"Kotaro Natori,Tatsuhiro Ogawa,Takuya Hoshii,Tomohiro Matsushia,Takayuki Muro,Toyohiko Kinoshita,Yoshitada Morikawa,Kuniyuki Kakushima,Fumihiko Matsui,Kouichi Hayashi,Hitoshi Wakabayashi,Kazuo Tsutsui","Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography","11th Int. Symp. on Atomic Level Characterization (ALC'17)",,,,,,2017,Dec.
"Suguru Tatsunokuchi,Iriya Muneta,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Kuniyuki Kakushima","Photovoltaic Properties of Lateral Si Nano Wall Solar Cells","2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Tecnology (IWDTF 2017)",,,,,,2017,Nov.
"Kazuo Tsutsui,Tomohiro Matsushita,Kotaro Natori,Takayuki Muro,Yoshitada Morikawa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography",,"Nano Letters",,"Vol. 17",,"pp. 7533-7538",2017,Nov.
"筒井一生,角嶋邦之,星井 拓也,中島 昭,西澤 伸一,若林整,宗田伊理也,佐藤 克己,末代 知子,齋藤 渉,更屋 拓哉,伊藤 一夫,福井 宗利,鈴木 慎一,小林 正治,高倉 俊彦,平本 俊郎,小椋 厚志,沼沢 陽一郎,大村 一郎,大橋 弘通,岩井洋","三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術)",,"電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan","電気学会","Vol. 2017","No. 74","pp. 1-6",2017,Nov.
"M. Toyama,T. Ohashi,K. Matsuura,J. Shimizu,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing","Advanced Metallization Conference 2017: 27th Asian Session",,,,,,2017,Oct.
"K. Tsutsui,K. Kakushima,T. Hoshii,A. Nakajima,S. Nishizawa,H. Wakabayashi,I. Muneta,K. Sato,T. Matsudai,W. Saito,T. Saraya,K. Itou,M. Fukui,S. Suzuki,M. Kobayashi,T. Takakura,T. Hiramoto,A. Ogura,Y. Numasawa,I. Omura,H. Ohashi,H. Iwai","3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat)","ASICON2017","Proceedings of International Conference on ASIC",,"Vol. 2017-October",,"pp. 1137-1140",2017,Oct.
"Takuya Hoshii,Rumi Takayama,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate","International Conference on Solid-State Devices and Materials (SSDM2017)",,,,,,2017,Sept.
"N. Hayakawa,I. Muneta,T. Ohashi,K. Matsuura,J. Shimizu,K. Kakushima,K. Tsutsui,H. Wakabayashi","Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure","International Conference on Solid State Devices and Materials",,,,,,2017,Sept.
"Yueh Chin Lin,Yu Xiang Huang,Gung Ning Huang,Chia Hsun Wu,Jing Neng Yao,Chung Ming Chu,Shane Chang,Chia Chieh Hsu,Jin Hwa Lee,Kuniyuki Kakushima,Kazuo Tsutsui,Hiroshi Iwai,Edward Yi Chang","Enhancement-Mode GaN MIS-HEMTs with LaHfOx Gate Insulator for Power Application",,"IEEE Electron Device Letters",,"Vol. 38","No. 8","pp. 1101-1104",2017,Aug.
"J. Shimizu,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,N. Ikarashi,H. Wakabayashi","Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET","IEEE Electron Device Technology and Manufacturing Conference (EDTM)","2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)",,,,"pp. 222-223",2017,June
""K. Kakushima","T. Seki","H. Wakabayashi","K. Tsutsui","H. Iwai"","Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates",,"Vacuum",,"Vol. 149",,"pp. 14-18",2017,June
"K. Kakushima,Yuta Ikeuchi,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,T. Kikuchi,S. Ishikawa","Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes","Int. Workshop on Junction Technology (IWJT2017)",,,,,,2017,June
"岡田 泰典,山口 晋平,大橋 匠,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas","International Workshop on Junction Technology",,,,,,2017,June
"K. Kakushima,T. Suzuki,T. Hoshii,I. Muneta,H. Wakabayashi,HIROSHI IWAI,Y. Aoki,H. Nohira Aoki,KAZUO TSUTSUI","Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes","Int. Workshop on Junction Technology (IWJT2017)",,,,,,2017,June
"S. Hirano,J. Shimizu,K. Matsuura,T. Ohashi,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films","2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)","2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)",,,,"pp. 234-235",2017,June
"Takumi Ohashi,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness",,"Applied Physics Express","IOP Publishing","Vol. 10",,,2017,Mar.
"篠原 健朗,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","nMOSFET応用に向けた窒化ハフニウムの硫化による二硫化ハフニウム膜の作製","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"龍口 傑,星井 拓也,宗田 伊理也,若林 整,筒井 一生,岩井 洋,角嶋 邦之","横型Siナノウォール太陽電池の発電特性に関する検討","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"早川直希,宗田伊理也,大橋匠,松浦賢太朗,清水淳一,角嶋邦之,筒井一生,若林整","トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"外山 真矢人,大橋 匠,松浦 賢太朗,清水 淳一,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
""Jun’ichi Shimizu","Takumi Ohashi","Kentaro Matsuura","Iriya Muneta","Kuniyuki Kakushima","Kazuo Tsutsui","Hitoshi Wakabayashi"","High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs",,"Japanese Journal of Applied Physics (JJAP)",,"Vol. 56","No. 4S",,2017,