"T. Saraya,K. Itou,T. Takakura,M. Fukui,S. Suzuki,K. Takeuchi,M. Tsukuda,Y. Numasawa,K. Satoh,T. Matsudai,W. Saito,K. Kakushima,T. Hoshii,K. Furukawa,M. Watanabe,N. Shigyo,K. Tsutsui,H. Iwai,A. Ogura,S. Nishizawa,I. Omura,H. Ohashi,T. Hiramoto","Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss","International Electron Devices Meeting (IEDM2018)",,,,,,2018,Dec.
"Takuya Hoshii,Shuma Tsuruta,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Performance Prediction of Scaled p-channel GaN MOSFET on Polarization Junction Platform","International Workshop on Nitride Semiconductors (IWN2018)",,,,,,2018,Nov.
"Takuya Hamada,Hayato Mukai,Tokio Takahashi,Toshihide Ide,Mitsuaki Shimizu,Hiroki Kuroiwa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Kazuo Tsutsui","Electrical properties of selectively grown GaN channel for FinFETs","International Workshop on Nitride Semiconductors (IWN2018)",,,,,,2018,Nov.
"K. Sasaki,J. Song,T. Hoshii,H. Wakabayashi,K. Tsutsui,I. Mizushima,T. Yoda,K. Kakushima","Minority Carrier Lifetime Measurement for SiC Epitaxial Layer","The 5th Meeting on Advanced Power Semiconductors",,,,,,2018,Nov.
"M. Hamada,K. Matsuura,T. Sakamoto,H. Tanigawa,T. Ohashi,I. Muneta,T. Hoshii,K. Kakushima,K. Tsutsui,H. Wakabayashi","Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film","2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)",,,,,,2018,Oct.
"Toyohiko Kinoshita,Tomohiro Matsushita,Takayuki Muro,Takuo Ohkochi,Hitoshi Osawa,Kouichi Hayashi,Fumihiko Matsui,Kazuo Tsutsui,Kotaro Natori,Yoshitada Morikawa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Aya Taked,Kensei Terashim,Wataru Hosoda,Tetsuji Fukura,Yuukou Yano,Hirohkazu Fujiwara,Masanori Sunagawa,Hiromitsu Kato,Tamio Oguchi,Takanori Wakita,Yuuji Muraoka,Takayoshi Yokoya","Status of photoelectron holography at SPring-8:Experimental setup for time- and space-resolved technique and application to individual atomic imaging of multiple dopant sites","14th Int. Conf. on Electron Spectroscopy and Structure (ICEESS-14)",,,,,,2018,Oct.
"岩塚 春樹,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","Siを導入したHfO2のMIMキャパシタの容量特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"久永 真之佑,渡部 拓巳,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","凹凸AlGaN層導入によるAlGaN/GaN HEMT構造のコンタクト抵抗低減手法におけるドットアレイ状平面パターンのサイズ効果","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"鶴田 脩真,星井 拓也,中島 昭,西澤 伸一,大橋 弘通,角嶋 邦之,若林 整,筒井 一生","AlGaN/GaN 界面準位が分極接合基板上 p-MOSFET の電流特性に与える影響","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"清水 孝,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","TMAHによる表面処理のp型GaN/金属コンタクト特性への影響","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"井上 毅哉,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の基礎的検討","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"久恒 和也,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","CeOxを挿入したMIMキャパシタの静電容量の過渡応答特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"神林 郁哉,星井 拓也,角嶋 邦之,若林 整,筒井 一生","Si(111)基板上に成長したInAs極薄膜のラマン分光法による歪み評価","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"Kazuya Hisatsune,Yoshihisa Takaku,Kohei Sasa,Takuya Hoshii,Iriya Muneta,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Charge and Discharge Characteristics of On-chip CeOx Electric Double Layer Decoupling Capacitors","Int. Conf. on Sold State Devices and Materials (SSDM2018)",,,,,,2018,Sept.
"Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Masahiro Watanabe,Naoyuki Shigyo,Takuya Saraya,Toshihiko Takakura,Kazuo Itou,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Iriya Muneta,Hitoshi Wakabayashi,Sinichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately","44th European Solid-State Circuits Conference (ESSDERC2018)",,,,,,2018,Sept.
"Kazuo Tsutsui,Tomohiro Matsushita,Takayuki Muro,Yoshitada Morikawa,Kotaro Natori,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","Atomic Sites of Dopants in Si Visualized by Spectro-Photoelectron Holography","International Conference on Solid-State Devices and Materials (SSDM2018)",,,,,,2018,Sept.
"小川 達博,名取 鼓太郎,星井 拓也,仲武 昌史,渡辺 義夫,永山 勉,樋口 隆弘,加藤 慎一,谷村 英昭,角嶋 邦之,若林 整,筒井 一生","フラッシュランプアニールおよびポストアニールで活性/不活性化したSi中Asの軟X線光電子分光による評価","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"谷川 晴紀,松浦 賢太朗,濱田 昌也,坂本 拓朗,宗田 伊理也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","スパッタMoS2膜の HfO2膜越し硫化における表面残留硫黄除去","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"向井 勇人,濱田 拓也,高橋 言緒,井出 利英,清水 三聡,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"佐々木 杏民,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","n型SiCのエピタキシャル層の正孔ライフタイムがpnダイオード特性に与える影響",,,,,,,2018,Sept.
"佐々 康平,久恒 和也,星井 拓也,宗田 伊理也,若林 整,筒井 一生,角嶋 邦之","酸化セリウムを挿入したMIMキャパシタの充放電特性","第79回応用物理学会秋季学術講演会",,,,,,2018,Sept.
"濱田拓也,向井勇人,高橋言緒,井手利英,清水三聡,星井拓也,角嶋邦之,若林整,岩井洋,筒井一生","FinFET応用に向けた選択成長GaNチャネルの電気特性","第82回半導体・集積回路シンポジウム",,,,,,2018,Aug.
"K. Kakushima,T. Hoshii,M. Watanabe,N. Shigyo,K. Furukawa,T. Saraya,T. Takakura,K. Itou,M. Fukui,S. Suzuki,K. Takeuchi,I. Muneta,H. Wakabayashi,Y. Numasawa,A. Ogura,S. Nishizawa,K. Tsutsui,T. Hiramoto,H. Ohashi,H. Iwai","New methodology for evaluating minority carrier lifetime for process assessment","Symp. On VLSI Technology (VLSI2018)",,,,,,2018,June
"C. Y. Su,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","Interface State Density of Atomic Layer Deposited Al2O3 on Beta-Ga2O3","ECS Meeting",,,,,,2018,May
"D. Saito,I. Muneta,T. Hoshii,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","Reliability of SiC Schottky Diodes with Mo2C Electrode","ECS Meeting",,,,,,2018,May
"H. Kataoka,H. Iwai,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,H. Iwai,K. Kakushima","A Defect Density Profile Extraction Method for GaN Epi-Wafers","ECS Meeting",,,,,,2018,Apr.
"Suguru Tatsunokuchi,I. Muneta,T. Hoshii,H. Wakabayashi,K. Tsutsui,HIROSHI IWAI,K. Kakushima","Photovoltaic Properties of Lateral Ultra-Thin Si p-i-n structure","China Semiconductor Technology International Conference (CSTIC2018)",,,,,,2018,Mar.
"Chen-Yi Su,Takuya Hoshii,Iriya Muneta,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Kuniyuki Kakushima","Initial trap and hysteresis analysis of Atomic Layer Deposited Al2O3 on b-Ga2O3","65th JSAP Spring meeting",,,,,,2018,Mar.
"Kazuo Tsutsui,Tomohiro Matsushita,Takayuki Muro,Yoshitada Morikawa,Kotaro Natori,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","Analyses of 3D Atomic Arrangements of Impurity Atoms Doped in Silicon by Spectro-Photoelectron Holography Technique","Intnational Workshop on Junction Technology (IWJT2018)",,,,,,2018,Mar.
"Yamashita, D.,Watanabe, K.,Fujino, M.,Hoshii, T.,Okada, Y.,Nakano, Y.,Suga, T.,Sugiyama, M.,Takuya Hoshii","Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs",,"2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",,,,"pp. 1-3",2018,
"Kalainathan, S.,Ahsan, N.,Hoshii, T.,Okada, Y.,Logu, T.,Sethuraman, K.,Takuya Hoshii","Tailoring sub-bandgap of CuGaS<inf>2</inf> thin film via chromium doping by facile chemical spray pyrolysis technique",,"Journal of Materials Science: Materials in Electronics",,"Vol. 29","No. 22","pp. 19359-19367",2018,
"Tatsunokuchi, S.,Muneta, I.,Hoshii, T.,Wakabayashi, H.,Tsutsui, K.,Iwai, H.,Kakushima, K.,Takuya Hoshii","Photovoltaic properties of lateral ultra-thin Si p-i-n structure",,"China Semiconductor Technology International Conference 2018, CSTIC 2018",,,,"pp. 1-3",2018,
"Su, C.Y.,Hoshii, T.,Muneta, I.,Wakabayashi, H.,Tsutsui, K.,Iwai, H.,Kakushima, K.,Takuya Hoshii","Interface state density of atomic layer deposited AI2O3 on J3-Gai03",,"ECS Transactions",,"Vol. 85","No. 7","pp. 27-30",2018,
"Kaneko, T.,Muneta, I.,Hoshii, T.,Wakabayashi, H.,Tsutsui, K.,Iwai, H.,Kakushima, K.,Takuya Hoshii","Characterization of β-Ga<inf>2</inf>O<inf>3</inf> Schottky barrier diodes",,"2018 18th International Workshop on Junction Technology, IWJT 2018",,"Vol. 2018-January",,"pp. 1-3",2018,
"Tsutsui, K.,Matsushita, T.,Muro, T.,Morikawa, Y.,Natori, K.,Hoshii, T.,Kakushima, K.,Wakabayashi, H.,Hayashi, K.,Matsui, F.,Kinoshita, T.,Takuya Hoshii","Analyses of 3D atomic arrangements of impurity atoms doped in silicon by spectro-photoelectron holography technique",,"2018 18th International Workshop on Junction Technology, IWJT 2018",,"Vol. 2018-January",,"pp. 1-6",2018,
"Su, C.Y.,Hoshii, T.,Muneta, I.,Wakabayashi, H.,Tsutsui, K.,Iwai, H.,Kakushima, K.,Takuya Hoshii","Interface state density of atomic layer deposited AI2O3 on J3-Gai03",,"ECS Transactions",,"Vol. 85","No. 7","pp. 27-30",2018,