"Masaya Hamada,Kentaro Matsuura,Takuro Sakamoto,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film using UHV RF Magnetron Sputtering and Sulfurization",,"Journal of the Electron Devices Society (J-EDS)","IEEE","Vol. 7","No. 1","pp. 1258-1263",2019,Dec.
"K. Tsutsui,K. Natori,T. Ogawa,T. Muro,T. Matsuishita,Y. Morikawa,T. Hoshii,K. Kakushima,H. Wakabayashi,K. Hayashi,F. Matsui,T. Kinoshita","Analyses of 3D Atomic Arrangements of Dopants in Si Crystal Using Spectro-photoelectron Holography","Material Resarch Meeing 2019 (MRM2019)",,,,,,2019,Dec.
"Takuya Hamada,Shinpei Yamaguchi,Taiga Horiguchi,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Comparative and Systematic Study of Doping Technology for 2D -Sputtered SputteredSputtered MoS 2 Film","Material Resarch Meeing 2019 (MRM2019)",,,,,,2019,Dec.
"T. Kinoshita,T. Matsushita,T. Muro,T. Ohkochi,H. Osawa,K. Hayashi,F. Matsui,K.Tsutsui,K. Natori,Y. Morikawa,T. Hoshii,K. Kakushima,H. Wakabayashi,A. Takeda,K. Terashima,W. Hosoda,T. Fukura,Y. Yano,H. Fujiwara,M. Sunagawa,H. Kato,T. Oguchi,T. Wakita,Y. Muraoka,T. Yokoya","Status of Photoelectron Holography at SPring-8: Experimental Setup for Time- and Space-Resolved Technique and Application to Individual Atomic Imaging of Multiple Dopant Sites","T. Kinoshita, T. Matsushita, T. Muro, T. Ohkochi, H. Osawa, K. Hayashi, F. Matsui, K.Tsutsui, K. Natori, Y. Morikawa, T. Hoshii, K. Kakushima, H. Wakabayashi, A. Takeda, K. Terashima, W. Hosoda, T. Fukura, Y. Yano, H. Fujiwara, M. Sunagawa, H. Kato, T. Oguchi, T. Wakita, Y. Muraoka and T. Yokoya",,,,,,2019,Nov.
"Kuan Ning Huang,Yueh-Chin Lin,Jia Ching Lin,Chia Chieh Hsu,Jin Hwa Lee,Chia-Hsun Wu,Jing Neng Yao,Heng-Tung Hsu,Venkatesan Nagarajan,Kuniyuki Kakushima,Kazuo Tsutsui,Hiroshi Iwai,Edward Yi Chang,Chao Hsin Chien","Study of E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator for power applications",,"Journal of Electronic Materials",,"Vol. 49",,"pp. 1348?1353",2019,Nov.
"Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing",,"Applied Physics Letters",,"Vol. 115",,"p. 192404",2019,Nov.
"渡辺正裕,執行直之,星井拓也,古川和由,角嶋邦之,佐藤克己,末代知子,更屋拓哉,高倉俊彦,伊藤一夫,福井宗利,鈴木慎一,竹内 潔,宗田伊里也,若林 整,中島 昭,西澤伸一,筒井一生,平本俊郎,大橋弘通,岩井洋","トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション","電子情報通信学会 SDM(シリコン材料・デバイス)研究会","電子情報通信学会技術研究報告 = IEICE technical report : 信学技報","電子情報通信学会","Vol. 119","No. 273","pp. 45-48",2019,Nov.
"Kazuo Tsutsui,Tomohiro Matsushita,Takayuki Muro,Yoshitada Morikawa,Kotaro Natori,Takuya Hoshii,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kouichi Hayashi,Fumihiko Matsui,Toyohiko Kinoshita","3D Atomic Imaging of As Doped in Si by Spectro-Photoelectron Holography","8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8)",,,,,,2019,Nov.
"Takuya Hoshii,Hiromasa Okita,Taihei Matsuhashi,Indraneel Sanyal,Yu-Chih Chen,Ying-Hao Ju,Akira Nakajima,Kuniyuki Kakushima,Hitoshi Wakabayashi,Jen-Inn Chyi,Kazuo Tsutsui","Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE","The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)",,,,,,2019,Nov.
"Y. W. Lin,J. Song,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Pulse deposition of Y2O3 films by Y(iPrCp)3 assisted by Ar boost technology","Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019)",,,,,,2019,Nov.
"Jinhan Song,A. Ohta,T. Hoshii,H. Wakabayashi,K. Tsutsui,K. Kakushima","Electrical Characteristics of Atomic Layer Deposited Y-silicate Devices","Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019)",,,,,,2019,Nov.
"H. Tanigawa,K. Matsuura,I. Muneta,T. Hoshii,K. Kakushima,K. Tsutsui,H. Wakabayashi","Positive Threshold Voltage in Accumulation Capacitance of TiN-Top-Gate/High-k/Sputtered-MoS2 Stacks","Int. Workshop on Dielectric Thin Films for Future Electron Devices -Science and Technology- (IWDTF2019)",,,,,,2019,Nov.
"T. Hiramoto,T. Saraya,K. Itou,T. Takakura,M. Fukui,S. Suzuki,K. Takeuchi,M. Tsukuda,Y. Numasawa,K. Satoh,T. Matsudai,W. Saito,K. Kakushima,T. Hoshii,K. Furukawa,M. Watanabe,N. Shigyo,H. Wakabayashi,K. Tsutsui,H. Iwai,A. Ogura,S. Nishizawa,I. Omura,H. Ohash","Switching of 3300V Scaled IGBT by 5V Gate Drive","ASICON (International Conference on ASIC)",,,,,,2019,Oct.
"蔡 松霖,草深 一樹,星井 拓也,若林 整,筒井 一生,角嶋 邦之","スパッタリングを用いたAlScN膜の形成","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"神林 郁哉,星井 拓也,角嶋 邦之,若林 整,筒井 一生","Si(111)基板上GaNのためのMgF2バッファの検討","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"宮田 篤希,齋藤 大樹,星井 拓也,若林 整,筒井 一生,角嶋 邦之","4H-SiCエピタキシャル層によるX線検出に関する検討","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"西田 宗史,星井 拓也,片岡 寛明,筒井 一生,角嶋 邦之,若林 整","ステップ電圧印加時の過渡電流測定によるGaN中のトラップ密度評価","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"太田 惇丈,宋 ?漢,星井 拓也,若林 整,筒井 一生,角嶋 邦之","原子層堆積法を用いたイットリウムシリケート薄膜の形成","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"草深 一樹,Sunglin Tsai,星井 拓也,若林 整,筒井 一生,角嶋 邦之","スパッタリングによって形成したAlScN膜のリーク電流の評価","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"山岸 朋彦,堀 敦,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"宋 ジンハン,太田 惇丈,星井 拓也,若林 整,筒井 一生,角嶋 邦之","Y2O3/SiO2積層構造の絶縁膜を用いたMOS capacitorの特性評価","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"T. Saraya,K. Itou,T. Takakura,M. Fukui,S. Suzuki,K. Takeuchi,K. Kakushima,T. Hoshii,K. Tsutsui,H. Iwai,S. Nshizawa,I. Omura,T. Hiramoto","Impact of Structural Parameter Scaling on On-state Voltage in 1200V Scaled IGBTs","Int. Conf. on Solide State Devices and Materials (SSDM2019)",,,,,,2019,Sept.
"Takanori Shirokura,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing","The 80th JSAP Autumn meeting",,,,,,2019,Sept.
"濱田 拓也,堀口 大河,辰巳 哲也,冨谷 茂隆,濱田 昌也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","スパッタMoS2膜のCl2プラズマ処理によるシート抵抗低減","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"井上 毅哉,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","シリコン縦型パワーデバイスへのひずみ導入によるオン抵抗低減の研究","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"沖田 寛昌,星井 拓也,松橋 泰平,Sanyal Indraneel,Chen Yu-Chih,Ju Ying-Hao,中島 昭,西澤 伸一,大橋 弘通,角嶋 邦之,若林 整,Chyi Jen-Inn,筒井 一生","TEGを用いたAlGaN/GaNヘテロ成長の2DEG側界面電荷への影響","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"Joel Molina-Reyes,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing","Solid State Devices and Materials (SSDM2019)",,,,,,2019,Sept.
"堀口 大河,濱田 拓也,辰巳 哲也,冨谷 茂隆,星井 拓也,角嶋 邦之,筒井 一生,若林 整","スパッタMoS2膜のSF6プラズマ処理によるシート抵抗低減","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"濱田 昌也,松浦 賢太朗,宗田 伊理也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","スパッタ法と硫黄雰囲気アニールで成膜した高いホール効果移動度を持つ層状ZrS2膜","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"Tomohiko Yamagishi,Atsushi Hori,Iriya Muneta,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET","Int. Conf. on Solide State Devices and Materials (SSDM2019)",,,,,,2019,Sept.
"向井 勇人,?山 研,濱田 拓也,高橋 言緒,井手 利英,清水 三聡,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","選択成長法を用いたGaN FinFETの作製","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"高山 研,向井 勇人,濱田 拓也,高橋 言緒,井手 利英,清水 三総,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","GaN Fin構造選択成長における低抵抗領域の発生原因の検討","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"松橋 泰平,星井 拓也,沖田 寛昌,Indraneel Sanyal,Yu-Chih Chen,Ying-Hao Ju,中島 昭,角嶋 邦之,若林 整,Jen-Inn Chyi,筒井 一生","TEGを用いたGaN/AlGaNヘテロ成長の2DHG側界面電荷への影響","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"今井 慎也,濱田 昌也,五十嵐 智,宗田 伊理也,角嶋 邦之,筒井 一生,若林 整","硫化プロセスにおけるスパッタMoS2膜質向上の重要性","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"五十嵐 智,望月 祐輔,谷川 晴紀,濱田 昌也,松浦 賢太朗,角嶋 邦之,筒井 一生,若林 整","スパッタMoS2膜とTiSi2膜の界面におけるFGアニールによるコンタクト抵抗低減","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"谷川 晴紀,松浦 賢太朗,宗田 伊理也,星井 拓也,角嶋 邦之,筒井 一生,若林 整","正の閾値電圧のMetal-Top-Gate/High-k/スパッタMoS2の蓄積容量特性","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"木村 安希,久永 真之佑,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","部分的に薄層化したAlGaN 層によるAlGaN/GaN コンタクト抵抗低減効果の薄層領域パターン依存性","第80回応用物理学会秋季学術講演会",,,,,,2019,Sept.
"更屋 拓哉,伊藤 一夫,高倉 俊彦,福井 宗利,鈴木 慎一,竹内 潔,附田 正則,沼沢 陽一郎,佐藤 克己,末代 知子,齋藤 渉,角嶋邦之,星井 拓也,古川 和由,渡辺正裕,執行 直之,筒井一生,岩井洋,小椋 厚志,西澤 伸一,大村 一郎,大橋 弘通,平本 俊郎","5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減 (シリコン材料・デバイス)",,"電子情報通信学会技術研究報告 = IEICE technical report : 信学技報","電子情報通信学会","Vol. 118","No. 429","pp. 39-44",2019,Aug.
"Takuya Hoshii,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki Kakushima,Hitoshi Wakabayashi,Kazuo Tsutsui","Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces","13tu Int. Conf. on Nitride Semiconductor (ICNS)",,,,,,2019,July
"K. Matsuura,M. Hamada,T. Hamada,H. Tanigawa,T. Sakamoto,W. Cao,K. Parto,A. Hori,I. Muneta,T. Kawanago,K. Kakushima,K. Tsutsui,A. Ogura,K. Banerjee,H. Wakabayashi","Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration","Int. Workshop on Juction Technology (IWJT2019)",,,,,,2019,June
"Iriya Muneta,Naoki Hayakawa,Takanori Shirokura,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","Ferromagnetic tunnel devices with two-dimensional layered material MoS2","Collaborative Conference on Materials Research (CCMR) 2019",,,,,,2019,June
"星井 拓也,中島 昭,西澤 伸一,大橋 弘通,角嶋 邦之,若林 整,筒井 一生","分極接合基板におけるAlGaN/GaNヘテロ界面の欠陥電荷評価","日本結晶成長学会ナノエピ分科会 第11回ナノ構造・エピタキシャル成長講演会",,,,,,2019,June
"Joel Molina-Reyes,Haruki Iwatsuka,Takuya Hoshii,Shun-Ichiro Ohmi,Hiroshi Funakubo,Atsushi Hori,Ichiro Fujiwara,Hitoshi Wakabayashi,Kazuo Tsutsui,Kuniyuki Kakushima","NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing","VLSI 2019 (2019 Symposia on VLSI Technology and Circuits)",,,,,,2019,June
"Takuya Hoshii,Akira Nakajima,Shin-ichi Nishizawa,Hiromichi Ohashi,Kuniyuki KAKUSHIMA,Hitoshi Wakabayashi,KAZUO TSUTSUI","Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates",,"Japanese Journal of Applied Physics",,"Vol. 58","No. 6","pp. 061006",2019,June
"筒井一生,松下 智裕,名取 鼓太?,小川 達博,室 隆桂之,森川 良忠,星井 拓也,角嶋邦之,若林整,林 好一,松井 文彦,木下 豊彦","光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測",,"電子情報通信学会技術研究報告 = IEICE technical report : 信学技報","電子情報通信学会","Vol. 119","No. 96","pp. 23-27",2019,June
"Takuya Saraya,Kazuo Itou,Toshihiko Takakura,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Masanori Tsukuda,Yohichiroh Numasawa,Katsumi Satoh,Tomoko Matsudai,Wataru Saito,Kuniyuki Kakushima,Takuya Hoshii,Kazuyoshi Furukawa,Masahiro Watanabe,Naoyuki Shigyo,Hitoshi Wakabayashi,Kazuo Tsutsui,Hiroshi Iwai,Atsushi Ogura,Shin-Ichi Nishizawa,Ichiro Omura,Hiromichi Ohashi,Toshiro Hiramo","3300V Scaled IGBTs Driven by 5V Gate Voltag","31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019)",,,,,,2019,May
"K. Sasaki,J. Song,T. Hoshii,H. Wakabayashi,K. Tsutsui,I. Mizushima,T. Yoda,K. Kakushima","Minority Carrier Lifetime Extraction Methodology of SiC Epitaxial Layer","235th ECS Meeting",,,,,,2019,May
"K. Hisatsune,T. Hoshii,I. Muneta,H. Wakabayashi,K. Tsutsui,K. Kakushima","Thickness Effects on Charge and Discharge Characteristics of CeOx MIM Capacitors","235th ECS Meeting",,,,,,2019,May
"J. Molina,H. Iwatsuka,T. Hoshii,S. Ohmi,H. Funakubo,A. Hori,I. Fujiwara,H. Wakabayashi,K. Tsutsui,K. Kakushima","Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode","235th ECS Meeting",,,,,,2019,May
"M. Fukui,T. Saraya,K. Itou,T. Takakura,S. Suzuki,K. Takeuchi,K. Kakushima,T. Hoshii,K. Tsutsui,H. Iwai,S. Nishizawa,I. Omura,T. Hiramoto","Turn-Off Loss Improvement by IGBT Scaling","Int. Conf. on Solide State Devices and Materials (SSDM2019)",,,,,,2019,May
"Masahiro Watanabe,Naoyuki Shigyo,Takuya Hoshii,Kazuyoshi Furukawa,Kuniyuki Kakushima,Katsumi Satoh,Tomoko Matsudai,Takuya Saraya,Toshihiro Takakura,Kazuo Itou,Munetoshi Fukui,Shinichi Suzuki,Kiyoshi Takeuchi,Iriya Muneta,Hitoshi Wakabayashi,Akira Nakajima,Shin-ichi Nishizawa,Kazuo Tsutsui,Toshiro Hiramoto,Hiromichi Ohashi,Hiroshi Iwai","Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs","31th Int. Symp. On Power Semiconductor Devices and ICs (ISPSD2019)",,,,,,2019,May
"Takeya Inoue,Takuya Hoshii,Takuo Kikuchi,Hidehiko Yabuhara,Kazuyuki Ito,Kuniyuki Kakushima,Hitoshi Wakabayashi,Hiroshi Iwai,Junichi Tonotani,Kazuo Tsutsui","Fundamental study on reducing on-resistance by introducing strain  into silicon vertical power devices","3rd Electron Devices Technology and Manufactureing Conference (EDTM2019)",,,,,,2019,Mar.
"Masaya Hamada,Kentaro Matsuura,Takuro Sakamoto,Iriya Muneta,Takuya Hoshii,Kuniyuki Kakushima,Kazuo Tsutsui,Hitoshi Wakabayashi","High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing","3rd Electron Devices Technology and Manufactureing Conference (EDTM2019)",,,,,,2019,Mar.
"松浦 賢太朗,濱田 昌也,坂本 拓朗,谷川 晴紀,宗田 伊理也,石原 聖也,角嶋 邦之,筒井 一生,小椋 厚志,若林 整","F.G.アニールによるMoSi2/スパッタMoS2界面コンタクト抵抗低減","第66回応用物理学会春期学術講演会",,,,,,2019,Mar.
"筒井 一生,松下 智裕,名取 鼓太?,小川 達博,室 隆桂之,森川 良忠,星井 拓也,角嶋 邦之,若林 整,林 好一,松井 文彦,木下 豊彦","光電子ホログラフィーによる半導体中の不純物の3Ｄ原子イメージング","第66回応用物理学会春期学術講演会",,,,,,2019,Mar.
"濱田 拓也,向井 勇人,高橋 言緒,井手 利英,清水 三聡,星井 拓也,角嶋 邦之,若林 整,岩井 洋,筒井 一生","FinFET応用に向けた選択成長GaNチャネルの電気特性","第66回応用物理学会春期学術講演会",,,,,,2019,Mar.
"筒井 一生,松下 智裕,名取 鼓太?,室 隆桂之,森川 良忠,星井 拓也,角嶋 邦之,若林 整,林 好一,松井 文彦,木下 豊彦","光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング","第66回応用物理学会春期学術講演会",,,,,,2019,Mar.
"松浦賢太朗,清水淳一,外山真矢人,大橋匠,坂本拓朗,宗田伊理也,石原聖也,角嶋邦之,筒井一生,小椋厚志,若林整","大面積集積化に向けたスパッタ二次元半導体 MoS2 薄膜のTop-gate nMISFETs チャネル応用","応用物理学会シリコンテクノロジー分科会第216回研究集会",,,,,,2019,Feb.
"筒井一生,松下智裕,室隆桂之,森川良忠,名取鼓太郎,小川達博,星井拓也,角嶋邦之,若林整,林好一,松井文彦,木下豊彦","光電子ホログラフィー法によるシリコン中にドープされた不純物の三次元原子配列構造の解析","応用物理学会シリコンテクノロジー分科会第216回研究集会",,,,,,2019,Feb.