"‘O“c N‹M,‘εŒ©rˆκ˜Y,Œγ“‘ “N–η,‘εŒ© ’‰O","’‚‘f“Y‰ΑLaB?”––Œ‚ΜƒfƒoƒCƒX‰ž—p‚ΙŠΦ‚·‚ιŒŸ“’ (ƒVƒŠƒRƒ“ή—ΏEƒfƒoƒCƒX)",,"“dŽqξ•ρ’ʐMŠw‰ο‹ZpŒ€‹†•ρ = IEICE technical report : MŠw‹Z•ρ","ˆκ”ΚŽΠ’c–@l“dŽqξ•ρ’ʐMŠw‰ο","Vol. 113","No. 247","pp. 27-31",2013,Oct. "Han, H.S.,Han, D.H.,Shun-ichiro OHMI","Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering",,"Electronics Letters",,"Vol. 49","No. 7","pp. 493-495",2013,