"Shunsuke Kubota,Rei Kayanuma,Akira Nakajima,Shin-ichi Nishizawa,Shin-ichi Nishizawa,Hiromichi Ohashi,Hitoshi Wakabayashi,Kazuo Tsutsui","P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation","2015 Material Research Society (MRS) Fall Meeting",,,,,,2015,Nov.
"Yusuke Takei,Tomohiro Shimoda,Wataru Saito,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai","Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns","2015 Material Research Society (MRS) Fall Meeting",,,,,,2015,Nov.
"A. Nakajima,S. Kubota,R. Kayanuma,K. Tsutsui,K. Kakushima,H. Wakabayashi,H. Iwai,S. Nishizawa,H. Ohashi","An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform","2015 IEEE Compound Semiconductor IC Symposium (CSICS2015)",,,,,,2015,Oct.
"Akira Nakajima,Shin-Ichi Nishizawa,Hiromichi Ohashi,Rei Kayanuma,Kazuo Tsutsui,Shunsuke Kubota,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai","GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform","The 27th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2015)",,,,,,2015,May
"T. Ohashi,K. Suda,S. Ishihara,N. Sawamoto,S. Yamaguchi,K. Matsuura,K. Kakushima,N. Sugii,A. Nishiyama,Y. Kataoka,K. Natori,K. Tsutsui,H. Iwai,A. Ogura,H. Wakabayashi","Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs",,"Japan Journal of Applied Physics",,"Vol. 54","No. 4S",,2015,Mar.
""Yusuke Takei","Masayuki Kamiya","Kazuo Tsutsui","Wataru Saito","Kuniyuki Kakushima","Hitoshi Wakabayashi","Yoshinori Kataoka","Hiroshi Iwai"","Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers",,"Physica Status Solidi A",,"Vol. 212","No. 5","pp. 1104-1109",2015,Feb.