"Hideo Hosono,Hideya Kumomi","Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory",,,"Wiley"," (Edited)",,,2022, "Kenji M. Kojima,Masatoshi Hiraishi,Hirotaka Okabe,Akihiro Koda,Rryosuke Kadono,Keisuke Ide,Satoru Matsuishi,Hideya Kumomi,Toshio Kamiya,Hideo Hosono","Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon",,"Applied Physics Letters",," 115",," 122104-1-5",2019,Sept. "ˆδŽθ Œ[‰ξ,‘Ύ“c ‰λl,Šέ“c —z‰ξ,•Π£ ‹M‹`,•½Ό G“T,γ“c –Ξ“T,‰_Œ© “ϊo–η,Χ–μ G—Y,_’J —˜•v","[u‰‰§—γάŽσά‹L”Ou‰‰] ‘S”½ŽΛdXόŒυ“dŽq•ͺŒυ–@‚Ι‚ζ‚ιƒAƒ‚ƒ‹ƒtƒ@ƒXŽ_‰»•¨”Ό“±‘Μ‚Μ‰Ώ“dŽq‘Ρ’ΌγŒ‡ŠΧ‚̐[‚³•ϋŒό•ͺ•z","‘ζ65‰ρ‰ž—p•¨—Šw‰οt‹GŠwpu‰‰‰ο",,,,,,2018,Mar. "Keisuke Ide,* Kyohei Ishikawa,Haochun Tang,Takayoshi Katase,Hidenori Hiramatsu,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In]Ga]Zn]O: Ultralow Optimum Oxygen Supply and Bandgap Widening",,"physica status solidi (a)",,," 1700832"," 1-6",2018,Feb. "ˆδŽθ Œ[‰ξ,Šέ“c —z‰ξ,•Π£ ‹M‹`,•½Ό G“T,γ“c –Ξ“T,‰_Œ© “ϊo–η,Χ–μ G—Y,_’J —˜•v","ƒAƒ‚ƒ‹ƒtƒ@ƒXŽ_‰»•¨”Ό“±‘Μ‚Μ‰Ώ“dŽq‘Ρ’ΌγŒ‡ŠΧ‚Μ•ͺ—£","‘ζ78‰ρ ‰ž—p•¨—Šw‰οH‹GŠwpu‰‰‰ο",,,,,,2017,Sept. "Haochun Tang,Yosuke Kishida,Keisuke Ide,Yoshitake Toda,Hidenori Hiramatsu,Satoru Matsuishi,Shigenori Ueda,Naoki Ohashi,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Multiple Roles of Hydrogen Treatments in Amorphous In-Ga-Zn-O Films",,"ECS J. Sol. State Sci. Technol.",," 6",," 365-372",2017,May "Keisuke Ide,Mitsuho Kikuchi,Masato Ota,Masato Sasase,Hidenori Hiramatsu,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In?Ga?Zn?O thin-film transistors",,"Jpn. J. Appl. Phys.",,"Vol. 56",,"pp. 03BB03-1 - 5",2017,Jan. "K.Ide,M. Kikuchi,M. Sasase,H. Hiramatsu,H. Kumomi,H. Hosono,T. Kamiya","Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films",,"; Proc. Active-Matrix Flatpanel Displays and Devices (AMFPD2016) (2016 The 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices)",,"Vol. 7-2/298-301",," 7-2/298-301",2017, "Haochun Tang,Keisuke Ide,Hidenori Hiramatsu,Shigenori Ueda,Naoki Ohashi,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Effects of thermal annealing on elimination of deep defects in amorphous In?Ga?Zn?O thin-film transistors",,"Thin Solid Films",,"Vol. 614",," 73-78",2016, "Min Liao,Zewen Xiao,Fan-Yong Ran,Hideya Kumomi,Toshio Kamiya,Hideo Hosono","Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films",,"ECS J. Solid State Sci. Technol.",,"Vol. 4",,"pp. Q26-Q30",2015, "Haochun Tang,Kyohei Ishikawa,Keisuke Ide,Hidenori Hiramatsu,Shigenori Ueda,Naoki Ohashi,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films",,"J. Appl. Phys.",,"Vol. 118",,"pp. 205703-1-6",2015, "Hideya Kumomi,Toshio Kamiya,Hideo Hosono","Advances in Oxide Thin-Film Transistors in Recent Decade and Their Future",,"(in Japanse, Hakumaku Transistor Gijutsu no Subete)",,"Vol. 67",,"pp. 3-8",2015, "Jakub Grochowski,Yuichiro Hanyu,Katsumi Abe,Jakub Kaczmarski,Jan Dyczewski,Hidenori Hiramatsu,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure",,"J. Disp. Technol.",,"Vol. 11",,"pp. 523-527",2015, "Takatoshi Orui,Johannes Herms,Yuichiro Hanyu,Shigenori Ueda,Ken Watanabe,Isao Sakaguchi,Naoki Ohashi,Hidenori Hiramatsu,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Charge Compensation by Excess Oxygen in Amorphous In-Ga-Zn-O Films Deposited by Pulsed Laser Deposition",,"J. Disp. Technol.",,"Vol. 11",,"pp. 518-522",2015, "Takaya Miyase,Ken Watanabe,Isao Sakaguchi,Naoki Ohashi,Kay Domen,Kenji Nomura,Hidenori Hiramatsu,Hideya Kumomi,Hideo Hosono,Toshio Kamiya","Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering",,"ECS J. Solid State Sci. Technol.",,"Vol. 3",,"pp. Q3085-Q3090",2014, "Toshio Kamiya,Hideya Kumomi,Hideo Hosono","Multiple Origins of Near-VBM Defects and Passivation Effects in a-In-Ga-Zn-O; Digest of The 21st International Display Workshops 2014 (IDW'14)","IDW'14(Dec.3-5, Niigata, Japan), AMD2-1",,,,,,2014, "Y. Hanyu,K. Abe,K. Domen,K. Nomura,H. Hiramatsu,H. Kumomi,H. Hosono,T. Kamiya","Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs",,"J. Displ. Technol.",,,,"pp. 979-983",2014, "Katsumi Abe,Ayumu Sato,Kenji Takahashi,Hideya Kumomi,Toshio Kamiya,Hideo Hosono","Mobility- and temperature-dependent device model for amorphous In?Ga?Zn?O thin-film transistors",,"Thin Solid Films",,"Vol. 559",,"pp. 40-43",2013,