵抗スイッチング素子の作製","第59回応用物理学会関係連合講演会",,," 18a-E1-7",," 14-101",2012,Mar. "Masahiro Watanabe,Kazuya Uryu","Retention characteristics of resistance switching memory using Si/CaF2/CdF2 quantum-well structures","The 2011 International Conference on Solid State Devices and Materials",,," P-9-14",," 350-351",2011,Sept. "瓜生和也,渡辺 正裕","CaF2/CdF2/Si ヘテロ接合量子井戸構造を用いた抵抗スイッチング素子の保持特性評価","第72回応用物理学会学術講演会",,," 31p-P16-14",," 14-045",2011,Aug. "渡辺正裕","CaF2/Si 量子ドット超格子を用いたp-i-n セル構造の作製","第72回応用物理学会学術講演会",,," 31a-ZH-5",," 16-005",2011,Aug. "仲正路友康,瓜生和也,渡辺正裕","CoSi2 上弗化物共鳴トンネル構造を用いた抵抗スイッチング素子の作製と特性評価","第58回応用物理学会関係連合講演会",,," 26a-KV-6",," 14-070",2011,Mar. "M. Watanabe,H. Oogi","Fabrication of p-i-n structure using epitaxial silicon/CaF2 quantum-dot superlattice","3rd International Symposium on Innovative Solar Cells",,," PA-2",," 126",2010,Oct. "Masahiro Watanabe,Yuhkou Nakashouji,Kazuya Tsuchiya","Switching voltage reduction of resistance switching memory using Si/CaF2/CdF2 quantum-well structures","The 2010 International Conference on Solid State Devices and Materials",,," F-5-2",," 792-793",2010,Sept. "仲正路友康,土屋和哉,渡辺正裕","シリコン／弗化物共鳴トンネル構造を用いた抵抗スイッチング素子の低電圧化","第71回応用物理学会学術講演会",,," 16a-NC-1",," 14-064",2010,Sept. "大木洋,渡辺正裕","エピタキシャルCaF2/Si量子ドット構造の光電流測定","第57回応用物理学会関係連合講演会",,," 20a-TG-10",," 16-096",2010,Mar. "渡辺正裕","電子情報工学ニューコース16 プログラミング概論",,"電子情報工学ニューコース １６ プログラミング概論","株式会社 培風館",,,,2010,Jan. "M. Watanabe,R. Hirasawa,Y. Nakashouji","Resistance switching memory using Si/CaF2/CdF2 quantum-well structures","The 2009 International Conference on Solid State Devices and Materials",,," K-2-6",," 284-285",2009,Oct. "平澤亮,仲正路友康,渡辺正裕","シリコン／弗化物共鳴トンネル構造を用いた抵抗スイッチング素子の特性評価","第56回応用物理学会関係連合講演会",,," 30a-ZB-5"," 3"," 1425",2009,Mar. "M. Watanabe,H. Oogi","Enhancement of Multiexciton Generation using Epitaxial Silicon/Fluoride Quantum-dot Structures","International Symposium on Innovative Solar Cells 2009",,," T-2",," 172",2009,Mar. "MASAHIRO WATANABE","Enhancement of Multiexciton Generation using Epitaxial","International Symposium on Innovative Solar Cells 2009",,,,,"pp. 172",2009,Mar. "大木洋,渡辺正裕","エピタキシャルCaF2/Si量子ドット構造の光学特性評価","第56回応用物理学会関係連合講演会",,," 31p-TF-4"," 2"," 927",2009,Mar. "梶浦俊祐,芦川典士,渡辺正裕","Si/CaF2量子へテロ構造の近赤外EL発光","第56回応用物理学会関係連合講演会",,," 30p-ZB-2"," 3"," 1427",2009,Mar. "M. Watanabe,T. Wada","Fabrication and Characterization of CdF2/CaF2 Resonant Tunneling Floating Gate Metal-oxide-semiconductor Field Effect Transistor Structures","The 2008 International Conference on Solid State Devices and Materials",,," H-9-3",," 1090-1091",2008,Sept. "Shunsuke Kajiura,Masahiro Watanabe","Proposal and analysis of quantum cascade lasers using Si/CaF2/CdF2 hybrid quantum well structures","International Nano-Optoelectronics Workshop (iNOW 2008)",,," 3-P17",," 269-270",2008,Aug. "Ryo Hirasawa,Masahiro Watanabe","Novel Resistivity Random Access Memory (ReRAM) based on tunneling probability modulation using Si/CaF2/CdF2 quantum-well structures","International Nano-Optoelectronics Workshop (iNOW 2008)",,," 4-P22",," 339-340",2008,Aug. "和田宇史,鈴木雄介,平澤亮,渡辺正裕","CdF2/CaF2共鳴トンネルゲート構造を用いた3端子集積デバイスの作製と評価","第55回応用物理学会関係連合講演会",,," 30p-E-2"," 3"," 1461",2008,Mar. "M. Watanabe,T. Kanazawa,M. Asada","Transmission Electron Microscopy Analysis of CaF2/CdF2/CaF2 Resonant Tunneling Diode Structures grown on Si(100) Substrate","The 34th International Symposium on Compound Semiconductors (ISCS2007)",,,"Vol. TuD P8",,"pp. 222",2007,Oct. "藤久雄己,粂井正也,梶浦俊祐,佐々木雄祐,渡辺正裕,浅田雅洋","Si基板上CdF2/CaF2サブバンド間遷移レーザに向けたナノエリア微小孔によるリーク電流低減","第68回応用物理学会学術講演会",,," 5a-N-5"," 3"," 1404",2007,Sept. "H. Sano,K. Jinen,S. Kodaira,K. Uchida,M. Kumei,Y. Fujihisa,M. Watanabe,M. Asada","Mid-infrared (?4μm) Electroluminescence from CdF2/CaF2 Intersubband transition structures grown on Si(111) substrate","15th International Conference on Nonequilibrium carrier Dynamics in Semiconductors (HCIS15)",,,"Vol. MoP-31",,"pp. 47",2007,July "T. Kanazawa,A. Morosawa,R. Fuji,T. Wada,M. Watanabe,M. Asada","Suppression of Leakage Current of CdF2/CaF2 Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy",,"Jpn. J. Appl. Phys.",,"Vol. 46","No. 6A","pp. 3388-3390",2007,June "佐野洋,自念圭輔,内田薫,小平新志,粂井正也,藤久雄己,渡辺正裕,浅田雅洋","Si(111)基板上CdF2/CaF2量子へテロ構造からの中赤外(?4μm) EL発光","第54回応用物理学会関係連合講演会",,," 29p-T-19"," 3"," 1473",2007,Mar. "T. Kanazawa,M. Watanabe,M. Asada","Room temperature negative differential resistance of CdF2/CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates",,"Appl. Phys Lett.",,"Vol. 90","No. 9","pp. 092101-1-092101-3",2007,Feb. "自念圭輔,内田薫,小平新志,渡辺正裕,浅田雅洋","Si基板上弗化物系サブバンド間遷移レーザの理論解析","電子情報通信学会（電子デバイス研究会）",,,"Vol. 106","No. 520"," 23-28",2007,Jan. "K. Jinen,K. Uchida,S. Kodaira,M. Watanabe,M. Asada","Improvement of electroluminescence from CdF2/CaF2 Intersubband light-emitting structure by trench patterning and hydrogen annealing of Si substrate",,"IEICE Electronics Express",,"Vol. 3","No. 23","pp. 493-498",2006,Dec. "T. Kanazawa,R. Fujii,T. Wada,Y. Suzuki,M. Watanabe,M. Asada","Control of NDR Characteristics of CdF2/CaF2 RTDs Using Nano-Area Local Growth on Si(100) Substrates","2006 International Microprocesses and Nanotechnology Conference",,,"Vol. 27B-11-7",,"pp. 410-411",2006,Oct. "K. Jinen,T. Kikuchi,M. Watanabe,M. Asada","Near-infrared Electroluminescence from Multilayered CdF2/CaF2 Quantum Heterostructure Grown on Trench-Patterned Si(111) Substrate","3rd IEEE International Conference of GroupIV Photonics",,,"Vol. P29",,"pp. 128-130",2006,Sept. "内田薫,自念圭輔,小平新志,粂井正也,佐野洋,渡辺正裕,浅田雅洋","弗化物系サブバンド間遷移レーザのためのSOI構造プラズモン導波路の作製","第67回応用物理学会学術講演会",,," 30p-RE-16"," 3"," 1267",2006,Aug. "金澤 徹,藤井 諒,和田 宇史,鈴木 雄介,渡辺 正裕,浅田 雅洋","Si (100)基板上CdF2/CaF2ナノ領域成長共鳴トンネルダイオードのI-V特性制御","第67回応用物理学会学術講演会",,," 30p-RE-14"," 3"," 1266",2006,Aug. "自念圭輔,内田薫,小平新志,粂井正也,佐野洋,渡辺正裕,浅田雅洋","(CdF2/CaF2)量子構造におけるサブバンド間遷移時間の理論解析","第67回応用物理学会学術講演会",,," 30p-RE-17"," 3"," 1267",2006,Aug. "小平新志,自念圭輔,内田薫,粂井正也,佐野洋,渡辺正裕,浅田雅洋","Si基板上フッ化物系サブバンド間遷移レーザに向けた基板表面制御","第67回応用物理学会学術講演会",,," 30p-RE-15"," 3"," 1267",2006,Aug. "Keisuke Jinen,Takeshi Kikuchi,Masahiro Watanabe,MASAHIRO ASADA","Room-Temperature Electroluminescence from a Single-Period (CdF2/CaF2) Inter-subband Quantum Cascade Structure on Si Substrate",,"Jpn. J. Appl. Phys.",,"Vol. 45","No. 4B","pp. 3656-3658",2006,Apr. "Y. Niiyama,T. Murata,M. Watanabe","Optically pumped ultraviolet lasing of BeMgZnSe based quan-tum well laser structures",,"Phys. Stat. Solid. (c)",,"Vol. 3","No. 4","pp. 878-880",2006,Mar. "自念圭輔,菊池毅,小平新志,内田 薫,渡辺正裕,浅田雅洋","Si基板上(CdF2/CaF2)サブバンド間遷移レーザ構造のEL発光特性","電子情報通信学会（電子デバイス研究会）","信学技報, vol.105, no.550, ED2005-232，SDM2005-244",,"Vol. .105","No. 550","pp. 7-10",2006,Jan. "金澤 徹,諸澤篤史,藤井 諒,和田宇史,渡辺正裕,浅田雅洋","ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード","電子情報通信学会（電子デバイス研究会）",,,"Vol. 105","No. 550"," 11-14",2006,Jan. "Y. Niiyama,T. Murata,M. Watanabe","Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures",,"Appl. Phys Lett.",,"Vol. 87","No. 14","pp. 142106-1-142106-3",2005,Oct. "T. Kanazawa,A. Morosawa,M. Watanabe,M. Asada","High peak-to-valley current ratio of CdF2/CaF2 resonant tunneling diode grown on Si(100) substrates","2005 International conference on Solid State Devices and Materials",,,"Vol. G-1-7",,"pp. 162-163",2005,Sept. "金澤徹,諸澤篤志,藤井諒,和田宇史,渡辺正裕,浅田雅洋","Si(100)基板上CaF2/CdF2/CaF2量子井戸構造の成長温度依存性","第66回応用物理学会学術講演会",,," 9a-W-5"," 3"," 1214",2005,Sept. "自念圭輔,菊池毅,渡辺正裕,浅田雅洋","Si基板上(CdF2/CaF2)量子ヘテロ構造のEL発光特性","第66回応用物理学会学術講演会",,," 9a-W-6"," 3"," 1214",2005,Sept. "諸澤篤志,金澤徹,藤井諒,和田宇史,渡辺正裕,浅田雅洋","ナノ領域成長によるSi(100)基板上CdF2/CaF2共鳴トンネルダイオードの微分負性抵抗特性","第66回応用物理学会学術講演会",,," 9a-W-7"," 3"," 1215",2005,Sept. "菊池毅,自念圭輔,内田薫,小平新志,渡辺正裕,浅田雅洋","プラズモン導波路を用いた弗化物系サブバンド間遷移レーザの理論解析","第66回応用物理学会学術講演会",,," 9a-W-8"," 3"," 1215",2005,Sept. "K. Jinen,T. Kikuchi,M. Watanabe,M. Asada","Room temperature electroluminescence of CdF2/CaF2 intersubband transition laser structures grown on Si substrate","2005 International conference on Solid State Devices and Materials",,,"Vol. G-4-3",,"pp. 412-413",2005,Sept. "Y. Niiyama,T. Murata,M. Watanabe","Optically pumped ultraviolet lasing of BeMgZnSe based quantum well laser structures","12th International Conference on II-VI Compounds",,,"Vol. Tue-P-35",,"pp. 177",2005,Sept. "新山勇樹,村田奉之,渡辺正裕","BeMgZnSe系化合物を用いた光励起による紫外線レーザ発振(λ=373nm)","第52回応用物理学会関係連合講演会",,," 31p-ZN-7"," 1"," 338",2005,Mar. "T. Yokoyama,Y. Niiyama,T Murata,M. Watanabe","Improvement of Crystalline Quality of BeZnSe Using Buffer Layer by Migration Enhanced Epitaxy on GaP(001) Substrate",,"Jpn. J. Appl. Phys.",,"Vol. 44","No. 2","pp. L75-L77",2005,Feb. "渡辺正裕,田村信平,金澤徹,自念圭輔,浅田雅洋","ローカルエピタキシー法によるCoSi2/CaF2三重障壁共鳴トンネルダイオードの微分負性抵抗特性","電子情報通信学会（電子デバイス研究会）",,," ED2004-227"," SDM2004-222"," 7-10",2005,Jan. "Y. Niiyama,M. Watanabe","BeMgZnSe based ultraviolet lasers",,"Semicond. Sci. Tech.",,"Vol. 20",,"pp. 1187-1197",2005, "渡辺正裕,新山勇樹,村田奉之","分光エリプソメトリを用いたBeMgZnSeの屈折率測定","第65回応用物理学会学術講演会",,," 2a-ZQ-10"," 1"," 242",2004,Sept. "渡辺正裕,金澤徹,浅田雅弘","Si(100)基板上CdF2/CaF2共鳴トンネルダイオード構造の成長温度依存性","第65回応用物理学会学術講演会",,," 2a-ZK-4"," 3"," 1223",2004,Sept. "自念圭輔,村田博,渡辺正裕,浅田雅洋","Si基板上(CdF2/CaF2)量子へテロ構造の近赤外EL発光","第65回応用物理学会学術講演会",,," 4a-ZK-6"," 3"," 1242",2004,Sept. "村田奉之,新山勇樹,渡辺正裕","BeMgZnSeにおける室温最短波PL発光(λ=329nm)","第65回応用物理学会学術講演会",,," 2a-ZQ-9"," 1"," 242",2004,Sept. "MASAHIRO WATANABE","Migration enhanced epitaxy of BeZnSe grown on GaP substrate","第23回電子材料シンポジウム (EMS-23), H2",,,,," 203-206",2004,July "M. Watanabe,T. Kanazawa,K. Jinen,M. Asada","Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode Grown on Si(100) Substrate","2004 Silicon Nanoelectronics Workshop","2004 Silicon Nanoelectronics Workshop,9-20",,"Vol. 9-20",,"pp. 145-146",2004,June "田村信平,渡辺正裕,浅田雅洋","ナノ領域エピタキシー法によるCoSi2/CaF2三重障壁共鳴トンネルダイオードの室温微分負性抵抗特性","第51回応用物理学会関係連合講演会",,," 30a-ZE-8"," 3"," 1548",2004,Mar. "横山毅,新山勇樹,村田奉之,渡辺正裕","MEEバッファ層上にMBE成長したBeZnSe膜の発光特性の向上","第51回応用物理学会関係連合講演会",,," 29p-P12-13"," 1"," 327",2004,Mar. "Y. Niiyama,T. Yokoyama,M. Watanabe","Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate",,"Phys. Stat. Solid. (b)",,"Vol. 241",,"pp. 479-482",2004,Mar. "村田奉之,新山勇樹,横山毅,渡辺正裕","Be-Zn同時照射を用いたBeZnSe系ひずみ量子井戸構造の結晶成長と光学特性","第51回応用物理学会関係連合講演会",,," 29p-P12-11"," 1"," 327",2004,Mar. "新山勇樹,横山毅,村田奉之,渡辺正裕","BeMgZnSe系化合物を用いた光励起用導波路構造の設計と作製","第51回応用物理学会関係連合講演会",,," 29p-P12-12"," 1"," 327",2004,Mar. "自念圭輔,村田博,渡辺正裕,浅田雅洋","CoSi2-プラズモン導波路を用いた弗化物系サブバンド間遷移レーザの理論解析","第51回応用物理学会関係連合講演会",,," 30p-ZE-1"," 3"," 1549",2004,Mar. "渡辺正裕,金澤徹,自念圭輔,浅田雅洋","Si(100)基板上に形成されたCdF2/CaF2超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性","電子情報通信学会（電子デバイス研究会）",,," ED2003-231"," SDM2003-217"," 25-28",2004,Feb. "Y. Niiyama,T. Yokoyama,M. Watanabe","Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate","11th International Conference on II-VI compounds",,," We-1.3",,,2003,Sept. "新山勇樹,横山毅,村田奉之,丸山武男,渡辺正裕","BeMgZnSe 系紫外線量子井戸レーザの理論解析 ? クラッド層Mg 含有量依存性 ?","第64回応用物理学会学術講演会",,," 30p-B-13"," 1"," 251",2003,Aug. "新山勇樹,横山毅,村田奉之,渡辺正裕","BeMgZnSe 混晶のPL 発光エネルギーの温度依存性","第64回応用物理学会学術講演会",,," 30p-B-12"," 1"," 251",2003,Aug. "金澤 徹,松田 克己,渡辺 正裕,浅田 雅洋","Si (100)基板上CdF2/CaF2 共鳴トンネルダイオードの微分負性抵抗特性の構造依存性","第64回応用物理学会学術講演会",,," 30p-ZF-14"," 3"," 1253",2003,Aug. "Y. Niiyama,T. Yokoyama,M. Watanabe","Epitaxial growth and optical properties of BeMgZnSe for ultraviolet laser diodes","第22回電子材料シンポジウム G9",,,,," 231-234",2003,July "M. Watanabe,M. Matsuda,H. Fujioka,T. Kanazawa,M. Asada","Memory Effect of CdF2/CaF2 Resonant Tunneling Diode grown on p-type Silicon Substrate","The 11th International Conference on Modulated Semiconductor Structures -MSS11-",,," PC47",,"pp. 454-455",2003,July "M. Watanabe,M. Matsuda,H. Fujioka,T. Kanazawa,M. Asada","Structure Dependence of Negative Differential Resistance Characteristics of CdF2/CaF2 Resonant Tunneling Diode grown by Local Epitaxy on Silicon","2003 Silicon Nanoelectronics Workshop","2003 Silicon Nanoelectronics Workshop, 8-07",,"Vol. 8-07",,"pp. 106-107",2003,June "Y. Niiyama,T. Yokoyama,M. Watanabe","Effect of Buffer Layer for Epitaxial Growth of High Magnesium Content BeMgZnSe Lattice Matched to GaP (001) Substrate",,"Jpn. J. Appl. Phys.",,"Vol. 42","No. 6A","pp. L599-L602",2003,June "Y. Niiyama,T. Yokoyama,M. Watanabe","Crystal Growth of High-Mg-Content BeMgZnSe Lattice Matched to GaP(001) Substrate Using BeZnSe Buffer Layer","First Asia-Pacific Workshop on Widegap Semiconductors","First Asia-Pacific Workshop on Widegap Semiconductors, P118",,"Vol. P118",,"pp. 302-303",2003,Mar. "松田克己,金澤徹,渡辺正裕,浅田雅洋","CdF2/CaF2 共鳴トンネルダイオードの電荷蓄積による特性変化","第50回応用物理学会関係連合講演会",,," 29a-ZE-5"," 3"," 1469",2003,Mar. "金澤徹,松田克己,渡辺正裕,浅田雅洋","ダブルステップ化Si(100) 2°off基板上CdF2/CaF2 共鳴トンネルダイオードの作製と評価","第50回応用物理学会関係連合講演会",,," 29a-ZE-3"," 3"," 1469",2003,Mar. "自念圭輔,渡辺正裕,浅田雅洋","SOI 基板上弗化物系超ヘテロ構造を用いたサブバンド間遷移レーザの解析","第50回応用物理学会関係連合講演会",,," 28p-ZE-4"," 3"," 1462",2003,Mar. "渡辺正裕,松田克己,藤岡裕智,金澤徹,浅田雅洋","ローカルエピタキシー法により形成されたシリコン基板上CdF2/CaF2共鳴トンネルダイオードの微分負性抵抗特性の構造依存性","電子情報通信学会（電子デバイス研究会）",,," ED2002-287"," SDM2002-250"," 33-38",2003,Feb. "松田克己,金澤徹,渡辺正裕,浅田雅洋","CdF2/CaF2共鳴トンネルダイオード微分負性抵抗特性の量子井戸厚依存性","第63回応用物理学会学術講演会",,," 25p-P9-11"," 3"," 1203",2002,Sept. "M. Watanabe,T. Ishikawa,M. Matsuda,T. Kanazawa,M. Asada","Systematic variation of negative differential resistance characteristics of CdF2/CaF2 Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy","The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02)","The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02), Tu4-3",,"Vol. Tu4-3",,"pp. 103-106",2002,Sept. "新山勇樹,丸山武男,渡辺正裕","GaP(001)基板上BeMgZnSe-BeZnSe DH構造における紫外線PL発光","第63回応用物理学会学術講演会",,," 26p-YE-7"," 1"," 272",2002,Sept. "T. Maruyama,N. Nakamura,M. Watanabe","Crystal Growth of BeZnSe on CaF2/Si(111) Subtrate",,"Jpn. J. Appl. Phys.",,"Vol. 41","No. 8A","pp. L876-L877",2002,Aug. "Y. Niiyama,T. Maruyama,N. Nakamura,M. Watanabe","Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)",,"Jpn. J. Appl. Phys.",,"Vol. 41","No. 7A","pp. L751-L753",2002,July "M. Watanabe,T. Ishikawa,M. Matsuda,T. Kanazawa,M. Asada","Room Temperature Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode grown on Si using Nanoarea Local Epitaxy","26th International Conference on the Physics of Semiconductors","26th International Conference on the Physics of Semiconductors, P157",,"Vol. P157",,"pp. 219",2002,July "Masahiro Watanabe,Tatsuya Ishikawa,Masaki Matsuda,THORU KANAZAWA,MASAHIRO ASADA","Room Temperature Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy","44th 2002 Electronic Materials Conference","44th 2002 Electronic Materials Conference, Z5",,"Vol. Z5",,"pp. 54-55",2002,June "藤岡裕智,筒井将史,石川達也,渡辺正裕,浅田雅洋","縦型MOSFETとRTDによる微細素子の作成","第49回応用物理学会関係連合講演会",,," 30a-H-8"," 2"," 893",2002,Mar. "金澤徹,松田克己,石川達也,金澤徹,渡辺正裕,浅田雅洋","Si(100)基板上CdF2/CaF2共鳴トンネルダイオードの作製と評価","第49回応用物理学会関係連合講演会",,," 27p-YH-3"," 3"," 1374",2002,Mar. "渡辺正裕,石川達也,松田克己,金澤徹,浅田雅洋","ナノ領域成長によるSi(111)及びSi(100)基板上CdF2/CaF2共鳴トンネルダイオード","電子情報通信学会（電子デバイス研究会）",,," ED2001-242"," SDM2001-245"," 65-70",2002,Jan. "中村尚人,丸山武男,新山勇樹,渡辺正裕","GaP(001)基板上へのBeMgZnSeエピタキシャル成長","第62回応用物理学会学術講演会",,," 11a-P1-3"," 1"," 207",2001,Sept. "丸山武男,中村尚人,新山勇樹,渡辺正裕","GaP(001)基板上に成長したBeZnSeからの室温紫外線PL発光","第62回応用物理学会学術講演会",,," 11a-P1-2"," 1"," 207",2001,Sept. "Masahiro Watanabe,MASAHIRO ASADA","CaF2/CdF2 Resonant Tunneling Devices with High Peak-to-Valley Ratio on Silicon Substrate (Invited)","Frontier Science Research Conference, Science and Technology of Silicon Materials","Frontier Science Research Conference, Science and Technology of Silicon Materials, S-II, La Jolla/CA, U.S.A.",,"Vol. S-II",,,2001,Aug. "Masahiro Watanabe,Naoto Sakamaki,Tatsuya Ishikawa","Fine-Area Epitaxy of CdF2/CaF2 Resonant Tunneling Diode on Si","the First International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '01 (QNN '01)","the First International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '01 (QNN '01), TuP-29, Tsukuba, Japan",,"Vol. TuP-29",,"pp. 185-186",2001,July "Takeo Maruyama,Naoto Nakamura,Masahiro Watanabe","Epitaxial growth of BeZnSe on CaF2/Si(111) substrate","43rd 2001 Electronic Materials Conference","43rd 2001 Electronic Materials Conference, Y3, Notre Dame, U.S.A.",,"Vol. Y3",,"pp. 55",2001,June "Masahiro Watanabe,Naoto Sakamaki,Tatsuya Ishikawa,Daisuke Okamoto","Selective growth of CdF2/CaF2 resonant tunneling diode nanostructure on Si","43rd 2001 Electronic Materials Conference","43rd 2001 Electronic Materials Conference, Y4, Notre Dame, U.S.A.",,"Vol. Y4",,"pp. 55-56",2001,June "Masahiro Watanabe,Naoto Sakamaki,Tatsuya Ishikawa","Room Temperature Negative Differential Resistance with High Peak-to-Valley Crrent Ratio of CdF2/CaF2 Resonant Tunneling Diode on Silicon","Thirteenth International Conference on Indiumu Phosphide and Related Materials (IPRM'01)","Thirteenth International Conference on Indiumu Phosphide and Related Materials (IPRM'01), WP-30, Nara, Japan",,"Vol. WP-30",,"pp. 244-247",2001,May "岡野俊一,鈴木充典,渡辺正裕","CaF2/Si(111)基板上ZnO薄膜のN.Gaコドーピング法による不純物制御","第48回応用物理学会関係連合講演会",,," 31a-YL-3"," 3"," 1438",2001,Mar. "丸山武男,中村尚人,渡辺正裕","CaF2/Si(111)基板上へのBeZnSeエピタキシャル成長","第48回応用物理学会関係連合講演会",,," 28p-K-13"," 1"," 319",2001,Mar. "鈴木充典,岡野俊一,渡辺正裕","CaF2/Si基板上ZnO薄膜の酸素雰囲気中アニール","第48回応用物理学会関係連合講演会",,," 31a-YL-2"," 3"," 1438",2001,Mar. "石川 達也,酒巻 直人,岡本 大輔,渡辺 正裕","ナノ領域選択成長によるCdF2/CaF2 共鳴トンネルダイオードの作製と評価","第48回応用物理学会関係連合講演会",,," 29a-YD-2"," 3"," 1338",2001,Mar. "Masahiro Watanabe,Naoto Sakamaki,Tatsuya Ishikawa","Feasibility study of CdF2/CaF2 intersubband transition lasers","The 4th Pacific Rim Conference on Lasers and Electro-Optics","The 4th Pacific Rim Conference on Lasers and Electro-Optics, WC1-5, Chiba Japan.",,"Vol. II","No. WC1-5","pp. 40",2001, "M. Watanabe,Y. Iketani,M. Asada","Epitaxial Growth and Electrical Characteristics of CaF2/Si/CaF2 Resonant Tunneling Diode Structures Grown on Si(111) 1°-off Substrate",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 10A","pp. L964-L967",2000,Oct. "酒巻直人,渡辺正裕","CdF2/CaF2共鳴トンネルダイオードの室温微分負性抵抗特性","第61回応用物理学会学術講演会",,," 6a-ZR-9"," 3"," 1166",2000,Sept. "丸山武男,中村尚人,渡辺正裕","CaF2/Si(111)基板上へのBeSe成長","第61回応用物理学会学術講演会",,," 4p-Z-8"," 1"," 236",2000,Sept. "鈴木充典,岡野俊一,渡辺正裕","Si(111)上ZnO/CaF2ヘテロエピタキシャル構造からのPL紫外線発光","第61回応用物理学会学術講演会",,," 3p-ZK-1"," 3"," 1195",2000,Sept. "M. Watanabe,T. Funayama,T. Teraji,N. Sakamaki","CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 7B","pp. L716-L719",2000,July "M. Watanabe,Y. Iketani,M. Asada","Characteristics of Epitaxial Si/CaF2 Resonant Tunneling Diodes Grown on Si(111) 1° off Substrate","2000 IEEE Silicon Nanoelectronics Workshop",,," 5-6",," 63-64",2000,June "M. Watanabe,T. Funayama,T. Teraji,N. Sakamaki","Resonant Tunneling Characteristics of CdF2/CaF2 Heterostructures Grown on Silicon","2000 IEEE Silicon Nanoelectronics Workshop",,," 5-4",," 57-58",2000,June "M. Watanabe,T. Funayama,T. Teraji,N. Sakamaki","Room Temperature Negative Differential Resistance of CdF2-CaF2 Resonant Tunneling Diode on Si(111)","2000 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices",,," 4.2",," 73-77",2000,June "M. Watanabe,T. Funayama,T. Teraji,N. Sakamaki","Negative Differential Resistance with Peak to Valley Ratio Greater Than 100,000 of Double Barrier CdF2/CaF2 Resonant Tunneling Diode on Si(111)","42nd Electronic Materials Conference",,," K7",," 23",2000,June "M. Watanabe,Y. Maeda,S. Okano","Epitaxial Growth and Ultraviolet Photoluminescence of CaF2/ZnO/CaF2 Heterostructures on Si(111)",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 6A","pp. L500-L502",2000,June "T. Maruyama,N. Nakamura,M. Watanabe","Improvement of the Visible Electroluminescence from Nanocrystalline Silicon Embedded in CaF2 on Si(111) Substrate Prepared by Rapid Thermal Annealling",,"Jpn. J. Appl. Phys.",,"Vol. 39","No. 4B","pp. 1996-2000",2000,Apr. "舟山敏之,寺地耐志,渡辺正裕","CdF2/CaF2共鳴トンネルダイオードの室温微分負性抵抗特性","第47回応用物理学会関係連合講演会",,," 30a-YD-7"," 3"," 1340",2000,Mar. "池谷吉史,渡辺正裕,浅田雅洋","Si(111)1°off基板上Si/CaF2二重障壁共鳴トンネルダイオードの作製と評価","第47回応用物理学会関係連合講演会",,," 30a-YD-8"," 3"," 1340",2000,Mar. "渡辺正裕,筒井将史,浅田雅洋","Si-CaF2及びCdF2-CaF2ヘテロ接合を用いたシリコン基板上共鳴トンネルダイオード","電子情報通信学会（電子デバイス研究会）",,," ED99-316"," SDM99-209"," 73-78",2000,Feb. "中村尚人,丸山武男,渡辺正裕","CaF2/Si(111)薄膜中Si微結晶からのEL発光","第60回応用物理学会学術講演会",,," 3p-ZN-15"," 2"," 768",1999,Sept. "池谷吉史,渡辺正裕,浅田雅洋","テラス幅を制御したSi(111)1゜off 基板上へのCaF2イオンビームエピタキシャル成長","第60回応用物理学会学術講演会",,," 1p-T-4"," 1"," 342",1999,Sept. "筒井将史,渡辺正裕,浅田雅洋","Si/CaF2ヘテロ構造共鳴トンネルダイオードの作製と評価","第60回応用物理学会学術講演会",,," 2p-ZL-9"," 2"," 756",1999,Sept. "T. Maruyama,N. Nakamura,M. Watanabe","Visible Electroluninescence from Silicon Nanocrystals Embeded in CaF2 Epilayers on Si(111) with Rapid Thermal Anneal","The 1999 International Conference on Solid State Devices and Materials",,," D-11-1",," 426-427",1999,Sept. "T. Maruyama,N. Nakamura,M. Watanabe","Visible electroluminescence from Nanocrystalline Silicon Embedded in Single-Crystalline CaF2/Si(111) with Rapid Thermal Anneal",,"Jpn. J. Appl. Phys.",,"Vol. 38","No. 8B","pp. L904-L906",1999,Aug. "M. Tsutsui,M. Watanabe,M. Asada","Resonant tunneling diodes in Si/CaF2 heterostructures grown by molecular beam epitaxy",,"Jpn. J. Appl. Phys.",,"Vol. 38","No. 8B","pp. L920-L922",1999,Aug. "M. Watanabe,Y. Maeda,S. Okano","Epitaxial growth and UV luminescence of CaF2/ZnO/CaF2 heterostructures on Si(111)","41st Electronic Materials Conference",,," T5",," 51",1999,June "岡野俊一,前田泰久,渡辺正裕","Si(111)基板上CaF2/ZnO/CaF2ヘテロエピタキシャル構造からのEL紫外線発光","第46回応用物理学会関係連合講演会",,," 28a-ZA-9"," 3"," 1401",1999,Mar. "M. Watanabe,Y. Aoki,W. Saitoh,M. Tsuganezawa","Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy",,"Jpn. J. Appl. Phys.",,"Vol. 38","No. 2A","pp. L116-L118",1999,Feb. "M. Watanabe,T. Maruyama,S. Ikeda","Light emission from Si nanocrystals embedded in CaF2 epilayers on Si(111): effect of rapid thermal annealing",,"J. Luminescence",,"Vol. 80","No. 253","pp. 253-256",1999, "M. Watanabe,Y. Maeda,A. Yamada","Epitaxial growth of nanocrystal ZnO on CaF2/Si(111)","1998 Materials Research Society Fall meeting",,," D4.8",," 84",1998,Oct. "Masahiro WATANABE,Mika TSUGANEZAWA,Tosihyuki FUNAYAMA,Daisuke KURUMA","Negative differential resistance of CdF2/CaF2 resonant tunneling diode on Si(111) grown by partially ionized beam epitaxy","5th International Symposium on Quantum Effect Electronics",,,," 10","p. 42-45",1998,Oct. "丸山武男,中村尚人,渡辺正裕","CaF2/Si(111)薄膜中に形成されたSi微結晶からのPL発光スペクトルのRTA雰囲気依存性","第59回応用物理学会学術講演会",,," 16a-ZE-8"," 2"," 795",1998,Sept. "M. Watanabe,W. Saitoh,Y. Aoki,J. Nishiyama","Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructures using partially ionized beam epitaxy",,"Solid-State Electron.",,"Vol. 42","No. 7-8","pp. 1627-1630",1998,July "M. Watanabe,Y. Aoki,W. Saitoh,M. Tsuganezawa","Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode on Si(111) Grown by Partially Ionized Beam Epitaxy","40th Electronic Materials Conference",,," G9",," 13",1998,June "M. Watanabe,T. Maruyama,S. Ikeda","Light Emission from Nanocrystal Si Embedded in CaF2 Epilayers on Si(111): Effect of Rapid Thermal Annealing","E-MRS 1998 Spring Meeting",,," B-II/P.10",," B-29",1998,June "M. Watanabe,T. Matsunuma,T. Matsunuma,T. Maruyama,Y. Maeda","Electroluminescence of nanocrystal Si embedded in singel-crystal CaF2/Si",,,,"Vol. 37","No. 5B","pp. L591-L593",1998,May "M. Watanabe,T. Matsunuma,T. Maruyama,Y. Maeda","Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF2/Si(111)",,"Jpn. J. Appl. Phys.",,"Vol. 37","No. 5B","pp. L591-L593",1998,May "長田勝玄,青木雄一,津金澤みか,渡辺正裕","Si/CaF2超格子によるサブバンド間遷移レーザレーザの解析","第45回応用物理学会関係連合講演会",,," 30p-R-4"," 3"," 1332",1998,Mar. "前田泰久,山田淳,渡辺正裕","CaF2/Si(111)基板上ZnOナノ構造からのEL発光スペクトル","第45回応用物理学会関係連合講演会",,," 29a-S-2"," 3"," 1301",1998,Mar. "丸山武男,池田総太郎,渡辺正裕","CaF2/Si(111)薄膜中に形成されたSi微結晶からのPL発光スペクトルの成長条件依存性","第45回応用物理学会関係連合講演会",,," 29a-p-8"," 2"," 838",1998,Mar. "青木雄一,津金澤みか,齋藤渉,渡辺正裕","CaF2/CdF2ヘテロ超格子による3重障壁共鳴トンネルダイオードの微分負性抵抗","第45回応用物理学会関係連合講演会",,," 28a-R-2"," 3"," 1274",1998,Mar. "青木雄一,齋藤渉,西山淳,渡辺正裕","イオンビーム法を用いたCaF2/CdF2ヘテロ超格子の低温エピタキシャル成長","第58回応用物理学会学術講演会",,," 5a-ZF-2"," 3"," 1328",1997,Oct. "渡辺正裕,池谷吉史,杉浦秀和,吉田和史","イオンビームアシストを用いた低オフ角Si(111) 基板上へのCaF2エピタキシャル成長","第58回応用物理学会学術講演会",,," 4p-V-16"," 1"," 394",1997,Oct. "Masahiro WATANABE,Yuichi AOKI","CaF2/CdF2 Quantum well intersubband transition lasers","4th International Symposium on Quantum Effect Electronics",,,," 10","p. 40",1997,Oct. "山田淳,前田泰久,渡辺正裕","CaF2/Si(111)基板上ZnOナノ構造形成とPL発光スペクトル","第58回応用物理学会学術講演会",,," 3a-ZH-9"," 3"," 1282",1997,Oct. "M. Watanabe,W. Saitoh,Y. Aoki,J. Nishiyama","Epitaxial growth of nanometer-thick CaF2/CdF2 heterostructure using partially ionized beam epitaxy","International Workshop on NANO-PHYSICS AND ELECTRONICS (NPE’97)",,," X09",," 156-157",1997,Sept. "MASAHIRO WATANABE,W. Saitoh,K. Mori,H. Sugiura,T. Maruyama,M. Asada","Reduction of Electrical Resistance of Nanometer-Thick CoSi2 Film on CaF2 by pseudomorphic growth of CaF2 on Si(111)",,"Jpn. J. Appl. Phys.",,"Vol. 36","No. 7A","pp. 4470-4471",1997,July "W. Saitoh,Y. Aoki,J. Nishiyama,M. Watanabe,M. Asada","Epitaxial growth of Si/CdF2/CaF2 heterostructures on Si substrate","39th Electronic Materials Conference",,," U9",," 48",1997,June "齋藤渉,筒井将史,青木雄一,山崎克之,西山淳,渡辺正裕,浅田雅洋","Si基板上Si/CdF2量子井戸構造を用いた電界効果型量子効果デバイス","電子情報通信学会（電子デバイス研究会）",,," ED97-6"," SDM97-6"," 35-42",1997,Apr. "齋藤渉,青木雄一,西山淳,渡辺正裕,浅田雅洋","Si基板上Si/CdF2/CaF2ヘテロ構造エピタキシャル成長","第44回応用物理学会関係連合講演会",,," 30a-A-3"," 1"," 294",1997,Mar. "M. Watanabe,T. Matsunuma,T. Maruyama,M. Asada","Electroluminescence from silicon nanoparticles embedded in CaF2 on Si(111)","Phantoms Strategic Domain Meetings (PHASDOM97)",,," D2.23c",,,1997,Mar. "青木雄一,西山淳,齋藤渉,渡辺正裕,浅田雅洋","CaF2/CdF2ヘテロ接合を用いた量子井戸サブバンド間遷移レーザの解析","第44回応用物理学会関係連合講演会",,," 28a-ZA-6"," 3"," 1202",1997,Mar. "賈学英,小島隆,早船嘉典,田村茂雄,渡辺正裕,荒井滋久","近接効果補正露光による量子細線構造のサイズ揺らぎの低減","第44回応用物理学会関係連合講演会",,," 29a-X-4"," 2"," 586",1997,Mar. "MASAHIRO WATANABE,H. Hongo,T. Hattori,Y. Miyamoto,K. Furuya,T. Matsunuma,M. Asada","Seventy nm Pitch Patternings on CaF2 by e-beam Exposure: An Inorganic Resist and a Contamination Resist",,"Jpn. J. Appl. Phys.",,"Vol. 35","No. 12A","pp. 6342-6343",1996,Dec. "M. Watanabe,F. Iizuka,M. Asada","Visible Light Emission from Nanocrystalline Silicon Embedded in CaF2 Layers on Si(111)",,"IEICE Trans.",,"Vol. E79-C","No. 11","pp. 1562-1567",1996,Nov. "Masahiro WATANABE,Takeshi MATSUNUMA,Takeo MARUYAMA,Masahiro ASADA","Visible light emission from nanocrystalline silicon embedded in CaF2 layers on Si(111)","3rd International Symposium on Quantum Effect Electronics",,,," 11","p. 48",1996,Nov. "M. Watanabe,T. Matsunuma,T. Maruyama,M. Asada","Visible Electroluminescence from Silicon Nanoparticles Embedded in CaF2 on Si(111)","Second International Symposium on Control of Semiconductor Interfaces",,," A3-6",,,1996,Oct. "MASAHIRO WATANABE,Y. Miyamoto, K,T. Maruyama,M. Asada","Detection of hot electron current with scanning hot electron microscopy",,"Appl. Phys. Lett",,"Vol. 69","No. 15","pp. 2196-2198",1996,Oct. "W. Saitoh,K. Yamazaki,M. Asada,M. Watanabe","Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon",,"Jpn. J. Appl. Phys.",,"Vol. 35","No. 9A","pp. L1104-L1106",1996,Sept. "松沼健司,丸山武男,渡辺正裕,浅田雅弘","CaF2ナノクリスタルシリコンからのEL発光スペクトル","第57回応用物理学会学術講演会",,," 8p-V15"," 2"," 679",1996,Sept. "齋藤渉,森郁,杉浦秀和,丸山武男,渡辺正裕,浅田雅洋","CaF2上極薄膜CoSi2電気抵抗のCaF2結晶依存性","第57回応用物理学会学術講演会",,," 8p-ZE17"," 1"," 200",1996,Sept. "M. Asada,M. Watanabe,W. Saitoh,K. Mori,Y. Kohno","Quantum-Effect Electron Devices Using Metal/Insulator Nanostructures (Invited)","the 1996 International Conference on Solid State Devices and Materials",,," Sympo. IV-1",," 169-171",1996,Aug. "F. Vazquez,D. Kobayashi,I. Kobayashi,K. Furuya,Y. Miyamoto,T. Maruyama,M. Watanabe,M. Asada","Experimental Evidence of Hot Electron Detection with Scanning Hot Electron Microscopy (SHEM)","the 1996 International Conference on Solid State Devices and Materials",,," Sympo. IV-7",," 187-189",1996,Aug. "浅田雅洋,渡辺正裕,末益崇,河野義史,齋藤渉,森郁","金属(CoSi2)/絶縁体(CaF2)/Siヘテロ接合量子効果デバイス","電子情報通信学会（電子デバイス研究会）",,," ED96-2",,,1996,Apr. "齋藤渉,山崎克之,浅田雅洋,渡辺正裕","金属／絶縁体ヘテロ構造を用いた電界制御型トンネルトランジスタの理論解析","第43回応用物理学会関係連合講演会",,," 26aW6"," 3"," 1196",1996,Mar. "松沼健司,丸山武男,渡辺正裕,浅田雅洋","CaF2ナノクリスタルシリコンからのEL発光の成長条件依存性","第43回応用物理学会関係連合講演会",,," 26aZF5"," 1"," 214",1996,Mar. "末益崇,齋藤渉,森郁,河野義史,渡辺正裕,浅田雅洋","CoSi2/CaF2量子干渉トランジスタの微分負性抵抗を用いたホットエレクトロン輸送効率導出","第43回応用物理学会関係連合講演会",,," 28p-W11"," 3"," 1266",1996,Mar. "服部哲也,本郷廣生,宮本恭幸,古屋一仁,松沼 健司,渡辺正裕,浅田雅洋","電子ビーム露光によるCaF2無機レジスト70nm周期パターニング","第43回応用物理学会関係連合講演会",,," 26a-SZW-27"," 2"," 565",1996,Mar. "T. Suemasu,W. Saitoh,Y. Kohno,K. Mori,M. Watanabe,M. Asada","Transfer efficiency of hot electrons in a metal(CoSi2)/ insulator(CaF2) quantum interference transistor",,"Surface science",,"Vol. 361/362",,"pp. 209-212",1996,