"T. Ohashi,R. Takeda,H. Kusu,M. Inoue,H. Tsukagoshi,M. Saijo","Entrepreneurial Education for Graduate Students to Nurture New Energy Innovation","The 6th International Education Forum on Environment and Energy Science",,,,,,2017,Dec.
"M. Toyama,T. Ohashi,K. Matsuura,J. Shimizu,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing","Advanced Metallization Conference 2017: 27th Asian Session",,,,,,2017,Oct.
"N. Hayakawa,I. Muneta,T. Ohashi,K. Matsuura,J. Shimizu,K. Kakushima,K. Tsutsui,H. Wakabayashi","Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure","International Conference on Solid State Devices and Materials",,,,,,2017,Sept.
"S. Hirano,J. Shimizu,K. Matsuura,T. Ohashi,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films","2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)","2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)",,,,"pp. 234-235",2017,June
"J. Shimizu,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,N. Ikarashi,H. Wakabayashi","Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET","IEEE Electron Device Technology and Manufacturing Conference (EDTM)","2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM)",,,,"pp. 222-223",2017,June
"岡田 泰典,山口 晋平,大橋 匠,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas","International Workshop on Junction Technology",,,,,,2017,June
"Takumi Ohashi,Makiko Watanabe,Miki Saijo","An Interaction Analysis of User-Testing to Extract Salient User Experience with the Robotic Assistive Device Life-Walker","IEEE International Conference on Robotics and Automation 2017",,,,,,2017,May
"早川直希,宗田伊理也,大橋匠,松浦賢太朗,清水淳一,角嶋邦之,筒井一生,若林整","トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"Takumi Ohashi,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness",,"Applied Physics Express","IOP Publishing","Vol. 10",,,2017,Mar.
"外山 真矢人,大橋 匠,松浦 賢太朗,清水 淳一,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"S. Ishihara,Y. Hibino,N. Sawamoto,T. Ohashi,K. Matsuura,H. Machida,M. Ishikawa,H. Sudo,H. Wakabayashi,A. Ogura","Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor",,"MRS Advances",,"Vol. 2","No. 29",,2017,
"Y. Hibino,S. Ishihara,N. Sawamoto,T. Ohashi,K. Matsuura,H. Machida,M. Ishikawa,H. Sudo,H. Wakabayashi,A. Ogura","Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition",,"MRS Advances",,"Vol. 2","No. 29",,2017,
"Y. Hibino,S. Ishihara,N. Sawamoto,T. Ohashi,K. Matsuura,H. Machida,H. Wakabayashi,A. Ogura","Band gap-tuned MoS2(1-x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process",,"Journal of Materials Research",,"Vol. 32","No. 16",,2017,