"Kotaro Natori,Tatsuhiro Ogawa,Takuya Hoshii,Tomohiro Matsushia,Takayuki Muro,Toyohiko Kinoshita,Yoshitada Morikawa,Kuniyuki Kakushima,Fumihiko Matsui,Kouichi Hayashi,Hitoshi Wakabayashi,Kazuo Tsutsui","Atomic scale analyses of As doped in Si by soft X-ray photoelectron spectroscopy and spectro-photoelectron holography","11th Int. Symp. on Atomic Level Characterization (ALC'17)",,,,,,2017,Dec.
"Kazuo Tsutsui,Tomohiro Matsushita,Kotaro Natori,Takayuki Muro,Yoshitada Morikawa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography",,"Nano Letters",,"Vol. 17",,"pp. 7533-7538",2017,Nov.
"Suguru Tatsunokuchi,Iriya Muneta,Takuya Hoshii,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Kuniyuki Kakushima","Photovoltaic Properties of Lateral Si Nano Wall Solar Cells","2017 International Workshop on Dielectric Thin Films for Future Electron Devices: Science and Tecnology (IWDTF 2017)",,,,,,2017,Nov.
"筒井一生,角嶋邦之,星井 拓也,中島 昭,西澤 伸一,若林整,宗田伊理也,佐藤 克己,末代 知子,齋藤 渉,更屋 拓哉,伊藤 一夫,福井 宗利,鈴木 慎一,小林 正治,高倉 俊彦,平本 俊郎,小椋 厚志,沼沢 陽一郎,大村 一郎,大橋 弘通,岩井洋","三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証 (電子デバイス 半導体電力変換合同研究会 パワーデバイス・パワーエレクトロニクスとその実装技術)",,"電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan","電気学会","Vol. 2017","No. 74","pp. 1-6",2017,Nov.
"K. Tsutsui,K. Kakushima,T. Hoshii,A. Nakajima,S. Nishizawa,H. Wakabayashi,I. Muneta,K. Sato,T. Matsudai,W. Saito,T. Saraya,K. Itou,M. Fukui,S. Suzuki,M. Kobayashi,T. Takakura,T. Hiramoto,A. Ogura,Y. Numasawa,I. Omura,H. Ohashi,H. Iwai","3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low Vce(sat)","ASICON2017","Proceedings of International Conference on ASIC",,"Vol. 2017-October",,"pp. 1137-1140",2017,Oct.
"筒井 一生,角嶋 邦之,星井 拓也,中島 昭,西澤 伸一,若林 整,宗田 伊理也,佐藤 克己,末代 知子,齋藤 渉,更屋 拓哉,伊藤 一夫,福井 宗利,鈴木 慎一,小林 正治,高倉 俊彦,平本 俊郎,小椋 厚志,沼沢 陽一郎,大村 一郎,大橋 弘通,岩井 洋","三次元スケーリングによるIGBTのV[CEsat]低減の実験的検証",,"電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan","電気学会","Vol. 2017","No. 173","pp. 1-6",2017,Oct.
"Takuya Hoshii,Rumi Takayama,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Back-gate effect on p-channel GaN MOSFETs on Polarization-Junction Substrate","International Conference on Solid-State Devices and Materials (SSDM2017)",,,,,,2017,Sept.
"K. Kakushima,Yuta Ikeuchi,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,T. Kikuchi,S. Ishikawa","Low Temperature Ohmic Contact for p-type GaN using Mg Electrodes","Int. Workshop on Junction Technology (IWJT2017)",,,,,,2017,June
"K. Kakushima,T. Suzuki,T. Hoshii,I. Muneta,H. Wakabayashi,HIROSHI IWAI,Y. Aoki,H. Nohira Aoki,KAZUO TSUTSUI","Formation of Mo2C Electrodes using Stacked Sputtering Process for Thermally Stable SiC Schottky Barrier Diodes","Int. Workshop on Junction Technology (IWJT2017)",,,,,,2017,June
"高山 留美,星井 拓也,中島 昭,西澤 伸一,大橋 弘通,角嶋 邦之,若林 整,筒井 一生","分極接合基板上pチャネルGaN MOS構造の容量特性についての検討 (シリコン材料・デバイス)",,"電子情報通信学会技術研究報告 = IEICE technical report : 信学技報","電子情報通信学会","Vol. 117","No. 101","pp. 31-34",2017,May
"龍口 傑,星井 拓也,宗田 伊理也,若林 整,筒井 一生,岩井 洋,角嶋 邦之","横型Siナノウォール太陽電池の発電特性に関する検討","第64回応用物理学会春季学術講演会",,,,,,2017,Mar.
"Kakushima, K.,Ikeuchi, Y.,Hoshii, T.,Iriya Muneta,Wakabayashi, H.,Tsutsui, K.,Iwai, H.,Kikuchi, T.,Ishikawa, S.,Takuya Hoshii","Low temperature ohmic contact for p-type GaN using Mg electrodes",,"17th International Workshop on Junction Technology, IWJT 2017",,,,"pp. 85-86",2017,
"Tsutsui, K.,Matsushita, T.,Natori, K.,Muro, T.,Morikawa, Y.,Hoshii, T.,Kakushima, K.,Wakabayashi, H.,Hayashi, K.,Matsui, F.,Kinoshita, T.,Takuya Hoshii","Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography",,"Nano Letters",,"Vol. 17","No. 12","pp. 7533-7538",2017,
"Kakushima, K.,Suzuki, T.,Hoshii, T.,Iriya Muneta,Wakabayashi, H.,Tsutsui, K.,Iwai, H.,Nohira, H.,Takuya Hoshii","Formation of Mo<inf>2</inf>C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes",,"17th International Workshop on Junction Technology, IWJT 2017",,,,"pp. 81-82",2017,
"Kakushima, K.,Hoshii, T.,Tsutsui, K.,Nakajima, A.,Nishizawa, S.,Wakabayashi, H.,Muneta, I.,Sato, K.,Matsudai, T.,Saito, W.,Saraya, T.,Itou, K.,Fukui, M.,Suzuki, S.,Kobayashi, M.,Takakura, T.,Hiramoto, T.,Ogura, A.,Numasawa, Y.,Omura, I.,Ohashi, H.,Iwai, H.,Takuya Hoshii","Experimental verification of a 3D scaling principle for low V<inf>ce(sat)</inf>IGBT",,"Technical Digest - International Electron Devices Meeting, IEDM",,,,"pp. 10.6.1-10.6.4",2017,