"T. Saraya,K. Itou,T. Takakura,M. Fukui,S. Suzuki,K. Takeuchi,M. Tsukuda,Y. Numasawa,K. Satoh,T. Matsudai,W. Saito,K. Kakushima,T. Hoshii,K. Furukawa,M. Watanabe,N. Shigyo,K. Tsutsui,H. Iwai,A. Ogura,S. Nishizawa,I. Omura,H. Ohashi,T. Hiramoto","Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss","International Electron Devices Meeting (IEDM2018)",,,,,,2018,Dec.
"Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Magnetic property in sputtered MoS2 thin film on growth temperature","第23回 半導体におけるスピン工学の基礎と応用（PASPS-23)",,,,,,2018,Dec.
"Eisuke Anju,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout",,"Journal of the Electron Devices Society (J-EDS)",,"vol. 8",,"pp. 1244-1250",2018,Nov.
"K. Sasaki,J. Song,T. Hoshii,H. Wakabayashi,K. Tsutsui,I. Mizushima,T. Yoda,K. Kakushima","Minority Carrier Lifetime Measurement for SiC Epitaxial Layer","The 5th Meeting on Advanced Power Semiconductors",,,,,,2018,Nov.
"K. Matsuura,J. Shimizu,M. Toyama,T. Ohashi,I. Muneta,S. Ishihara,K. Kakushima,K. Tsutsui,A. Ogura,H. Wakabayashi","Sputter-Deposited-MoS2 nMISFETs with Top-Gate and Al2O3 Passivation under Low Thermal Budget for Large Area Integration",,"IEEE Journal of the Electron Devices Society","IEEE","Vol. 6",,"pp. 1251 - 1257",2018,Nov.
"Takuya Hoshii,Shuma Tsuruta,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform","International Workshop on Nitride Semiconductors (IWN2018)",,,,,,2018,Nov.
"Takuya Hamada,Hayato Mukai,Tokio Takahashi,Toshihide Ide,Mitsuaki Shimizu,Hiroki Kuroiwa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Kazuo Tsutsui","Electrical properties of selectively grown GaN channel for FinFETs","International Workshop on Nitride Semiconductors (IWN2018)",,,,,,2018,Nov.
"T. Sakamoto,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,Y. Suzuki,N. Ikarashi,H. Wakabayashi","Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy","IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)",,,,,,2018,Oct.
"J. Shimizu,T. Ohashi,K. Matsuura,I. Muneta,K. Kakushima,K. Tsutsui,N. Ikarashi,H. Wakabayashi,N. Ikarashi","Low-Temperature MoS2 Film Formation using Sputtering and H2S Annealing",,"Journal of the Electron Devices Society",,"Vol. 7","No. 1","p. 2",2018,Oct.
"Toyohiko Kinoshita,Tomohiro Matsushita,Takayuki Muro,Takuo Ohkochi,Hitoshi Osawa,Kouichi Hayashi,Fumihiko Matsui,Kazuo Tsutsui,Kotaro Natori,Yoshitada Morikawa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Aya Taked,Kensei Terashim,Wataru Hosoda,Tetsuji Fukura,Yuukou Yano,Hirohkazu Fujiwara,Masanori Sunagawa,Hiromitsu Kato,Tamio Oguchi,Takanori Wakita,Yuuji Muraoka,Takayoshi Yokoya","Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites","14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14)",,,,,,2018,Oct.
"M. Hamada,K. Matsuura,T. Sakamoto,H. Tanigawa,T. Ohashi,I. Muneta,T. Hoshii,K. Kakushima,K. Tsutsui,H. Wakabayashi","Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film","2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)",,,,,,2018,Oct.
"清水 孝,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","TMAHによる表面処理のp型GaN/金属コンタクト特性への影響","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"井上 毅哉,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"久恒 和也,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"神林 郁哉,星井 拓也,角嶋 邦之,若林 整,筒井 一生","Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"Kazuya Hisatsune,Yoshihisa Takaku,Kohei Sasa,Takuya Hoshii,Iriya Muneta,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors","Int. Conf. on Sold State Devices and Materials (SSDM2018)",,,,,,2018,Sept.
"Kazuo Tsutsui,Tomohiro Matsushita,Takayuki Muro,Yoshitada Morikawa,Kotaro Natori,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography","International Conference on Solid-State Devices and Materials (SSDM2018)",,,,,,2018,Sept.
"松浦 賢太朗,清水 淳一,外山 真矢人,大橋 匠,宗田 伊理也,石原 聖也,角嶋 邦之,筒井 一生,小椋 厚志,若林 整","大面積集積化に向けたスパッタMoS2薄膜を用いたTop-Gate nMISFETs","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"小川 達博,名取 鼓太郎,星井 拓也,仲武 昌史,渡辺 義夫,永山 勉,樋口 隆弘,加藤 慎一,谷村 英昭,角嶋 邦之,若林 整,筒井 一生","フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"谷川 晴紀,松浦 賢太朗,濱田 昌也,坂本 拓朗,宗田 伊理也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"向井 勇人,濱田 拓也,高橋 言緒,井出 利英,清水 三聡,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"五十嵐 智,松浦 賢太朗,濱田 昌也,谷川 晴紀,坂本 拓朗,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","保護膜を通したフォーミングガスアニールによるスパッタMoS2 膜の結晶性改善","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"佐々木 杏民,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響",,,,,,,2018,Sept.
"佐々 康平,久恒 和也,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","酸化セリウムを挿入したMIMキャパシタの充放電特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"岩塚 春樹,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","Siを導入したHfO2のMIMキャパシタの容量特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"久永 真之佑,渡部 拓巳,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"鶴田 脩真,星井 拓也,中島 昭,西澤 伸一,大橋 弘通,角嶋 邦之,若林 整,筒井 一生","AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Masahiro Watanabe,Naoyuki Shigyo,Takuya Saraya,Toshihiko Takakura,Kazuo Itou,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Iriya Muneta,Hitoshi Wakabayashi,Sinichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately","44th European Solid-State Circuits Conference (ESSDERC2018)",,,,,,2018,Sept.
"Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Growth temperature dependence of magnetic property of sputtered MoS2 thin film","The 79th JSAP Autumn meeting",,,,,,2018,Sept.
"I. Muneta,Danial B. Z.,N. Hayakawa,K. Kakushima,K. Tsutsui,H. Wakabayashi","Magnetic Force Microscopy Image Measured on MoS2 Thin Film Sputtered on CaF2 (111) Substrate","International School and Conference on Physics and Applications of Spin Phenomena in Solids (PASPS)",,,,,,2018,Aug.
"濱田拓也,向井勇人,高橋言緒,井手利英,清水三聡,星井拓也,角嶋邦之,若林整,岩井洋,筒井一生","FinFET応用に向けた選択成長GaNチャネルの電気特性","第82回半導体・集積回路シンポジウム",,,,,,2018,Aug.
"K. Kakushima,T. Hoshii,M. Watanabe,N. Shigyo,K. Furukawa,T. Saraya,T. Takakura,K. Itou,M. Fukui,S. Suzuki,K. Takeuchi,I. Muneta,H. Wakabayashi,Y. Numasawa,A. Ogura,S. Nishizawa,K. Tsutsui,T. Hiramoto,H. Ohashi,H. Iwai","New methodology for evaluating minority carrier lifetime for process assessment","Symp. On VLSI Technology (VLSI2018)",,,,,,2018,June
"M. Toyama,T. Ohashi,K. Matsuura,J. Shimizu,I. Muneta,K. Kakushima,K. Tsutsui,H. Wakabayashi","Ohmic Contact between Titanium and Sputtered MoS2 Films achieved by Forming-Gas Annealing",,"JPN J APPL PHYS",,"  57",,"  07MA04",2018,June
"Yiming Lei,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Masayuki Furuhashi,Shingo Tomohisa,Satoshi Yamakawa,Kuniyuki Kakushima","Effect of Lanthanum Silicate Interface Layer on the Electrical Characteristics of 4H-SiC Metal-Oxide-Semiconductor Capacitors",,"Microelectronics Reliability",,"vol. 84",,"pp. 248-252",2018,May
"D. Saito,I. Muneta,T. Hoshii,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","Reliability of SiC Schottky Diodes with Mo2C Electrode","ECS Meeting",,,,,,2018,May
"C. Y. Su,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3","ECS Meeting",,,,,,2018,May
"Yiming Lei,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Masayuki Furuhashi,Shingo Tomohisa,Satoshi Yamakaw,Kuniyuki Kakushima","Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing",,"Microelectronics Reliability",,"vol. 84",,"pp. 226-229",2018,May
"Akira Nakajima,Shunsuke Kubota,Kazuo Tsutsui,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Shin-ichi Nishizawa,Hiromichi Ohashi","GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform",,"IET Power Electronics",,"Vol. 11","No. 4","pp. 689-694",2018,Apr.
"H. Kataoka,H. Iwai,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","A Defect Density Profile Extraction Method for GaN Epi-Wafers","ECS Meeting",,,,,,2018,Apr.
"Zulkornain Bin Danial,宗田 伊理也,早川 直希,角嶋 邦之,筒井 一生,若林 整","Sputtered MoS2 Thin Film Formation on CaF2 (111) Substrate","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.
"N. Hayakawa,Iriya Muneta,Takumi Ohashi,Kenntarou Matsuura,Junnichi Shimizu,Kuniyuki KAKUSHIMA,KAZUO TSUTSUI,Hitoshi Wakabayashi","Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control",,"Japan Journal of Applied Physics","IOP Publishing","Vol. 57",,"  04FP13",2018,Mar.
"K. Matsuura,J. Shimizu,M. Toyama,T. Ohashi,I. Muneta,S. Ishihara,K. Kakushima,K. Tsutsui,A. Ogura,H. Wakabayashi","Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate","2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",,,,"pp. 104-106",2018,Mar.
"Eisuke Anju,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout","The 2nd Electron Devices Technology and Manufacturing Conference (EDTM2018)",,,,,,2018,Mar.
"Suguru Tatsunokuchi,I. Muneta,T. Hoshii,H. Wakabayashi,K. Tsutsui,HIROSHI IWAI,K. Kakushima","Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure","China Semiconductor Technology International Conference (CSTIC2018)",,,,,,2018,Mar.
"K. Matsuura,T. Ohashi,I. Muneta,S. Ishihara,K. Kakushima,K. Tsutsui,A. Ogura,H. Wakabayashi","Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization",,"Journal of Electrical Materials","Springer US","Vol. 47","No. 7","pp. 3497",2018,Mar.
"Chen-Yi Su,Takuya Hoshii,Iriya Muneta,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Kuniyuki Kakushima","Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3","65th JSAP Spring meeting",,,,,,2018,Mar.
"大橋 匠,坂本 拓朗,松浦 賢太朗,清水 淳一,外山 真矢人,石原 聖也,日比野 祐介,宗田 伊理也,角嶋 邦之,筒井 一生,小椋 厚志,若林 整","Migration制御したスパッタリング法による2次元層状MoS2成膜","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.
"坂本 拓朗,大橋 匠,松浦 賢太朗,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","スパッタの低パワー化によるMoS2薄膜のキャリヤ濃度低減",,,,,,,2018,Mar.
"安重 英祐,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和","第65回応用物理学会春季学術講演会",,,,,,2018,Mar.
"Kazuo Tsutsui,Tomohiro Matsushita,Takayuki Muro,Yoshitada Morikawa,Kotaro Natori,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique","Intnational Workshop on Junction Technology (IWJT2018)",,,,,,2018,Mar.