"Shinichi Takagi,Daehwan Ahn,Munetaka Noguchi,Takahiro Gotow,Kouichi Nishi,Minsoo Kim,Mitsuru Takenaka","Tunneling MOSFET technologies using III-V/Ge materials","International Electron Device Meeting (IEDM)",,,,,,2016,Dec.
"Takahiro Gotow,Manabu Mitsuhara,Takuya Hoshi,Hiroki Sugiyama,Mitsuru Takenaka,Shinichi Takagi","Improvement of GaAsSb MOS interface properties by using ultrathin InGaAs interfacial layers","47th IEEE Semiconductor Interface Specialists Conference (SISC)",,,,,,2016,Dec.
"Œã“¡�‚Š°,–žŒ´Šw,�¯‘ñ–ç,�™ŽR�OŽ÷,’|’†�[,�‚–Ø�Mˆê","‹É”–InGaAsŠE–Ê‘w‚ð—L‚·‚éGaAsSb MOSŠE–Ê“Á�«‚Ì•]‰¿","‘æ77‰ñ ‰ž—p•¨—�Šw‰ï�H‹GŠw�p�u‰‰‰ï",,,,,,2016,Sept.
"Takahiro Gotow,Manabu Mitsuhara,Takuya Hoshi,Hiroki Sugiyama,Mitsuru Takenaka,Shinichi Takagi","Effects of impurity and composition profile steepness on electrical characteristics of GaAsSb/InGaAs heterojunction TFETs","International Conference on Solid State Devices and Materials (SSDM)",,,,,,2016,Sept.
"Œã“¡�‚Š°,–žŒ´Šw,�¯‘ñ–ç,�™ŽR�OŽ÷,’|’†�[,�‚–Ø�Mˆê","GaAsSb/InGaAs �cŒ^ƒgƒ“ƒlƒ‹FET‚Ì“®�ìŽÀ�Ø","‘æ63‰ñ ‰ž—p•¨—�Šw‰ï�t‹GŠw�p�u‰‰‰ï",,,,,,2016,Mar.