"Takuya Hamada,Hayato Mukai,Tokio Takahashi,Toshihide Ide,Mitsuaki Shimizu,Hiroki Kuroiwa,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Kazuo Tsutsui","Electrical properties of selectively grown GaN channel for FinFETs","International Workshop on Nitride Semiconductors (IWN2018)",,,,,,2018,Nov.
"Œüˆä —E�l,à_“c ‘ñ–ç,�‚‹´ Œ¾��,ˆä�o —˜‰p,�´�… ŽO‘�,�¯ˆä ‘ñ–ç,Šp“ˆ –M”V,Žá—Ñ �®,Šâˆä —m,“›ˆä ˆê�¶","—§‘̃`ƒƒƒlƒ‹ƒgƒ‰ƒ“ƒWƒXƒ^‰ž—p‚ÉŒü‚¯‚½‘I‘ð�¬’·GaN‚ٕ̈û�«ƒGƒbƒ`ƒ“ƒO","‘æ79‰ñ‰ž—p•¨—�Šw‰ï�H‹GŠw�p�u‰‰‰ï",,,,,,2018,Sept.
"à_“c‘ñ–ç,Œüˆä—E�l,�‚‹´Œ¾��,ˆäŽè—˜‰p,�´�…ŽO‘�,�¯ˆä‘ñ–ç,Šp“ˆ–M”V,Žá—Ñ�®,Šâˆä—m,“›ˆäˆê�¶","FinFET‰ž—p‚ÉŒü‚¯‚½‘I‘ð�¬’·GaNƒ`ƒƒƒlƒ‹‚Ì“d‹C“Á�«","‘æ82‰ñ”¼“±‘Ì�E�W�ωñ˜HƒVƒ“ƒ|ƒWƒEƒ€",,,,,,2018,Aug.